Senic Inc.

Korea Electronics Technology Institute

Skc Co., Ltd.

Sang Ki Ko

Jung Woo Choi

Jung-Gyu Kim

Kap-Ryeol Ku

Byung Kyu Jang

Jong Hwi Park

Eun Su Yang

Jongmin Shim

Myung-Ok Kyun

Hye Dong Jung

Yeon Sik Lee

Han Mu Park

Chang Jo Kim

Choong Sang Cho

Jung Doo Seo

Young Han Lee

Myung Ok Kyun

Jung Gyu Kim

Kap Ryeol Ku

Il Hwan Yoo

A wafer manufacturing method, an epitaxial wafer manufacturing method, and a wafer and epitaxial wafer manufactured thereby, are provided. The wafer manufacturing method enables the manufacture of a wafer with a low density of micropipe defects and minimum numbers of particles and scratches. The epitaxial wafer manufacturing method enables the manufacture of an epitaxial wafer that has low densities of defects such as downfall, triangular, and carrot defects, exhibits excellent device characteristics, and improves the yield of devices.

Wafer manufacturing method, epitaxial wafer manufacturing method, and wafer and epitaxial wafer manufactured thereby

A method of growing a semi-insulating SiC single crystal ingot, the method comprising the steps of: (1) placing a dopant coated with silicon carbide (SiC) and a carbon-based material into a reaction vessel containing a seed crystal fixed thereto; and (2) growing a SiC single crystal on the seed crystal, thereby yielding a high-quality semi-insulating SiC single crystal ingot with a uniform thickness-based doping concentration. In addition, another embodiment relates to a method of growing a semi-insulating silicon carbide single crystal ingot, the method comprising the steps of: (a) placing in a reaction vessel, a composition comprising a carbon-containing polymer resin, a solvent, a dopant, and silicon carbide (SiC); (b) solidifying the composition; and (c) growing a SiC single crystal ingot on a seed crystal fixed to the reaction vessel, thereby yielding a high-quality semi-insulating SiC single crystal ingot with a uniform thickness-based doping concentration.

Apparatus for growing a SiC single crystal ingot comprising a filter unit having a porous body surrounding an opening unit that is located under a seed crystal

Example embodiments relate to a method of measurement, an apparatus for measurement, and an ingot growing system that measure properties relating an induction heating characteristic of a graphite article. The method of measurement comprises an arranging step of arranging a graphite article to the coil comprising a winded conducting wire; and a measuring step of applying power for measurement to the coil through means of measurement connected electronically to the coil, and measuring electromagnetic properties induced in the coil. The method of measurement and the like measure electromagnetic properties of graphite articles like an ingot growing container, and an insulating material, and provide data required for selecting so that further enhanced reproducibility for growth of an ingot can be secured.

Method of measuring a graphite article, apparatus for a measurement, and ingot growing system

Method of growing semi-insulating silicon carbide single crystal using dopant coated with a carbon-based material

A method of manufacturing a silicon carbide ingot, includes a preparing operation of adjusting internal space of a reactor in which silicon carbide raw materials and a seed crystal are disposed to have a high vacuum atmosphere, a proceeding operation of injecting an inert gas into the internal space, heating the internal space by moving a heater surrounding the reactor to induce the silicon carbide raw materials to sublimate, and growing the silicon carbide ingot on the seed crystal, and a cooling operation of cooling the temperature of the internal space to room temperature. The moving of the heater has a relative position which becomes more distant at a rate of 0.1 mm/hr to 0.48 mm/hr based on the seed crystal.

Method of manufacturing a silicon carbide ingot comprising moving a heater surrounding a reactor to induce silicon carbide raw materials to sublimate and growing the silicon carbide ingot on a seed crystal

A method and apparatus for recognizing a sign language or a gesture by using a three-dimensional (3D) Euclidean distance matrix (EDM) are disclosed. The method includes a two-dimensional (2D) EDM generation step for generating a 2D EDM including information about distances between feature points of a body recognized in image information by a 2D EDM generator, a 3D EDM generation step for receiving the 2D EDM and generating a 3D EDM by using a first deep learning neural network trained with training data in which input data is a 2D EDM and correct answer data is a 3D EDM by a 3D EDM generator, and a recognition step for recognizing a sign language or a gesture based on the 3D EDM.

Method and apparatus for recognizing sign language or gesture using 3D EDM

A method for preparing a SiC ingot includes: preparing a reactor by disposing a raw material in a crucible body and disposing a SiC seed in a crucible cover, and then wrapping the crucible body with a heat insulating material having a density of 0.14 to 0.28 g/cc; and growing the SiC ingot from the SiC seed by placing the reactor in a reaction chamber and adjusting an inside of the reactor to a crystal growth atmosphere such that the raw material is vapor-transported and deposited to the SiC seed.

Method for preparing SiC ingot, method for preparing SiC wafer and the SiC wafer prepared therefrom

A method of cleaning a wafer comprises: a scrubbing operation comprising treating a target wafer to be cleaned with a brush at a rotation rate of 200 rpm or less to prepare a brush cleaned wafer; and a cleaning operation comprising cleaning the brush cleaned wafer with a cleaning solution to prepare a cleaned bare wafer, wherein the cleaning operation comprises a first cleaning operation and a second cleaning operation sequentially.

Method of cleaning wafer and wafer with reduced impurities

A silicon carbide ingot producing method is provided. The method produces a silicon carbide ingot in which an internal space of a reactor is depressurized and heated to create a predetermined difference in temperature between upper and lower portions of the internal space. The method produces a silicon carbide ingot in which a plane of a seed crystal corresponding to the rear surface of the silicon carbide ingot is lost minimally. Additionally, the method produces a silicon carbide ingot with few defects and good crystal quality.

Method and system for producing silicon carbide ingot

A wafer having relaxation moduli different by 450 GPa or less, as determined by dynamic mechanical analysis, when loaded to 1 N and 18 N with a loading rate of 0.1 N/min at a temperature of 25&#xb0; C.

Silicon carbide ingot, wafer, method for producing a silicon carbide ingot, and method for manufacturing a wafer

Disclosed is a method of providing a sign language video reflecting an appearance of a conversation partner. The method includes recognizing a speech language sentence from speech information, and recognizing an appearance image and a background image from video information. The method further comprises acquiring multiple pieces of word-joint information corresponding to the speech language sentence from joint information database, sequentially inputting the word-joint information to a deep learning neural network to generate sentence-joint information, generating a motion model on the basis of the sentence-joint information, and generating a sign language video in which the background image and the appearance image are synthesized with the motion model. The method provides a natural communication environment between a sign language user and a speech language user.

Method, apparatus, and terminal for providing sign language video reflecting appearance of conversation partner

A method for preparing a SiC ingot includes: disposing a raw material and a SiC seed crystal facing each other in a reactor having an internal space; subliming the raw material by controlling a temperature, a pressure, and an atmosphere of the internal space; growing the SiC ingot on the seed crystal; and collecting the SiC ingot after cooling the reactor. The wafer prepared from the ingot, which is prepared from the method, generates cracks when an impact is applied to a surface of the wafer, the impact is applied by an external impact source having mechanical energy, and a minimum value of the mechanical energy is 0.194 J to 0.475 J per unit area (cm).

Method for preparing silicon carbide wafer and silicon carbide wafer

A SiC ingot includes: a main body including a first cross-sectional plane of the main body and a second cross-sectional plane of the main body facing the first cross-sectional plane; and a protrusion disposed on the second cross-sectional plane and including a convex surface from the second cross-sectional plane of the main body, wherein a first end point disposed at one end of the second cross sectional plane, a second end point disposed at another end of the second cross sectional plane, and a peak point disposed on the convex surface are disposed on a third cross-sectional plane of the main body perpendicular to the first cross-sectional plane, and wherein a radius of curvature of an arc corresponding to a line of intersection between the third cross-sectional plane and the convex surface satisfies Equation 1 below:3&#x2264;37&#x2003;&#x2003;[Equation 1]where r is the radius of curvature of the arc corresponding to the line of intersection between the third cross-sectional plane and the convex surface, and D is a length of a line of intersection between the first cross-sectional plane and the third cross-sectional plane.

Silicon carbide ingot, method of preparing the same, and method for preparing silicon carbide wafer

An adhesive layer of seed crystal includes a graphitized adhesive layer, wherein the graphitized adhesive layer is prepared by heat-treating a pre-carbonized adhesive layer, and wherein the adhesive layer has Vr value of 28%/mmor more, and the Vr value is represented by Equation 1 below:  

Adhesive layer of seed crystal, method for preparing a laminate using the same, and method for preparing a wafer

A method for preparing a SiC ingot includes preparing a crucible assembly comprising a crucible body having an internal space, loading a raw material into the internal space of the crucible body and placing a plurality of SiC seed in the internal space of the crucible body at regular intervals spaced apart from the raw material, and growing the SiC ingot from the plurality of SiC seed by adjusting the internal space of the crucible body to a crystal growth atmosphere such that the raw material is vapor-transported and deposited to the plurality of SiC seed. A density of the crucible body may be 1.70 to 1.92 g/cm.

Growing community of inventors

Suwon-si, South Korea

Sang Ki Ko