Samsung Electronics Co., Ltd.

Sang-kwon Moon

Kyung-ho Kim

Kyung-Ryun Kim

Hee-Won Lee

Seong-Jun Ahn

Seung-Uk Shin

Jong-youl Lee

Dong-sub Kim

Fast reuse memory block detection methods and memory block management methods using the same are provided. A fast reuse memory block detection method may include selecting a memory block from memory blocks included in a nonvolatile memory device as a reference block at an initially set period, managing one of an erase time and a program time of the reference block, and determining whether other memory blocks are fast reuse memory blocks, based on a use period that is determined according to the managed one of the erase time and the program time of the reference block.

Methods of detecting fast reuse memory blocks and memory block management methods using the same

According to example embodiments, a method of controller a memory system using a controller includes receiving a first read count command, determining if a read count of a non-volatile memory in the memory system exceeds a threshold value, and performing a first reading operation on the non-volatile memory according to the first read command. If the read count of the non-volatile memory exceeds the threshold value, then addresses are selected to which a plurality of additive reading operation corresponding to the first read command will be performed, in a random neighbor selection operation. The plurality of additive reading operations for checking data of neighboring pages of the page for performing the reading operation are distributed and processed.

Method of controlling a memory system

A flash memory system is provided. The flash memory system includes a memory device including a memory cell array including at least one data block and a controller that determines whether to end background garbage collection according to a lifespan index of the at least one data block. The lifespan index may be decreased by the background garbage collection. The controller may end the background garbage collection when the decreased lifespan index is equal to or higher than a reference value.

Memory device and controlling method of the same

Growing community of inventors

Pyeongtaek-si, South Korea

Sang-kwon Moon