Samsung Electronics Co., Ltd.

Sang-jeong Oh

Seung-Hwan Lee

Young-wook Park

Dong-Chan Kim

Yeong-kwan Kim

The present invention provides integrated circuit devices that include a semiconductor substrate having a semiconductor region of first conductivity type therein extending adjacent the surface of the substrate. The device further includes an electrically insulating layer with a contact hole in it that exposes the semiconductor region of first conductivity type on the surface of the semiconductor substrate. The device still further includes a poly-SiGeconductive plug of first conductivity type that extends in the contact hole and is electrically connected to the semiconductor region of first conductivity type is provided. Related methods of fabricating integrated circuit devices are also provided.

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The present invention provides an integrated circuit device that include a semiconductor substrate having a semiconductor region of first conductivity type therein extending adjacent the surface of the substrate. The device further includes an electrically insulating layer with a contact hole in it that exposes the semiconductor region of first conductivity type on the surface of the semiconductor substrate. The device still further includes a poly-Si Ge conductive plug of first conductivity type that extends in the contact hole and is electrically connected to the semiconductor region of first conductivity type is provided.

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Seoul, South Korea

Sang-jeong Oh