Samsung Electronics Co., Ltd.

Samsung Sdi Co., Inc.

Sang-Mi Lee

Cha-Won Hwang

Kwang-Shin Lim

Sang-Mun Chon

Pil-Kwon Jun

Jung-Dae Park

Yeon-Joo Choi

Yong-Kyun Ko

Tae-Hyo Choi

Myoung-Ok Han

Seung-goo Baek

In-Hoi Doh

An optical filter including: a base film; and a function incorporation layer on the base film and for shielding electromagnetic interference and absorbing external light, the function incorporation layer having a cross mesh pattern, wherein the cross mesh pattern includes a plurality of pattern lines, and wherein at least a part of the cross mesh pattern protrudes from a surface of the function incorporation layer facing toward the reflection prevention layer.

Optical filter and flat display panel comprising the same

A display panel easily implements reflection color of a display. The display panel includes a panel which has a plate shape to implement an image, and an optical filter which is attached to the panel. The optical filter includes a color compensating layer which implements transmittance color by controlling transmittance light passing from an interior to an exterior of the panel, and a reflection layer which implements reflection color by controlling reflection light which is incident from the exterior to the panel, and which is reflected.

Display panel and optical filter which control transmittance color and reflection color

A display filter includes a base film disposed on a display panel. The base film includes a phototransmissive unit having a constant horizontal cross-sectional area, and a light absorbing unit which includes a light absorbing material and surrounds the phototransmissive unit. A plasma display panel (PDP) may include the display filter. The display filter may improve ambient contrast by increasing the transmittance of light emitted by a display panel and by blocking externally incident light.

Display filter and plasma display panel including the same

In a composition for removing a polymeric contaminant that may remain on an apparatus for manufacturing a semiconductor device and a method of removing a polymeric contaminant using the composition, the composition includes from about 5 to 10 percent by weight of a fluoride salt, from about 5 to 15 percent by weight of an acid or a salt thereof, and from about 75 to 90 percent by weight of an aqueous solution of glycol. The composition can effectively remove the polymeric contaminant from the apparatus within a relatively short period of time, and suppress damages to parts of the apparatus.

Composition for removing a polymeric contaminant and method of removing a polymeric contaminant using the same

An exemplary etching composition includes about 0.1 to 8% by weight of hydrogen fluoride, about 10 to 25% by weight of ammonium fluoride, about 0.0001 to 3% by weight of a non-ionic polymer surfactant, and water. Using the composition in a wet etching process, an oxide layer may be selectively removed while a pattern or storage electrode including polysilicon may be effectively passivated. The oxide layer may be removed with a high etching selectivity, while at the same time minimizing damage to the polysilicon layer.

Etching composition, method of preparing the same, method of etching an oxide film, and method of manufacturing a semiconductor device

In a method for removing a nitride layer of a semiconductor device, an etchant including about 15 to about 40 percent by volume of hydrofluoric acid, about 15 to about 60 percent by volume of phosphorous acid, and about 25 to about 45 percent by volume of deionized water is prepared. The etchant is provided onto a nitride layer that is formed on a bevel, a front side or a backside of a substrate to remove the nitride layer. The substrate is rinsed using deionized water, and then the substrate is dried. The etchant rapidly removes the nitride layer at a relatively low temperature to avoid damage to the substrate.

Growing community of inventors

Suwon-si, South Korea

Sang-Mi Lee