Samsung Electronics Co., Ltd.

Samsung Sdi Co., Inc.

University of California

Industry-university Cooperation Foundation Hanyang University

Yonsei University

Sang-mock Lee

Jong-soo Rhyee

Jin-seo Noh

Kyu-hyoung Lee

Yoon-Ho Khang

Eun-Sung Lee

Dong-seok Suh

Chan Kwak

Sang-Soo Jee

Hee-jung Park

Se-Yun Kim

Young-Gyoon Ryu

Sung-woo Hwang

Chung-Kun Cho

Sang-il Kim

Kyung-han Ahn

Myung-dong Cho

Boris Aleksandrovich Trofimov

Do-hyang Kim

Yong-Ho Choa

Sung-ho Jin

Soo-yeon Seo

Jin-heong Yim

Young-min Kang

Sung-Soo Kim

Sang-Il Kim

Jun Ho Lee

Seung-sik Hwang

Duck-Chul Hwang

Eun-hong Lee

In-Kyeong Yoo

Chang-Wook Moon

Jae-gu Yoon

Jea-Woan Lee

Joon-Sup Kim

Seung Yeon Lee

Ha-jin Kim

Tae-gon Kim

Choong-Rae Cho

Yoshiaki Nitta

Woong-chul Shin

Xiangshu Li

El Mostafa Bourim

Prabhakar R Bandaru

Ami Berkowitz

Jung Yun Won

Yoon-ho Khang

Jong-ki Lee

Chung-kun Cho

Seung-woon Lee

Hyun-sik Kim

Ka Ram Lim

Doh-won Jung

Young-jae Kang

Dong-hee Yeon

Yong-seung Kwon

Seung-Sik Hwang

Vladimir E Guterman

Vilius Mykhailovsky

Jea-woan Lee

Roman Mochernyuk

A thermoelectric material containing a dichalcogenide compound represented by Formula 1 and having low thermoelectric conductivity and high Seebeck coefficient:RTXY&#x2003;&#x2003;(1)wherein R is a rare earth element, T includes at least one element selected from the group consisting of Group 1 elements, Group 2 elements, and a transition metal, X includes at least one element selected from the group consisting of S, Se, and Te, Y is different from X and includes at least one element selected from the group consisting of S, Se, Te, P, As, Sb, Bi, C, Si, Ge, Sn, B, Al, Ga and In, a is greater than 0 and less than or equal to 1, b is greater than or equal to 0 and less than 1, and n is greater than or equal to 0 and less than 2.

Thermoelectric materials, thermoelectric module including thermoelectric materials, and thermoelectric apparatus including thermoelectric modules

A thermoelectric device including: a thermoelectric material layer comprising a thermoelectric material; a transition layer on the thermoelectric material; and a diffusion prevention layer on the transition layer, wherein the thermoelectric material comprises a compound of Formula 1:(AA')(BB&#x2032;)C&#x2003;&#x2003;Formula 1wherein A and A&#x2032; are different from each other, A is a Group 13 element, and A&#x2032; is at least one element of a Group 13 element, a Group 14 element, a rare-earth element, or a transition metal, B and B&#x2032; are different from each other, B is a Group 16 element, and B&#x2032; is at least one element of a Group 14 element, a Group 15 element, or a Group 16 element, C is at least one halogen atom, a complies with the inequality 0&#x2264;a&#x3c;1, b complies with the inequality 0&#x2264;b&#x3c;1, x complies with the inequality &#x2212;1&#x3c;x&#x3c;1, y complies with the inequality &#x2212;1&#x3c;y&#x3c;1, and z complies with 0&#x2264;z&#x3c;0.5.

Thermoelectric device, thermoelectric module including the thermoelectric device, thermoelectric apparatus including the thermoelectric module, and method of manufacturing the same

An anisotropically elongated thermoelectric nanocomposite includes a thermoelectric material.

Anisotropically elongated thermoelectric material, process for preparing the same, and device comprising the material

A thermoelectric material containing a dichalcogenide compound represented by Formula 1 and having low thermoelectric conductivity and high Seebeck coefficient:RTXY&#x2003;&#x2003;(1) wherein R is a rare earth element, T includes at least one element selected from the group consisting of Group 1 elements, Group 2 elements, and a transition metal, X includes at least one element selected from the group consisting of S, Se, and Te, Y is different from X and includes at least one element selected from the group consisting of S, Se, Te, P, As, Sb, Bi, C, Si, Ge, Sn, B, Al, Ga and In, a is greater than 0 and less than or equal to 1, b is greater than or equal to 0 and less than 1, and n is greater than or equal to 0 and less than 2.

An oxide represented by Formula 1:(SrA)(MQ)DO,&#x2003;&#x2003;Formula 1wherein A is barium (Ba), M is at least one selected from magnesium (Mg) and calcium (Ca), Q is a Group 13 element, D is at least one selected from silicon (Si) and germanium (Ge), 0&#x2266;x&#x2266;2.0, 0&#x3c;y&#x2266;1.0, and d is a value which makes the oxide electrically neutral.

Oxide, electrolyte including oxide, and electrochemical device including oxide

Hard magnetic exchange-coupled composite structures and perpendicular magnetic recording media including the hard magnetic exchange-coupled composite structures, include a ferrite crystal grain and a soft magnetic metal thin film bounded to the ferrite crystal grain by interfacial bonding on an atomic scale and having a thickness of about 5 nm or less, wherein a region of the soft magnetic metal thin film adjacent to an interface with the ferrite crystal grain includes an amorphous soft magnetic metal film.

Hard magnetic exchange-coupled composite structures and perpendicular magnetic recording media including the same

A thermoelectric material including: a bismuth-tellurium (Bi&#x2014;Te)-based thermoelectric material matrix; and a nano-metal component distributed in the Bi&#x2014;Te-based thermoelectric material matrix, wherein a Lotgering degree of orientation in a c-axis direction is about 0.9 to about 1.

Thermoelectric material and method of preparing the same

A soft magnetic exchange-coupled composite structure, and a high-frequency device component, an antenna module, and a magnetoresistive device including the soft magnetic exchange-coupled composite structure, include a ferrite crystal grain as a main phase and a soft magnetic metal thin film bound to the ferrite crystal grain by interfacial bonding on an atomic scale. A region of the soft magnetic metal thin film adjacent to an interface with the ferrite crystal grain includes a crystalline soft magnetic metal.

Soft magnetic exchange-coupled composite structure, and high-frequency device component, antenna module, and magnetoresistive device including the soft magnetic exchange-coupled composite structure

A method of preparing thermoelectric material particles, the method comprising: disposing a first electrode and a second electrode in a dielectric liquid medium, wherein the first and second electrodes each comprise a thermoelectric material; applying an electrical potential between the first and second electrodes to cause a spark between the first and second electrodes to provide a vaporized thermoelectric material at a sparking point of at least one of the first and second electrodes; and cooling the vaporized thermoelectric material with the dielectric liquid medium to prepare the thermoelectric material particles.

Thermoelectric material and method of preparing the thermoelectric material

A thermoelectric material including a thermoelectric semiconductor; and a nanosheet disposed in the thermoelectric semiconductor, the nanosheet having a layered structure and a thickness from about 0.1 to about 10 nanometers. Also a thermoelectric element and thermoelectric module including the thermoelectric material.

Thermoelectric nanocomposite, thermoelectric element, and thermoelectric module

A thermoelectric material having a high performance index and a thermoelectric module and a thermoelectric device including the thermoelectric material, and more particularly, to a thermoelectric material having a high Seebeck coefficient, high electrical conductivity, and low thermal conductivity and a thermoelectric module and a thermoelectric device including the thermoelectric material.

Thermoelectric material, and thermoelectric module and thermoelectric device comprising the thermoelectric material

A thermoelectric material includes powders having a surface coated with an inorganic material. The thermoelectric material includes a thermoelectric semiconductor powder and a coating layer on an outer surface of the thermoelectric semiconductor powders.

Thermoelectric material including coating layers, method of preparing the thermoelectric material, and thermoelectric device including the thermoelectric material

A conductive paste including a conductive powder, a metallic glass, and an organic vehicle, wherein the metallic glass has a resistivity that is decreased when the metallic glass is heat treated at a temperature that is higher than a glass transition temperature of the metallic glass.

Conductive paste and electronic device and solar cell including an electrode formed using the conductive paste

A thermoelectric material including a composition according to Chemical Formula 1:(BiSbM)(TeSe)&#x2003;&#x2003;Chemical Formula 1wherein M is an element of Group 13, 0&#x2266;a&#x2266;1, 0&#x3c;b&#x2266;0.004, 0&#x2266;x&#x2266;b, 0&#x2266;y&#x2266;b, x+y=b, 0&#x2266;c&#x2266;1, &#x2212;0.2&#x2266;i&#x2266;0.2, and &#x2212;0.2&#x2266;j&#x2266;0.2.

Thermoelectric material, thermoelectric device using the same, and method of manufacturing thereof

A thermoelectric material including a compound represented by Formula 1 below:(RR')(TT&#x2032;)&#x2003;&#x2003;Formula 1wherein R and R&#x2032; are different from each other, and each includes at least one element selected from a rare-earth element and a transition metal, T and T&#x2032; are different from each other, and each includes at least one element selected from sulfur (S), selenium (Se), tellurium (Te), phosphorus (P), arsenic (As), antimony (Sb), bismuth (Bi), carbon (C), silicon (Si), germanium (Ge), tin (Sn), boron (B), aluminum (Al), gallium (Ga), and indium (In), 0&#x2266;a&#x2266;1, 0&#x2266;b&#x2266;1, and 0&#x2266;y&#x3c;1.

Thermoelectric material, and thermoelectric module and thermoelectric device including the thermoelectric material

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Yongin-si, South Korea

Sang-mock Lee