Other

Lg Semicon Co., Ltd.

Vault Creation Co., Ltd.

Samsung Electronics Co., Ltd.

Olas Co., Ltd.

Keepin Co., Ltd.

Sang Jun Choi

Ji Sung Kang

Jeong Soo Byun

Kyung Jin Lee

Chang-ki Hong

Jeong-Nam Han

Woo-Gwan Shim

Woo-Sung Han

Jin Sub Kim

Yun Jun Huh

Suk Bin Han

Byung Jo Kang

Wanuk Kim

Provided is an anti-reflective hardmask composition including: (a) a polymer composed of an indolocarbazole represented by the following Chemical Formula 1 or a polymeric blend containing the same; and (b) an organic solvent. 

Anti-reflective hardmask composition

The present invention relates to a dry etching apparatus which can be applied regardless of materials. The dry etching apparatus may include: an anode unit; a cathode unit configured to receive a bidirectional voltage source of which the voltage polarity alternates between a positive voltage and a negative voltage with time, and separated from the anode unit; a positioning unit configured to position a work piece at a surface of the cathode unit, facing the anode unit; and a bidirectional voltage source supply unit configured to apply the bidirectional voltage source to the cathode unit.

Dry etching apparatus

A dry etching device which can be used to etch products or used in processes regardless of materials and exhibits an excellent accuracy, and a method for controlling the same. The dry etching device includes: an anode part; a cathode part disposed at an upper side of the anode part and facing the anode part, receiving bi-directional voltage power in which polarity of a voltage alternates between a positive voltage and a negative voltage depending on time, and spaced apart from the anode part; a leveling part disposed in close contact with a surface of the cathode part facing the anode part, and for positioning a work-piece in a flat state; a holding part for holding the work-piece and the leveling part to the surface of the cathode part facing the anode part; and a bi-directional voltage power supplier for applying the bi-directional voltage power to the cathode part.

Dry etching device and method for controlling same

The present invention determines whether a fire or disaster has occurred in various fields based on voices in an exigency situation and surrounding environmental sounds, and automatically transmits an alarm, so that it can detect the occurrence of a disaster rapidly and accurately. The system of the present invention is installed in a building or is provided as a program of a computer or an application of a smartphone, so that the installation and maintenance of the system are simple.

Emergency and exigency situation notification system

An anti-reflective hardmask composition contains: (a) an arylcarbazole derivative polymer represented by the following Chemical Formula 1 or a polymer blend containing the same; and (b) an organic solvent  in Chemical Formula 1, Aand Aare each independently a (C-C) aromatic aryl group and are the same as or different from each other, R is t-butyloxycarbonyl (t-BOC), ethoxyethyl, isopropyloxyethyl, or tetrahydropyranyl, Xand Xare each a polymerization linkage group derived from aldehyde or an aldehyde acetal monomer capable of being one-to-one polymerized with an arylcarbazole derivative and Ain the presence of an acid catalyst, m/(m+n) is in a range of 0.05 to 0.8, and a weight average molecular weight (Mw) of an the polymer is in a range of 1,000 to 30,000.

The present invention relates to a control method of a dry etching apparatus which can be applied regardless of materials. The control method of a dry etching apparatus may include: a work piece positioning step of positioning a work piece close to a surface of a cathode unit, facing an anode unit; a bidirectional voltage source applying step of applying a voltage to the cathode unit, the voltage having a polarity alternating between a positive voltage and a negative voltage with time; and an etching step of etching the surface of the work piece using plasma generated by the bidirectional voltage source applied to the cathode unit.

Control method of dry etching apparatus

An anti-reflective hardmask composition is provided. In an exemplary embodiment, the anti-reflective hardmask composition includes (a) a carbazole derivative polymer represented by the following Formula 1 or a polymer blend comprising the carbazole derivative polymer, and (b) an organic solvent: 

Composition of anti-reflective hardmask

A mobile phone system having an application processing function is physically separated into a network data processing device and an application data processing device. Here, the network data processing device configured to process data for voice calls and data calls is placed in one small and light-weight device, the application data processing device configured to perform a high-quality user interface and high-quality applications is placed in another device, and communication between the two devices is defined.

Distributed mobile phone system

Disclosed is an image projecting apparatus having a cooling device, which cools heat generated from a plurality of light sources respectively emitting light of different colors and heat generated from a display device simultaneously, while effectively dispersing the heat. The image projecting apparatus includes a projecting system which projects light; a display device disposed in series with the projecting system; an optical system disposed in parallel with the projecting system, and including a plurality of light sources which transmit the light to the display device and generate heat when the light is transmitted to the display device; a heat dissipation device disposed at an outer edge of the optical system which dissipates the heat generated from the plurality of light sources; and a cooling fan disposed opposite to the display device, which inhales air and discharges the air to the heat dissipation device.

Image projecting apparatus

A method of manufacturing a semiconductor device using a polysilicon layer as an etching mask includes: (a) forming an interlayer dielectric over a semiconductor substrate; (b) forming a polysilicon layer pattern over the interlayer dielectric; (c) forming a contact hole in the interlayer dielectric by etching the interlayer dielectric using the polysilicon layer pattern as an etching mask; (d) removing the polysilicon layer pattern by an etching process that has a large etching selectivity of the polisilicon layer with respect to the interlayer dielectric and about 3% or less etching uniformity; and (e) forming a contact by filling the contact hole with a conductive material.

Method of manufacturing a semiconductor device using a polysilicon etching mask

A wet-etch method which determines a desired etch-ending point includes the steps of providing an etchant solution in a bath, perform a wet-etch process by dipping a material to be etched in the bath, measuring a PH variation value of the etchant solution during the wet-etch process, calculating a thickness variation value of the material by using the measured PH variation value, and stopping the wet-etch process when the thickness variation value reaches a preset value.

Etch-ending point measuring method for wet-etch process

A method for fabricating an MOS transistor includes the steps of forming a gate insulating layer on a substrate of a first conductivity-type, forming a gate on the gate insulating layer, forming a disposable layer over an entire surface of the substrate and the gate, the disposable layer having a first conductivity-type impurity and a second conductivity-type impurity of a higher concentration than that of the first conductivity-type impurity, and forming a source and drain area of the second conductivity-type impurity on the substrate by diffusing the second conductivity-type impurity of the disposable layer into the substrate by means of an annealing process, wherein the disposable layer includes a BPSG layer, wherein the BPSG layer is a B+PSG layer which is doped with a higher dopant concentration of boron than that of phosphorus to make a p-type MOS transistor.

Method for fabricating MOS transistor utilizing doped disposable layer

A method for fabricating an MOS transistor includes the steps of forming a gate insulating layer on a substrate of a first conductivity-type, forming a gate on the gate insulating layer, forming a disposable layer over an entire surface of the substrate and the gate, the disposable layer having a first conductivity-type impurity and a second conductivity-type impurity of a higher concentration than that of the first conductivity-type impurity, and forming a source and drain area of the second conductivity-type impurity on the substrate by diffusing the second conductivity-type impurity of the disposable layer into the substrate by means of an annealing process, wherein the disposable layer includes a BPSG layer.

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Seoul, South Korea

Sang Jun Choi