Applied Materials, Inc.

Sang In Yi

Kelvin Chan

Alexandros T Demos

Paul Brillhart

Thomas E Nowak

Richard Charles Fovell

Kang Sub Yim

Yi Zheng

Padmapani Nallan

Anisul Haque Khan

Nagarajan Rajagopalan

Shashank C Deshmukh

Sang H Ahn

Jinhan Choi

Shane C Nevil

Kenlin Huang

Kyeong-Tae Lee

Vu Ngoc Tran Nguyen

Jivko Dinev

Josephine Ju-Hwei Chang Liu

Seowoo Nam

A method for cleaning a substrate processing chamber, including processing a batch of substrates within a processing chamber defining one or more processing regions. Processing the batch of substrates may be executed in a sub-routine having various sub-steps including processing a substrate from the batch within the processing chamber, removing the substrate from the processing chamber, introducing ozone into the processing chamber, and exposing the chamber to ultraviolet light for less than one minute. The substrate batch processing sub-steps may be repeated until the last substrate in the batch is processed. After processing the last substrate in the batch, the method includes removing the last substrate from the processing chamber, introducing ozone into the processing chamber; and exposing the processing chamber to ultraviolet light for three to fifteen minutes.

Superimposition of rapid periodic and extensive post multiple substrate UV-ozone clean sequences for high throughput and stable substrate to substrate performance

Apparatus for controlling the temperature of a substrate support may include a first heat transfer loop and a second heat transfer loop. The first heat transfer loop may have a first bath with a first heat transfer fluid at a first temperature. The second heat transfer loop may have a second bath with a second heat transfer fluid at a second temperature. The first and second temperatures may be the same or different. First and second flow controllers may be provided for respectively providing the first and second heat transfer fluids to a substrate support. One or more return lines may couple one or more outlets of the substrate support to the first and second baths for returning the first and second heat transfer fluids to the first and second baths.

Substrate support temperature control

A method of etching metals and/or metal-containing compounds using a plasma comprising a bromine-containing gas. In one embodiment, the method is used during fabrication of a gate structure of a field effect transistor having a titanium nitride gate electrode, an ultra-thin (about 10 to 20 Angstroms) silicon dioxide gate dielectric, and a polysilicon upper contact. In a further embodiment, the gate electrode is selectively notched to a pre-determined width.

Method of fabricating a gate structure of a field effect transistor having a metal-containing gate electrode

A method for depositing a low dielectric constant film is provided by positioning a substrate within a processing chamber having a powered electrode, and flowing into the processing chamber an initiation gas mixture of a flow rate of one or more organosilicon compounds and a flow rate of one or more oxidizing gases to deposit an initiation layer by applying an RF power to the electrode. The organosilicon compound flow rate is then ramped-up to a final flow rate to deposit a first transition layer, upon which one or more porogen compounds is introduced and the flow rate porogen compound is ramped up to a final deposition rate while depositing a second transition layer. A porogen doped silicon oxide layer is then deposited by flowing the final porogen and organosilicon flow rates until the RF power is turned off.

Method to reduce gas-phase reactions in a PECVD process with silicon and organic precursors to deposit defect-free initial layers

One embodiment of the present invention is a method used to fabricate a device on a substrate, which method is utilized at a stage of processing wherein a metal gate stack is disposed or formed over a gate oxide, which metal stack includes a refractory metal layer disposed or formed over a refractory metal barrier/adhesion layer, which method includes steps of: (a) etching the refractory metal layer and stopping on or in the refractory metal barrier/adhesion layer; and (b) etching the refractory metal barrier/adhesion layer using a passivation etching chemistry without oxygen.

Methods used in fabricating gates in integrated circuit device structures

Growing community of inventors

Sunnyvale, CA, United States of America

Sang In Yi