Cheil Industries Inc.

Samsung Sdi Co., Inc.

Samsung Electronics Co., Ltd.

Samsung Display Devices Co., Ltd.

Cheil Industry, Inc.

Sang-Kyun Kim

Jin-Hee Bae

Taek-Soo Kwak

Hui-Chan Yun

Jong-Seob Kim

Kwen-Woo Han

Han-Song Lee

Sang-Hak Lim

Hyun-Ji Song

Eun-Su Park

Mi-Young Kim

Jong-Hwa Lee

Ji-Yun Kwon

Sang-Ran Koh

Go-Un Kim

Dae-Yun Kim

Bong-Hwan Kim

Woo-Jin Lee

Jin-Wook Lee

Sang-Soo Kim

Jun-Ho Lee

Hyun-Yong Cho

Seung-Hee Hong

Eun-Ha Hwang

Yoong-Hee Na

Byeong-Gyu Hwang

Bo-Sun Kim

Jin-Young Lee

Wan-Hee Lim

Eun-Kyung Yoon

Jin-Woo Seo

Sang-Kyeon Kim

Dong-il Han

Hyeon-Mo Cho

Chung-Beom Hong

Jung-Kang Oh

Hwan-Sung Cheon

Jin-Hee Kang

Youn-Jin Cho

Youn-Hee Nam

Duk-Sung Park

Kun-Bae Noh

Sun-Hae Kang

Chang-Soo Woo

Jae-Hyun Kim

Sang-Il Park

Du-Sik Park

Young-Min Kim

Jin-young Lee

In-chul Hwang

Sung-Hwan Kim

Dong Seon Uh

Mi-young Kim

Dong-Min Kang

Jong Seob Kim

Tae-ho Kim

Chang-Yeong Kim

Dong-Geun Lee

Kwang-bok Kim

Sang Jo Lim

Yong-tae Kim

Jung-sik Choi

Jung-Min Choi

Jin Kuk Lee

Yun-Jun Kim

Chang Il Oh

Yoo-Jeong Choi

Yong-Sik Yoo

Hyo-Young Kwon

Eui-June Jeong

Jun-Young Jang

Hea-Jung Kim

Joon-Young Moon

Hui Chan Yun

Nam-Gwang Kim

Se-Young Choi

Seulgi Jeong

Doo-Young Jung

Sung-Hwan Cha

Chung-Kyung Jung

Young-wook Sohn

Yu-Shin Park

Jong-Kwon Ko

Yun-Jeong Kim

Bong-wook Jung

Byeri Yoon

Ye-hwan Kim

Dong-jin Kim

June-Ho Shin

Ahn-Ho Lee

Hyun-Jung Ahn

Sae-Mi Park

Gi-Sik Hong

Young-Eun Choi

Young-woo Song

Choong-Ho Han

Yong-Jin Chung

Hyun-Hoo Sung

Dong-Hun Kang

Young-Chul Jung

A composition for forming a silica based layer includes a silicon-containing compound including polysilazane, polysiloxazane, or a combination thereof and one or more kinds of solvent, and having a turbidity increasing rate of less than or equal to about 0.13.

Composition for forming a silica based layer, method for manufacturing silica based layer, and electronic device including the silica based layer

A polymer includes a structural unit represented by Chemical Formula 1 and an organic layer composition including the same. wherein in Chemical Formula 1, A is a carbon cyclic group including at least one hetero atom, B is one of groups in Group 1, where Arto Ar, Rto R, L and m are as defined in the specification and * is a linking point. When the carbon cyclic group includes at least two hetero atoms when the carbon cyclic group includes a pentagon cyclic moiety and the pentagon cyclic moiety includes a nitrogen atom (N) as a hetero atom, and the at least two hetero atoms are the same or different: 

Polymer, organic layer composition, organic layer, and method of forming patterns

A cleaning composition includes an organic solvent, an organic acid, a chelating agent, a surfactant containing at least one hydroxyl group (OH) at the end, and an ultra pure water, wherein a pH value of the cleaning composition is equal to or higher than 12.

Cleaning composition after chemical mechanical polishing of organic film and cleaning method using the same

Disclosed is a composition for a silica-based insulation layer including hydrogenated polysilazane or hydrogenated polysiloxzane, wherein a concentration of a cyclic compound having a weight average molecular weight of less than 400 is less than or equal to 1,200 ppm. The composition for a silica-based insulation layer may reduce a thickness distribution during formation of a silica-based insulation layer, and thereby film defects after chemical mechanical polishing (CMP) during a semiconductor manufacturing process may be reduced.

Composition for forming silica-based insulating layer, method for preparing composition for forming silica-based insulating layer, silica-based insulating layer, and method for manufacturing silica-based insulating layer

The present invention discloses a photosensitive resin composition for an insulating film of a display device including (A) an alkali soluble resin; (B) a photosensitive diazoquinone compound; (C) a color material having a maximum absorption wavelength of 400 to 550 nm; and (D) a solvent, an insulation film using the same, and a display device including the insulation film.

Photosensitive resin composition for display device insulation film, and display device insulation film and display device using same

A hardmask composition includes a polymer including a moiety represented by the following Chemical Formula 1 and a solvent. In the above Chemical Formula 1, A and B are as defined in the specification.

Hardmask composition and method of forming patterns using the hardmask composition

A chemical mechanical polishing (CMP) slurry composition for polishing an organic layer and a method of forming a semiconductor device using the same are disclosed. The CMP slurry composition may include from 0.001% to 5% by weight of oxide-polishing particles; from 0.1% to 5% by weight of an oxidant; from 0% to 5% by weight of a polishing regulator; from 0% to 3% by weight of a surfactant; from 0% to 3% by weight of a pH regulator; and from 79% to 99.889% by weight of deionized water. The use of the CMP slurry composition makes it possible to allow a silicon-free organic layer to be polished with a selectivity higher than 6:1 with respect to an oxide layer.

CMP slurry composition for polishing an organic layer and method of forming a semiconductor device using the same

A rinse liquid for an insulation layer, the rinse liquid including a solvent represented by the following Chemical Formula 1: 

Rinse liquid for insulating film and method of rinsing insulating film

A resist underlayer composition and a method of manufacturing a semiconductor integrated circuit device, the composition including a solvent and an organosilane polymer, the organosilane polymer being a condensation polymerization product of at least one first compound represented by Chemical Formulae 1 and 2 and at least one second compound represented by Chemical Formulae 3 to 5.

Resist underlayer composition and method of manufacturing semiconductor integrated circuit device using the same

Disclosed is a positive photosensitive resin composition that includes (A) an alkali soluble resin selected from a polybenzoxazole precursor, a polyimide precursor, and a combination thereof, (B) a photosensitive diazoquinone compound, (C) a phenol compound, (D) an organic dye and (E) a solvent, wherein the organic dye (D) includes at least one red dye having an absorption wavelength of 590 to 700 nm, at least one yellow dye having an absorption wavelength of 550 to 590 nm, and at least one blue dye having an absorption wavelength of 450 to 500 nm.

Positive photosensitive resin composition

A method of preparing a gap filler agent includes adding a halosilane to a basic solvent, and, to the basic solvent and the halosilane, adding ammonia in an amount of about 50 to about 70 parts by weight based on 100 parts by weight of the halosilane at a rate of about 1 g/hr to about 15 g/hr.

Process of preparing a gap filler agent, a gap filler agent prepared using same, and a method for manufacturing semiconductor capacitor using the gap filler agent

A resist underlayer composition includes a solvent and an organosilane condensation polymerization product, the organosilane condensation polymerization product including about 40 to about 80 mol % of a structural unit represented by the following Chemical Formula 1, 

Resist underlayer composition and process of producing integrated circuit devices using the same

A composition for forming silica-based insulation layer includes a hydrogenated polysiloxazane including a moiety represented by the following Chemical Formula 1 and a moiety represented by the following Chemical Formula 2, and having a chlorine concentration of about 1 ppm or less: 

Composition for forming silica based insulating layer, method for manufacturing composition for forming silica based insulating layer, silica based insulating layer and method for manufacturing silica based insulating layer

A composition for forming a silica layer, a method of manufacturing the composition, a silica layer prepared using the composition, and a method of manufacturing the silica layer, the composition including hydrogenated polysilazane, hydrogenated polysiloxazane, or a combination thereof, wherein a concentration of a sum of hydrogenated polysilazane and hydrogenated polysiloxazane having a weight average molecular weight, reduced to polystyrene, of greater than or equal to about 50,000 is about 0.1 wt % or less, based on a total amount of the hydrogenated polysilazane and hydrogenated polysiloxazane.

Composition for forming a silica layer, method of manufacturing the composition, silica layer prepared using the composition, and method of manufacturing the silica layer

A resist underlayer composition includes a solvent, and an organosilane condensation polymerization product of: a compound represented by the following Chemical Formula 1, a compound represented by the following Chemical Formula 2, and a compound represented by the following Chemical Formula 3,[RO]Si&#x2014;X&#x2003;&#x2003;[Chemical Formula 1][RO]Si&#x2014;R&#x2003;&#x2003;[Chemical Formula 2][RO]Si&#x2014;Si[OR].&#x2003;&#x2003;[Chemical Formula 3]

Growing community of inventors

Uiwang-si, South Korea

Sang-Kyun Kim