Samsung Electronics Co., Ltd.

Skhynix Inc.

Sang-Min Hwang

Jeong-Ho Cho

Jeong-Min Park

Ki-Huk Lee

Woo-Yong Lee

Cheol-Ho Cheong

Dong-Han Lee

Hee-Jun Choi

Yoo-Mi Tak

An electronic device according to one example of the present invention comprises: a proximity sensor for generating proximity information on an object which approaches the electronic device; an iris sensor for detecting an iris; and a first processor for controlling the electronic device, wherein the first processor can be set to: determine the distance between the electronic device and the object on the basis of the proximity information generated by the proximity sensor; detect the iris by using the iris sensor when the distance between the electronic device and the object is greater than a first reference value; and inactivate the iris sensor when the distance between the electronic device and the object is less than or equal to the first reference value. In addition, other examples are possible.

Method for controlling operation of iris sensor and electronic device therefor

A method for operating an electronic device including a sensor unit that uses infrared rays is provided. In the method, a light source is illuminated using at least one light emitting device. Whether the illuminated light source is received by a light receiving device including at least one light receiving channel is determined. A relevant function corresponding to an amount of light of the light source received by the at least one light receiving channel is performed.

Electronic device having sensor unit and operating method thereof

A memory device including variable resistance elements comprises a plurality of memory cells configured to store data; a first signal transmission/reception unit and a second signal transmission/reception unit configured to transmit a signal to the memory cells or receive a signal from the memory cells; a first transmission line arranged to couple first ends of the memory cells to the first signal transmission/reception unit; and a second transmission line configured to couple second ends of the memory cells to the second signal transmission/reception unit, wherein a first resistance of a first signal path coupled between the first and second signal transmission/reception units through a first memory cell of the memory cells is substantially equal to a second electrical resistance of a second signal path coupled between a second memory cell and the first and second signal transmission/reception units through a second memory cell of the memory cells.

Variable resistance memory device having equal resistances between signal paths regardless of location of memory cells within the memory array

Growing community of inventors

Gyeonggi-do, South Korea

Sang-Min Hwang