Samsung Electronics Co., Ltd.

Other

Sang-moon Lee

Young-Jin Cho

Eui-chul Hwang

Sung-Hun Lee

Myoung-jae Lee

Ki-ha Hong

Seong-ho Cho

Moon-seung Yang

Kyoung-yeon Kim

Mohammad Rakib Uddin

In Gun Kim

Dong-Soo Lee

David Seo

Young-hyun Kim

Ji-hyun Hur

Jun-Ho Lee

Yu-dong Bae

Sang-chul Ko

Byung-kwon Kang

Byeong-Hoon Park

Young-soo Park

Jun-ho Lee

Young-tae Kim

Anant Baijal

Byeong-seob Ko

Bong-seok Lee

Ki-beom Kim

Jung-hye Kim

Hyun-don Yoon

Young-bu Kim

In-woo Hwang

Byeong-geun Cheon

Taek Woo Kim

Byung-Ok Jeon

A-in Cho

Joung-ho Roh

An audio contents recognition method includes receiving an audio signal; obtaining audio fingerprints (AFPs) based on a spectral shape of the received audio signal; generating hash codes for the obtained audio fingerprints; transmitting a matching query between the generated hash codes and hash codes stored in a database; and receiving a contents recognition result of the audio signal in response to the transmitting, wherein the generating of the hash codes includes: determining a frame interval delta_F of an audio fingerprint to generate the hash codes among the obtained audio fingerprints.

Audio content recognition method and device

A display apparatus including: a display; a loudspeaker; a user input unit; a video processor configured to process a video signal to be displayed as an image on the display, and change a viewpoint of the image displayed on the display in response to a user input made through the user input unit; and an audio processor configured to process an audio signal to be output as a sound from the loudspeaker, determine acoustic features of the audio signal, and adjust the output of the sound from the loudspeaker according to the acoustic features in response to the user input.

Display apparatus and recording medium

The present invention relates to a pharmaceutical composition for preventing and treating cell proliferative diseases comprising a feather of birds and a scale of fish, a scale transformed from the dermis, a degenerated or cornified variant of a scale, or a scale or horny scale of reptiles as an active ingredient. More particularly, the present invention relates to a pharmaceutical composition for preventing and treating cell proliferative diseases comprising a mixture of 70&#x2dc;85 weight % of a feather of birds and 15&#x2dc;30 weight % of a scale of fish, a scale transformed from the dermis, a degenerated or cornified variant of a scale, or a scale or horny scale of reptiles as an active ingredient. The inventive composition has the effect of inhibiting and preventing growth of cancer cells. Accordingly, the inventive composition may be used for anticancer purposes to prevent, ameliorate or treat cancer.

Pharmaceutical composition for preventing and treating cell proliferative disease comprising mixture of feather of birds and scale of fish as an active ingredient

A method performed by a first image display apparatus includes: obtaining a 360-degree image; displaying, on a first display included in the first image display apparatus, a first image corresponding to a first area of the 360-degree image; controlling a second image display apparatus to display a second image corresponding to a second area of the 360-degree image, the second area being adjacent to the first area.

Image display apparatus and operating method thereof

The present disclosure relates to a semiconductor device including an oxygen gettering layer between a group III-V compound semiconductor layer and a dielectric layer, and a method of fabricating the semiconductor device. The semiconductor device may include a compound semiconductor layer; a dielectric layer disposed on the compound semiconductor layer; and an oxygen gettering layer interposed between the compound semiconductor layer and the dielectric layer. The oxygen gettering layer includes a material having a higher oxygen affinity than a material of the compound semiconductor layer.

Semiconductor device and method of fabricating the same

A semiconductor device including a group III-V barrier and a method of manufacturing the semiconductor device, the semiconductor device including: a substrate, insulation layers formed to be spaced apart on the substrate, a group III-V material layer for filling the space between the insulation layers and having a portion protruding higher than the insulation layers, a barrier layer for covering the side and upper surfaces of the protruding portion of the group III-V material layer and having a bandgap larger than that of the group III-V material layer, a gate insulation film for covering the surface of the barrier layer, a gate electrode formed on the gate insulation film, and source and drain electrodes formed apart from the gate electrode. The overall composition of the group III-V material layer is uniform. The barrier layer may include a group III-V material for forming a quantum well.

Method of manufacturing a semiconductor device including a gate electrode on a protruding group III-V material layer

A substrate structure, a complementary metal oxide semiconductor (CMOS) device including the substrate structure, and a method of manufacturing the CMOS device are disclosed, where the substrate structure includes: a substrate, at least one seed layer on the substrate formed of a material including boron (B) and/or phosphorus (P), and a buffer layer on the seed layer. This substrate structure makes it possible to reduce the thickness of the buffer layer and also improve the performance characteristics of a semiconductor device formed with the substrate structure.

Substrate structure, complementary metal oxide semiconductor device, and method of manufacturing complementary metal oxide semiconductor device

Provided are a complementary metal oxide semiconductor (CMOS) device and a method of manufacturing the same. In the CMOS device, a buffer layer is disposed on a silicon substrate, and a first layer including a group III-V material is disposed on the buffer layer. A second layer including a group IV material is disposed on the buffer layer or the silicon substrate while being spaced apart from the first layer.

Complementary metal oxide semiconductor device and method of manufacturing the same

Semiconductor device including a gate electrode on a protruding group III-V material layer and method of manufacturing the semiconductor device

A complementary metal oxide semiconductor (CMOS) device includes an n-type first transistor on a silicon substrate, the n-type first transistor including a Group III-V compound semiconductor substrate, and a p-type second transistor on the silicon substrate, the p-type second transistor including a germanium based substrate.

Complementary metal oxide semiconductor device, optical apparatus including the same, and method of manufacturing the same

Semiconductor device including a gate electrode on a protruding group III-V material layer

Semiconductor devices including a substrate (e.g., silicon substrate), a multi-layer structure disposed on a portion of the substrate, and at least one electrode disposed on the multi-layer structure and methods of manufacturing the same are provided. The multi-layer structure may include an active layer containing a Group III-V material and a current blocking layer disposed between the substrate and the active layer. The semiconductor device may further include a buffer layer disposed between the substrate and the active layer. In a case that the substrate is a p-type, the buffer layer may be an n-type material layer and the current blocking layer may be a p-type material layer. The current blocking layer may contain a Group III-V material. A mask layer having an opening may be disposed on the substrate so that the multi-layer structure may be disposed on the portion of the substrate exposed by the opening.

Semiconductor devices and methods of manufacturing the same

Growing community of inventors

Yongin-si, South Korea

Sang-moon Lee