Samsung Electro-mechanics Co., Ltd.

Sang Kee Yoon

Chang Hyun Lim

Tae Yoon Kim

Moon Chul Lee

Tae Kyung Lee

Jong Woon Kim

Won Jae Han

Tae Hun Lee

Sung Cheon Jung

Hyun Kee Lee

Jung Hyun Lee

Yong Suk Kim

Sung Jun Lee

Seung Hun Han

Sung Min Cho

Yoon Shik Hong

Joon Seok Kang

Dae Ho Kim

Sang Uk Son

Tae Joon Park

Suk Kee Hong

Young Gyu Lee

Hyung Jae Park

Hwa Sun Lee

Hyun Ho Shin

Jin Suk Son

Ran Hee Shin

Yeong Gyu Lee

Sung Sun Kim

Heung Woo Park

Je Hong Kyoung

Dae Hun Jeong

Nam Soo Park

Nam Jung Lee

Jong Sam Kim

An acoustic wave resonator includes a resonating part disposed on and spaced apart from a substrate by a cavity, the resonating part including a membrane layer, a first electrode, a piezoelectric layer, and a second electrode that are sequentially stacked. 0 &#x212b;&#x2264;&#x394;Mg&#x2264;170 &#x212b; may be satisfied, &#x394;Mg being a difference between a maximum thickness and a minimum thickness of the membrane layer disposed in the cavity.

Acoustic wave resonator

An acoustic resonator includes a substrate, an insulation layer disposed on the substrate, a resonating portion disposed on the insulation layer and having a first electrode, a piezoelectric layer, and a second electrode, stacked thereon, a cavity disposed between the insulation layer and the resonating portion, a protruded portion having a plurality of protrusions disposed on a lower surface of the cavity, and a hydrophobic layer disposed on an upper surface of the cavity and a surface of the protruded portion.

Acoustic resonator

A bulk acoustic wave resonator includes: a substrate; a membrane layer forming a cavity together with the substrate; a lower electrode disposed on the membrane layer; a piezoelectric layer disposed on a flat surface of the lower electrode; and an upper electrode covering a portion of the piezoelectric layer and exposing a side of the piezoelectric layer to air, wherein the piezoelectric layer includes a step portion extended from the side of the piezoelectric layer and disposed on the flat surface of the lower electrode.

Bulk acoustic wave resonator

A bulk acoustic resonator includes: a substrate; a first electrode disposed on the substrate; a piezoelectric layer disposed to cover at least a portion of the first electrode; a second electrode disposed to cover at least a portion of the piezoelectric layer; and an insertion layer disposed below a partial region of the piezoelectric layer. A thickness of the first electrode in an active region in which the first electrode, the piezoelectric layer, and the second electrode overlap one another is less than a thickness of a region outside the active region. An angle of inclination of an internal side surface of the insertion layer is different from an angle of inclination of an external side surface of the insertion layer.

Bulk acoustic resonator and filter device

An acoustic resonator includes: a substrate; a resonant portion including a center portion in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on the substrate, and an extension portion disposed along a periphery of the center portion; and a first metal layer disposed outwardly of the resonant portion to be electrically connected to the first electrode. The extension portion includes a lower insertion layer disposed on an upper surface of the first electrode or a lower surface of the first electrode. The piezoelectric layer includes a piezoelectric portion disposed in the center portion, and a bent portion disposed in the extension portion and extended from the piezoelectric portion at an incline according to a shape of the lower insertion layer. The lower insertion layer is formed of a conductive material extending an electrical path between the first electrode and the first metal layer.

Acoustic resonator and method of manufacturing thereof

A bulk-acoustic wave resonator includes: a resonator comprising a central portion in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on a substrate, and an extension portion disposed along a periphery of the central portion; and an insertion layer disposed below the piezoelectric layer in the extension portion to raise the piezoelectric layer. The insertion layer may have a first inclined surface formed along a side surface facing the central portion, and the first electrode may have a second inclined surface extending from a lower end of the first inclined surface of the insertion layer.

Bulk-acoustic wave resonator

A bulk acoustic resonator includes: a substrate including an upper surface on which a substrate protection layer is disposed; and a membrane layer forming a cavity together with the substrate, wherein a thickness deviation of either one or both of the substrate protection layer and the membrane layer is 170 &#x212b; or less.

Bulk acoustic resonator and filter including the same

An acoustic resonator includes a substrate, a center portion, an extending portion, and a barrier layer. A first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on the substrate in the central portion. The extending portion is configured to extend from the center portion, and includes an insertion layer disposed below the piezoelectric layer. The barrier layer is disposed between the first electrode and the piezoelectric layer.

Acoustic resonator and method for manufacturing the same

A bulk-acoustic wave resonator includes a substrate, a cavity formed in the substrate, a first electrode, a piezoelectric layer, and a second electrode stacked in order on the substrate, a resonator defined by the first electrode, the piezoelectric layer, and the second electrode overlapping in a vertical direction in an upper portion of the cavity, an additional layer disposed on one surface of the first electrode arranged in a wiring region on an external side of the resonator, and a wiring electrode connected to the first electrode arranged in the wiring region. The first electrode forms a contact interfacial surface with the additional layer and the wiring electrode.

A bulk acoustic wave resonator includes a membrane layer, together with a substrate, forming a cavity, a lower electrode disposed on the membrane layer, a piezoelectric layer disposed on a flat surface of the lower electrode and an upper electrode covering a portion of the piezoelectric layer. An overall region at a side of the piezoelectric layer is exposed to the air. The side of the piezoelectric layer has a gradient of 65&#xb0; to 90&#xb0; with respect to a top surface of the lower electrode.

A method of manufacturing a bulk acoustic wave resonator includes: forming a sacrificial layer on a substrate protection layer; forming a membrane layer on the substrate protection layer to cover the sacrificial layer; and forming a cavity by removing the sacrificial layer using a gas mixture comprising a halide-based gas and an oxygen-containing gas, wherein a mixture ratio of the halide-based gas to the oxygen-containing gas in the gas mixture is in a range from 1.5 to 2.4.

Bulk acoustic wave resonator and method of manufacturing the same

An acoustic resonator includes: a central portion; an extension portion extended outwardly of the central portion; a first electrode, a piezoelectric layer, and a second electrode sequentially stacked on a substrate, in the central portion; and an insertion layer disposed below the piezoelectric layer in the extension portion, wherein the piezoelectric layer includes a piezoelectric portion disposed in the central portion, and a bent portion disposed in the extension portion and extended from the piezoelectric portion at an incline depending on a shape of the insertion layer.

Acoustic resonator and method of manufacturing the same

A bulk acoustic wave resonator includes: a support part disposed on a substrate; a layer disposed on the support part, wherein an air cavity is formed between the support part, the substrate and the layer; and a frame extending along the layer, within the air cavity, and spaced apart from the support part.

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Suwon-si, South Korea

Sang Kee Yoon