Skhynix Inc.

Samsung Electronics Co., Ltd.

Sang Rok Oh

Jae Seon Yu

Hyung Jun Kim

Jong Woo Sun

Jung Pyo Hong

Sung Yeon Kim

Kwang Nam Kim

A plasma processing device is provided with a chamber including a space that is configured to perform a treatment process for a wafer. A supporting member is disposed inside of the chamber and configured to support the wafer. A gas supply unit is configured to inject a mixed gas in different directions toward the supporting member. The pressure of the mixed gas is increased by adding inert gas to reactive gas.

Device for providing gas to a plasma chamber and a plasma processing device including the same

A semiconductor device including active regions defined in a semiconductor substrate to be non-parallel with a first direction and a second direction which are perpendicular to each other, word lines intersecting active regions and extending in first directions to be spaced apart from each other in the second direction, bit lines crossing over word lines and extending in second directions to be spaced apart from each other in the first direction, first impurity regions disposed in respective ones of central portions of active regions to non-overlap with the word lines, second impurity regions disposed in both ends of each of the active regions to non-overlap with the word lines, and bit line contact plugs disposed between the first impurity regions and the bit lines. The bit line contact plugs having longish shapes including major axes substantially parallel with the second direction and minor axes substantially parallel with the first direction.

Semiconductor devices having bit line contact plugs and methods of manufacturing the same

Growing community of inventors

Yongin-si, South Korea

Sang Rok Oh