Samsung Electronics Co., Ltd.

Cheil Industries Inc.

Sang-jun Choi

Chang-ki Hong

Sang-gyun Woo

Si-hyeung Lee

Dong-won Jung

Sook Jin Lee

Chun-geun Park

Kwang-sub Yoon

Woo-Gwan Shim

Hyun-woo Kim

Sang-Yong Kim

Joo-tae Moon

Young-bum Koh

Man-hyoung Ryoo

Hyun-Woo Kim

Han-Ku Cho

Yool Kang

Sang-Gyun Woo

Jeong-Nam Han

Jung-hwan Hah

Kyoung-seon Kim

Sung-min Chi

Mitsuhiro Hata

Won-Sun Kim

Hyung-Ho Ko

Ki-Yong Song

Ki-young Kwon

Hyo-San Lee

Woo-Sung Han

Ji-Hoon Cha

Youn-Jin Cho

Dong-joon Ma

Chang-Sup Mun

Jeong-hee Chung

Young-eal Kim

Seung-Wook Shin

Dong-Won Jung

Hye-Won Kim

Jung-Hyun Lee

Wan-jun Park

Young-Soo Park

Ki-Hong Kim

Jung-Min Oh

Chang-Ki Hong

Jung-min Oh

Dae-Hyuk Kang

Dong-Gyun Han

Sang-yong Kim

Si-Hyeung Lee

Yu-Kyung Kim

Woo-young Yang

Doo-Won Kwon

Young-mi Lee

Joo-Tae Moon

Woo-sung Han

Seong-yong Park

Hung-ho Ko

Chang-Sup Min

Si-hyueng Lee

Hai-won Lee

Jung-Hwan Hah

Sung-Min Chi

Kyoung-Seon Kim

A transistor includes a channel forming layer on a substrate, a gate on the channel forming layer and including an electrochemically indifferent metal, a solid electrolyte layer between the channel forming layer and the gate, the solid electrolyte layer is formed as a stack structure with the gate on the channel forming layer, an active metal layer including an electrochemically active metal capable of enabling channel switching by using an oxidation-reduction reaction of the electrochemically active metal so that the active metal layer forms a metal channel in a channel region between the channel forming layer and the solid electrolyte layer, and a source and a drain electrically connected to the active metal layer.

Transistor and method of operating same

A transistor having a metal nitride layer pattern, etchant and methods of forming the same is provided. A gate insulating layer and/or a metal nitride layer may be formed on a semiconductor substrate. A mask layer may be formed on the metal nitride layer. Using the mask layer as an etching mask, an etching process may be performed on the metal nitride layer, forming the metal nitride layer pattern. An etchant, which may have an oxidizing agent, a chelate agent and/or a pH adjusting mixture, may perform the etching. The methods may reduce etching damage to a gate insulating layer under the metal nitride layer pattern during the formation of a transistor.

Transistor having a metal nitride layer pattern, etchant and methods of forming the same

An oligomer probe array having improved reaction yield is provided. The oligomer probe array includes a substrate, an immobilization layer on the substrate, a plurality of nano particles coupled with a surface of the immobilization layer, and a plurality of oligomer probes coupled with surfaces of the nano particles.

Oligomer probe array and method of producing the same

The present invention provides etchant solutions including deionized water and an organic acid having a carboxyl radical and a hydroxyl radical. Methods of forming magnetic memory devices are also disclosed.

Methods of forming semiconductor devices formed by processes including the use of specific etchant solutions

A photosensitive polymer, the photosensitive polymer including repeating units represented by Formulae 1 to 3: wherein Rand Rare independently hydrogen or methyl, Ris a C4 to C20 acid-labile group, Ris a lactone-derived group, AR is a substituted or unsubstituted phenyl ring, or a substituted or unsubstituted aryl having from two to three fused aromatic rings, carbon Cis bonded directly to an aromatic ring of AR, l, m, and n are positive integers, l/(l+m+n) is about 0.1 to about 0.5, m/(l+m+n) is about 0.3 to about 0.5, and n/(l+m+n) is about 0.1 to 0.4.

Photosensitive polymer, resist composition, and associated methods

A (meth)acrylate compound having an aromatic acid-labile group, the (meth)acrylate compound being represented by the following Formula 1: In Formula I, Ris hydrogen or methyl, Ris hydrogen, a substituted or unsubstituted alkyl, or a substituted or unsubstituted aryl, Ris hydrogen, a substituted or unsubstituted alkyl, or a substituted or unsubstituted aryl, AR is a substituted or unsubstituted phenyl, or a substituted or unsubstituted aryl having from two to four fused aromatic rings, and carbon Cis bonded directly to an aromatic ring of AR.

(Meth)acrylate compound having aromatic acid labile group, photosensitive polymer, resist composition, and associated methods

A non-linear silicon compound is provided. The non-linear silicon compound may be a non-linear aromatic compound used as a linker for manufacturing an oligomer probe array. The non-linear silicon compound may reduce self-aggregation so as to form a stable and uniform monolayer. As a result, upon hybridization analysis, the fluorescent intensity may be increased.

Non-linear silicon compound, method of manufacturing oligomer probe array using the same, substrate for oligomer probe array with the same, and oligomer probe array with the same

A wet-etch composition may include: peracetic acid (PAA); and a fluorinated acid; a relative amount of the PAA in the composition being sufficient to ensure an etch rate of (P-doped-SiGe):(P-doped-Si) that is substantially the same as an etch rate of (N-doped-SiGe):(N-doped-Si). Such a wet-etch composition is hereafter referred to as a PAA-based etchant and can be used to make, e.g., a CMOS MBCFET, an electrode of a capacitor, etc.

PAA-based etchant, methods of using same, and resultant structures

A polymer, a top coating layer, a top coating composition and an immersion lithography process using the same are disclosed. The top coating layer polymer may include a deuterated carboxyl group having a desired acidity such that the top coating layer polymer may be insoluble with water and a photoresist, and soluble in a developer. The polymer may be included in a top coating layer and a top coating composition.

Polymer, top coating layer, top coating composition and immersion lithography process using the same

A photosensitive polymer for a photoresist and a photoresist composition having the same are provided. The photosensitive polymer for a photoresist includes the repeating unit represented by the formula below: wherein Ris a C-Chydrocarbon group or a C-Chetero hydrocarbon group including at least one hetero atom selected from the group consisting of nitrogen, fluorine and sulfur.

Photosensitive polymer and photoresist composition having the same

A polymer, a top coating layer, a top coating composition and an immersion lithography process using the same are provided. The polymer used as a top coating layer covering (or formed on) a photoresist may include a specific chemical structure. The top coating composition may include a solvent and a polymer of having the specific chemical structure. The immersion lithography process includes forming a photoresist layer on a wafer, forming a top coating layer on the photoresist layer, immersing the wafer in water, performing an exposure process on the photoresist layer and forming a photoresist pattern by removing the top coating layer and the photoresist layer with a developer.

Provided is a substrate for an oligomer probe array to which a photolabile material having an acetylene derivative is directly attached or attached via a linker.

Photolabile compound and substrate for oligomer probe array with the same

A cleaning method for removing foreign bodies during the fabrication of semiconductor devices including treating a substrate with a cleaning solution including an oxidizer to form a chemical oxide layer and then removing the chemical oxide layer, thereby removing foreign bodies from a surface of the semiconductor substrate. Accordingly, the foreign bodies can be substantially removed from the surface of the substrate without corroding a metal.

Cleaning solution and cleaning method of a semiconductor device

In one embodiment, a semiconductor device comprises a base and a tapered wall formed on the base. The wall has a midline and also has an inner sidewall and an outer sidewall. The inner sidewall and the outer sidewall are substantially symmetrical with each other in relation to the midline. Thus, the reliability of the semiconductor capacitor structure can be improved and the throughput can be increased. Also, further scaling down of semiconductor devices can be facilitated with the principles of the present invention.

Semiconductor capacitor structure and method for manufacturing the same

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Seoul, South Korea

Sang-jun Choi