Korea Advanced Institute of Science and Technology

Samsung Electronics Co., Ltd.

Lg Chem, Ltd

Institute for Basic Science

Sang Ouk Kim

Hyun Woo Kim

Ji Eun Kim

Keon Jae Lee

Kyoung Taek Kim

Dong Ki Yoon

Tae Hee Han

In Ho Kim

Duck Hyun Lee

Seong Woon Choi

Shi Yong Yi

Ho Jin Lee

Hee-Tak Kim

Ki Tae Kim

Ju Young Kim

Won Jun Lee

Sun Hwa Lee

Dong Ok Shin

Hong Ju Jung

Kyoung-seon Kim

Shi-Yong Yi

Hyun Wook Kim

Seokhwan Oh

Seok-hwan Oh

Seongwoon Choi

Myoung Hoon Song

Do Kyung Kim

Shiyong Yi

Joonwon Lim

Won Jong Lee

Kyoungseon Kim

Kwi-Il Park

Juhyuk Lee

Bong Hoon Kim

Ju Min Lee

Year In Byun

Geon-Tae Hwang

Jin Ok Hwang

Seung Hak Park

Young Tak Oh

Taeyeong Yun

Seung-hak Park

Hyoung-Seok Moon

Jin Ah Lee

Ji Sun Park

Provided are a graphene-based fiber in which a liquid-crystalline aromatic compound is intercalated into a graphene-based material, a graphene-based carbon fiber obtained by carbonizing the graphene-based fiber, and a method of manufacturing the same.

Graphene-based fiber and graphene-based carbon fiber and method of manufacturing the same

Provided is a manufacturing method of a graphene-based liquid crystal fiber including: polymerizing a first aromatic monomer on a graphene-based compound to prepare a graphene composite in which a first aromatic polymer is surface-polymerized on the graphene-based compound; wet-spinning the graphene composite to manufacture a hydrogel fiber; and polymerizing a second aromatic monomer on the hydrogel fiber to fill pores of the hydrogel fiber with a second aromatic polymer.

Polymer-graphene liquid crystal fiber and a carbon fiber produced by the same and method for manufacturing the same

Provided are a positive electrode for a Zn&#x2014;Br battery, a Zn&#x2014;Br battery including the same, and a method of manufacturing the positive electrode for a Zn&#x2014;Br battery. The positive electrode for a Zn&#x2014;Br battery includes a carbon body doped with pyridinic nitrogen. The Zn&#x2014;Br battery includes a negative electrode including a transition metal coated with zinc, the positive electrode; and an electrolyte. A pH of the electrolyte is in a range of 1.5 to 5.

Positive electrode for Zn&#x2014;Br battery (ZBB) and method of manufacturing the same

Provided is an adsorbent for carbon dioxide, including: a graphene oxide layer having an interconnected network structure; and carbon nitride formed on the graphene oxide layer.

Adsorbent for carbon dioxide and manufacturing method for the same

Provided are a carbon-silicon composite having improved capacity and cycle stability, and a method of preparing the same. More particularly, the present invention relates to a carbon-silicon composite, in which surfaces of silicon particles are coated with a carbon-based material that is doped with at least one type of doping atoms selected from the group consisting of nitrogen (N), phosphorous (P), boron (B), sodium (Na), and aluminum (Al), and a method of preparing the same.

Carbon-silicon composite, method of preparing the same, and anode active material including the carbon-silicon composite

Provided is a method of manufacturing graphene by unzipping doped carbon materials by an external stimulus and a graphene manufactured therefrom.

Method of manufacturing graphene using doped carbon materials

Provided is a nanoscale patterning method using self-assembly, wherein nanoscale patterns having desirable shapes such as a lamella shape, a cylinder shape, and the like, may be formed by using a self-assembly property of a block copolymer, and low segment interaction caused in a structure of 10 nm or less which is a disadvantage of the block copolymer may be prevented. In addition, even though single photolithography is used, pattern density may double as that of the existing nano patterns, and pitch and cycle of the patterns may be controlled to thereby be largely utilized for electronic apparatuses requiring high integration of circuits such as a semiconductor device, and the like.

Nanoscale patterning method and integrated device for electronic apparatus manufactured therefrom

Disclosed are block copolymer nanostructures formed on surface patterns different from nanostructure of the block copolymer and preparation methods thereof.

Block copolymer nanostructure formed on surface pattern with shape different from nanostructure of the block copolymer and method for preparation thereof

The present invention relates to a 3-dimensional nanostructure having nanomaterials stacked on a graphene substrate; and more specifically, to a 3-dimensional nanostructure having at least one nanomaterial selected from nanotubes, nanowires, nanorods, nanoneedles and nanoparticles grown on a reduced graphene substrate. The present invention enables the achievement of a synergy effect of the 3-dimensional nanostructure hybridizing 1-dimensional nanomaterials and 2-dimensional graphene. The nanostructure according to the present invention is excellent in flexibility and elasticity, and can easily be transferred to any substrate having a non-planar surface. Also, all junctions in nanomaterials, a metal catalyst and a graphene film system form the ohmic electrical contact, which allows the nanostructure to easily be incorporated into a field-emitting device.

3-dimensional nanostructure having nanomaterials stacked on graphene substrate and fabrication method thereof

There are provided a flexible nanocomposite generator and a method of manufacturing the same. A flexible nanocomposite generator according to the present invention includes a piezoelectric layer formed of a flexible matrix containing piezoelectric nanoparticles and carbon nanostructures; and electrode layers disposed on the upper and lower surfaces of both sides of the piezoelectric layer, in which according to a method for manufacturing a flexible nanocomposite generator according to the present invention and a flexible nanogenerator, it is possible to manufacture a flexible nanogenerator with a large area and a small thickness. Therefore, the nanogenerator may be used as a portion of a fiber or cloth. Accordingly, the nanogenerator according to the present invention generates power in accordance with bending of attached cloth, such that it is possible to continuously generate power in accordance with movement of a human body.

Flexible nanocomposite generator and method for manufacturing the same

Provided is a method for controlling a device using a doped carbon-nanostructure, and a device including the doped carbon-nanostructure, in which the method for controlling the device selectively controls the mobility of electrons or holes using N-type or P-type doped carbon-nanostructure; the N-type or P-type impurities-doped carbon-nanostructure can selectively control the transport of electrons or holes according to a doped material; and also since the doped carbon-nanostructure limits the transport of charge that is the opposite charge to the transport facilitating charge, it can improve the efficiency of device by adding to a functional layer of device or using as a separate layer in the electrons or holes-only transporting device.

Control method for device using doped carbon-nanostructure and device comprising doped carbon-nanostructure

Provided is a transparent graphene film which is prepared by maintaining the primary reduced state of a graphene oxide thin film via chemical reduction, reducing the graphene oxide thin film with chemical vapor deposition, and doping nitrogen, thereby enhancing the conductivity and enabling the control of work function and a manufacturing method thereof. According to the present disclosure, a flexible, transparent, electrical conductivity-enhanced, and work function controllable graphene film can be large area processed and produced in large quantities so that can be applied in real industrial processes by forming a graphene oxide thin film on a substrate, performing the primary chemical reduction using a reducing agent, and performing further the secondary thermal reduction and nitrogen doping by injecting hydrogen and ammonia gas through chemical vapor deposition equipment.

Nitrogen-doped transparent graphene film and manufacturing method thereof

The present invention relates to a graphene composition having liquid crystalline properties and a preparation method thereof, and more particularly to a graphene composition wherein graphene having useful electrical properties is uniformly dispersed in a medium, whereby it is chemically and physically stable, exhibits a liquid crystal phase in a wide temperature range and has good compatibility with other compounds, and to a preparation method thereof. In the graphene composition, liquid crystalline properties are imparted to graphene, which can be produced in large amounts and has excellent mechanical, chemical and electrical properties, and thus the graphene composition can provide a chance to apply functional carbon materials in various fields, including nanocomposites, energy storage materials, and photonics.

Graphene composition having liquid crystalline properties and preparation method thereof

A method of patterning a substrate includes processing first regions of the substrate to form a first pattern, the first regions defining a second region between adjacent first regions, arranging a block copolymer on the first and second regions, the block copolymer including a first component and a second component, the first component of the block copolymer being aligned on the first regions, and selectively removing one of the first component and the second component of the block copolymer to form a second pattern having a pitch that is less than a pitch of a first region and an adjacent second region.

Method of forming fine patterns using a block copolymer

Methods of forming a pattern and methods of fabricating a semiconductor device having a pattern are provided, the methods include forming a self-assembly induction layer including a first region and a second region on a semiconductor substrate. A block copolymer layer is coated on the self-assembly induction layer. A first pattern, a second pattern and a third pattern are formed by phase separating the block copolymer. At least one of the first, second and third patterns may be removed to form a preliminary pattern. An etching process may be performed using the preliminary pattern as an etching mask. The first pattern contains the same material as that of the second pattern, and the third pattern contains a material different from that of the first pattern.

Methods of forming a pattern and methods of fabricating a semiconductor device having a pattern

Growing community of inventors

Daejeon, South Korea

Sang Ouk Kim