Samsung Electronics Co., Ltd.

Sang Joon Yoon

Ha Na Kim

Yong Hyun Kwon

Dae Hyun Jang

Seung Jae Jung

A method of manufacturing a semiconductor device includes alternately stacking mold insulating layers and sacrificial layers on a substrate; forming channel holes penetrating through the mold insulating layers and the sacrificial layers and allowing recessed regions to be formed in the substrate; cleaning a surface of the recessed regions in such a manner that processes of forming a first protective layer in an upper region of the channel holes and performing an anisotropic dry etching process on the recessed regions in a lower portion of the channel holes are alternately repeated one or more times, in-situ; and forming epitaxial layers on the recessed regions of the substrate.

Growing community of inventors

Yongin-si, South Korea

Sang Joon Yoon