Wonik Ips Co., Ltd.

Sang Jin Lee

Sang Jun Park

Byung Chul Cho

Kwang Seon Jin

In Hwan Yi

Tae Ho Jeon

Chang Hee Han

Tae Ho Kim

Provided is a method for forming a thin film. The method for forming the thin film includes forming a first thin film having a first thickness with first crystallinity through an atomic layer deposition process and etching the first thin film by a predetermined thickness through an atomic layer etching process with respect to the first thin film to form a second thin film having a second thickness less than the first thickness.

Method for forming thin film

In a method of deposition a thin film, a substrate having a pattern may be provided. A surface of the substrate may be treated using a deposition-suppressing gas to form a deposition-suppressing layer on the pattern. A process gas may be applied to the pattern to deposit the thin film. The deposition-suppressing gas may include fluorine.

Method of depositing a thin film

Growing community of inventors

Pyeongtaek-si, South Korea

Sang Jin Lee