Samsung Electronics Co., Ltd.

Sang-ryol Yang

Jae-young Ahn

Jin-Gyun Kim

Ki-hyun Hwang

Sung-hae Lee

Ju-Wan Lim

Jung-ho Kim

Han-Mei Choi

Ji-Hoon Choi

Bong-jin Kuh

In-Seok Yeo

Young-sub You

Byung-Hong Chung

Seung-hyun Lim

Jae-Jin Shin

Yoo-Chul Kong

Jong-sung Lim

Hee-Seok Kim

Kyong-Hee Joo

Jin-tae Noh

Hong-Suk Kim

Soon-wook Jung

A semiconductor device includes a plurality of electrode structures perpendicularly extending on a substrate, and at least one support unit extending between the plurality of electrode structures. The support unit includes at least one support layer including a noncrystalline metal oxide contacting a part of the plurality of electrode structures. Related devices and fabrication methods are also discussed.

Integrated circuit devices including electrode support structures and methods of fabricating the same

Methods of forming vertical nonvolatile memory devices may include forming an electrically insulating layer, which includes a composite of a sacrificial layer sandwiched between first and second mold layers. An opening extends through the electrically insulating layer and exposes inner sidewalls of the first and second mold layers and the sacrificial layer. A sidewall of the opening may be lined with an electrically insulating protective layer and a first semiconductor layer may be formed on an inner sidewall of the electrically insulating protective layer within the opening. At least a portion of the sacrificial layer may then be selectively etched from between the first and second mold layers to thereby define a lateral recess therein, which exposes an outer sidewall of the electrically insulating protective layer.

Three dimensional semiconductor memory device and method of fabricating the same

A semiconductor device includes a capacitor having a bottom electrode, a dielectric layer formed on the bottom electrode, a top electrode formed on the dielectric layer, and a contact plug having a metal that is connected with the top electrode, wherein the top electrode includes a doped poly-SiGelayer and a doped polysilicon layer epitaxially deposited on the doped poly-SiGelayer and the contact plug makes a contact with the doped polysilicon layer.

Semiconductor device including capacitor and method of fabricating same

In an embodiment, a method of manufacturing a charge-trapping dielectric and a silicon-oxide-nitride-oxide-silicon (SONOS)-type non-volatile semiconductor device includes forming the charge-trapping dielectric, and a first oxide layer including silicon oxide. A silicon nitride layer including silicon-rich nitride is formed by a cyclic chemical vapor deposition (CVD) process using a silicon source material and a nitrogen source gas. A second oxide layer is formed on the silicon nitride layer. Hence, the charge-trapping dielectric having good erase characteristics is formed. In the SONOS-type non-volatile semiconductor device including the charge-trapping dielectric, a data erase process may be stably performed.

Method of manufacturing a charge-trapping dielectric and method of manufacturing a sonos-type non-volatile semiconductor device

In a method of forming a silicon-rich nanocrystalline structure by an ALD process, a first gas including a first silicon compound is provided onto an object to form a silicon-rich chemisorption layer on the object. A second gas including oxygen is provided onto the silicon-rich chemisorption layer to form a silicon-rich insulation layer on the object. A third gas including a second silicon compound is provided onto the silicon-rich insulation layer to form a silicon nanocrystalline layer on the silicon-rich insulation layer. The first gas, the second gas and the third gas may be repeatedly provided to alternately form the silicon-rich nanocrystalline structure having a plurality of silicon-rich insulation layers and a plurality of silicon nanocrystalline layers on the object.

Method of forming a silicon-rich nanocrystalline structure by an atomic layer deposition process and method of manufacturing a non-volatile semiconductor device using the same

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Gyeonggi-do, South Korea

Sang-ryol Yang