Electronics and Telecommunications Research Institute

Sang Ouk Ryu

Byoung Gon Yu

Chan Woo Park

Young Sam Park

Sung Min Yoon

Han Young Yu

Seung Yun Lee

Tae Hyoung Zyung

Nam Yeal Lee

Sung Yool Choi

Ung Hwan Pi

Kyu Jeong Choi

Kwi Dong Kim

Seong Mok Cho

Provided are a phase-change memory device using a phase-change material having a low melting point and a high crystallization speed, and a method of fabricating the same. The phase-change memory device includes an antimony (Sb)-selenium (Se) chalcogenide SbSephase-change material layer contacting a heat-generating electrode layer exposed through a pore and filling the pore. Due to the use of SbSein the phase-change material layer, a higher-speed, lower-power consumption phase-change memory device than a GST memory device can be manufactured.

Phase-change memory device using Sb-Se metal alloy and method of fabricating the same

Provided is a method for manufacturing a nano-gap electrode device comprising the steps of: forming a first electrode on a substrate; forming a spacer on a sidewall of the first electrode; forming a second electrode on an exposed substrate at a side of the spacer; and forming a nano-gap between the first electrode and the second electrode by removing the spacer, whereby it is possible to control the nano-gap position, width, shape, and etc., reproducibly, and manufacture a plurality of nano-gap electrode devices at the same time.

Method for manufacturing nano-gap electrode device

The present invention relates to a pyroelectric infrared ray sensor fabricated by using MEMS processes, wherein an infrared ray absorption layer disposed on the most top portion of the infrared ray sensor assembly is formed with a silicon oxide film (SiO) to exhibit an excellent absorption efficiency with respect to the infrared wavelength band of 8 to 12 mm and function as a protective film for a sensor pixel. In addition, an infrared ray absorption layer, support arms and posts are formed in a single body to allow the sensor assembly to be robust and fabricating processes to be remarkably reduced to increase a process yield.

Infrared ray sensor using silicon oxide film as infrared ray absorption layer and method of fabricating the same

Growing community of inventors

Daejeon-Shi, South Korea

Sang Ouk Ryu