Samsung Electronics Co., Ltd.

Sang Jean Jeon

Sang Heon Lee

Hyung Joon Kim

Young Min Park

Jung Hyun Cho

Jeong Yun Lee

Yuri Nikolaevich Tolmachev

Kyung Yub Jeon

Vasily Pashkovskiy

Won Hyuk Jang

Guen Suk Lee

Su Ho Lee

Chin Wook Chung

Seoung Hyun Seok

Seung Yuop Sa

Hyung Chul Cho

A method of operating a plasma processing device includes outputting a first RF power having a first frequency and a first duty ratio, and outputting a second RF power having a second frequency higher than the first frequency and a second duty ratio smaller than the first duty ratio. The outputting of the first RF power and the outputting of the second RF power are synchronized with each other.

Method of plasma processing and apparatuses using the method

A substrate processing apparatus. The substrate processing apparatus includes a vacuum chamber having a reaction space to generate plasma in which a target substrate is located, a low frequency antenna unit located outside the reaction space to generate plasma in the reaction space, a low frequency power supply to apply low frequency power to the low frequency antenna unit, a high frequency antenna unit located outside the reaction space to generate plasma in the reaction space, and a high frequency power supply to apply high frequency power to the high frequency antenna unit. The apparatus allows the ignition of plasma to be performed efficiently via the high frequency antenna unit, and improves efficiency of inductive coupling between plasma and a low frequency antenna via the low frequency antenna unit, thereby improving plasma generation efficiency.

Substrate processing apparatus

A plasma generating apparatus having superior plasma generation efficiency that uses a single reaction chamber. The plasma generating apparatus includes a RF generator for providing a RF power, an antenna for generating an electromagnetic field upon receiving the RF power, a reaction chamber for exciting/ionizing a reaction gas via the electromagnetic field, and generating a plasma, and a plasma channel for absorbing the RF power, and allowing a current signal to be induced to the plasma.

Plasma generating apparatus

Growing community of inventors

Hwaseong-si, South Korea

Sang Jean Jeon