Samsung Electronics Co., Ltd.

Sang-In Lee

Seung-wook Jeong

Min-chul Kim

Naoto Fukasawa

Jong-Kyu Kim

Deok-Sang Yun

Min-Kyung Choi

Jae-Ho Jang

Min Kyung Choi

Cheol-Yeon Jo

Yu-Na Park

Yea-Seul You

Sang-Bom Kang

Jin-Won Kim

Yong-Ho Lee

Seung-Mok Lee

Zi-On Kwon

Eun-Chul Kim

Kyoung-Han Lee

Jee-Hye Kim

Cheal-Seong Hwang

Cover for air purifier

Remote controller

Air purifier

Case for a printer

Docking keyboard

Printer

An apparatus and method for obtaining information on Bluetooth devices in a computing device using Bluetooth are provided. The method includes, if an Inquiry Response (IR) packet is received as a response to an inquiry packet, obtaining information on a first Bluetooth device transmitting the IR packet and determining whether a supplementary response indication field is enabled and, if the supplementary response indication field is enabled, receiving an Extended Inquiry Response (EIR) packet, and obtaining information on at least one Bluetooth device other than the first Bluetooth device through the EIR packet.

Apparatus and method for obtaining information on bluetooth devices in a computing device using bluetooth

A performance test system includes a measuring device to measure an object device, and a computing device having a controller to test performance of the object device based on measured data transmitted from the measuring device, wherein the controller controls to display a report setup window through which data to be reflected in a measurement report is inputted, a coordinate-system setup window through which a coordinate system is set up based on the object device, and a measuring option setup window through which options for measuring the performance of the object device are set up, controls operation of the measuring device and the object device based on the options set up through the measuring option setup window, and tests the performance of the object device based on the measured data transmitted from the measuring device according to the operation of the object device and the measuring device, and controls to display a report window to process and to output report data inputted through the report setup window and the measured data transmitted from the measuring device. The present invention provides a performance measurement system, in which performance of an object device is measured, the performance measurement is reported with measured data and various report data, and an interface convenient for a user is provided.

Performance measurement system

A method and an apparatus of fabricating a metal interconnection in a contact hole of a semiconductor device reduces contact resistance and improves step coverage. A contact hole is opened in an interlayer insulating film formed on a semiconductor substrate. A conductive layer used as an ohmic contact layer is formed on the interlayer insulating film including the contact hole. An upper surface of the conductive layer is nitrided to form a protective layer. An ALD (atomic layer deposition)-metal barrier layer is formed on the protective layer. The resulting metal barrier layer has good step coverage and no impurities, and the protective layer prevents defects in the conductive layer caused by precursor impurities used during the formation of the metal barrier layer.

Method of and apparatus for forming a metal interconnection in the

A method for forming a dynamic random access memory device includes the step of forming a memory cell access transistor on a semiconductor substrate wherein the memory cell access transistor includes a source/drain region at a surface of the semiconductor substrate. An insulating layer is formed on the semiconductor substrate and on the memory cell access transistor wherein the insulating layer has a contact hole therein exposing a portion of the source/drain region of the substrate. A first conductive layer is chemical vapor deposited on the exposed portion of the source/drain region of the substrate, and a second conductive layer is physical vapor deposited on the first conductive layer opposite the substrate. A dielectric layer is formed on the second conductive layer opposite the substrate, and a third conductive layer is formed on the dielectric layer opposite the substrate.

Dual deposition methods for forming contact metallizations, capacitors,

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Suwon-si, South Korea

Sang-In Lee