Samsung Electronics Co., Ltd.

Sang-Kwon Moon

Jong-Won Kim

In-Soo Kim

Shin-Ho Oh

Sang-won Jung

Sng-Hoon Park

Min-Cheol Kwon

A nonvolatile memory device includes multi-level cells in a memory cell array including a plurality of memory blocks, and each of the memory blocks includes a plurality of pages. A method of operating the nonvolatile memory device includes pre-programming multi-bit data in a pre-program block of the memory blocks, dividing the multi-level cells into a plurality of state groups based on state codes indicating states of the multi-level cells to generate digest data indicating state group codes corresponding to the state groups, and programming the digest data in a digest block of the memory blocks.

Methods of operating nonvolatile memory devices, methods of operating storage device and storage devices

A memory controller is disclosed. The memory controller is configured to control the execution of a suspend operation by a memory device. The memory controller includes: a processor configured to output an operation control signal when the memory device is performing a program/erase operation; and a suspend operation manager configured to output suspend mode change information based on the operation control signal and suspend information, wherein the processor is further configured to control the memory controller such that the memory controller outputs a suspend mode change command and a suspend command based on the suspend mode change information.

Memory controller and method-controlling suspend mode

Memory controller and method controlling suspend mode

Growing community of inventors

Hwaseong-si, South Korea

Sang-Kwon Moon