Samsung Electronics Co., Ltd.

Osong Medical Innovation Foundation, Korea University Research and Business Foundation

Sang-il Kim

Kyu-hyoung Lee

Sang-mock Lee

Sung-woo Hwang

Kyung-han Ahn

Jong Wook Roh

Jong-soo Rhyee

Bum-Joon Kim

Weon-ho Shin

Jung-Geun Jhin

Dong-Jin Byun

Roman Mochernyuk

Dae-jin Yang

Sam-Seok Jang

Vilius Mykhailovsky

Do-Han Lee

A thermoelectric device including: a thermoelectric material layer comprising a thermoelectric material; a transition layer on the thermoelectric material; and a diffusion prevention layer on the transition layer, wherein the thermoelectric material comprises a compound of Formula 1:(AA')(BB&#x2032;)C&#x2003;&#x2003;Formula 1wherein A and A&#x2032; are different from each other, A is a Group 13 element, and A&#x2032; is at least one element of a Group 13 element, a Group 14 element, a rare-earth element, or a transition metal, B and B&#x2032; are different from each other, B is a Group 16 element, and B&#x2032; is at least one element of a Group 14 element, a Group 15 element, or a Group 16 element, C is at least one halogen atom, a complies with the inequality 0&#x2264;a&#x3c;1, b complies with the inequality 0&#x2264;b&#x3c;1, x complies with the inequality &#x2212;1&#x3c;x&#x3c;1, y complies with the inequality &#x2212;1&#x3c;y&#x3c;1, and z complies with 0&#x2264;z&#x3c;0.5.

Thermoelectric device, thermoelectric module including the thermoelectric device, thermoelectric apparatus including the thermoelectric module, and method of manufacturing the same

A composite thermoelectric material comprising a matrix comprising a thermoelectric semiconductor; and a nanoscale heterophase dispersed in the matrix, wherein the thermoelectric semiconductor comprises an element belonging to Group 15 of the Periodic Table of the Elements, and the heterophase comprises a transition metal element.

Composite thermoelectric material, thermoelectric element and module including the same, and preparation method thereof

A thermoelectric material including a thermoelectric matrix; and nano-inclusions in the thermoelectric matrix, the nano-inclusions having an average particle diameter of about 10 nanometers to about 30 nanometers.

Thermoelectric material including nano-inclusions, thermoelectric module and thermoelectric apparatus including the same

A thermoelectric material including: a thermoelectric matrix; and a plurality of metal nanoparticles disposed in the thermoelectric matrix, wherein a difference between a work function of thermoelectric matrix and a work function of a metal particle of the metal nanoparticles is about &#x2212;1.0 electron volt to about 1.0 electron volt.

Nano-complex thermoelectric material, and thermoelectric module and thermoelectric apparatus including the same

A thermoelectric material including: a thermoelectric matrix including grains with a composition of Formula 1:(BiSb)(TeSe)&#x2003;&#x2003;Formula 1wherein 1.8&#x2266;a&#x2266;2.2, 2.8&#x2266;b&#x2266;3.2, 0&#x2266;x&#x2266;1, and 0&#x2266;y&#x2266;1, and wherein a plurality of dislocations is present along a grain boundary between adjacent grains of the composition of Formula 1.

Thermoelectric material having reduced thermal conductivity, and thermoelectric device and module including the same

A thermoelectric material includes powders having a surface coated with an inorganic material. The thermoelectric material includes a thermoelectric semiconductor powder and a coating layer on an outer surface of the thermoelectric semiconductor powders.

Thermoelectric material including coating layers, method of preparing the thermoelectric material, and thermoelectric device including the thermoelectric material

A thermoelectric material includes a compound represented by Formula 1:ARG&#x2003;&#x2003;Formula 1wherein component A includes at least one element selected from a Group 1 element, a Group 2 element, and a metal of Groups 3 to 12, component R is a rare-earth element, component G includes at least one element selected from sulfur (S), selenium (Se), tellurium (Te), phosphorus (P), arsenic (As), antimony (Sb), bismuth (Bi), carbon (C), silicon (Si), germanium (Ge), tin (Sn), boron (B), aluminum (Al), gallium (Ga), and indium (In), 0&#x3c;a&#x2266;1, 0&#x3c;b&#x2266;1, and 0&#x2266;n&#x3c;1.

Thermoelectric material, and thermoelectric module and thermoelectric device including the thermoelectric material

Disclosed is a method of removing a photoresist pattern, which includes radiating light onto a substrate having a photoresist pattern formed thereon and implanted with a predetermined dopant so that the temperature of the substrate is increased to be equal to or higher than a temperature able to remove the photoresist pattern, and by which the photoresist pattern formed on the substrate can be almost completely removed using a simple process for radiating light onto the substrate so that the temperature of the substrate is increased to be equal to or higher than a temperature able to the photoresist pattern.

Method for removing photoresist pattern

An LCD panel that provides improved image quality by preventing light leakage and maintaining constant cell gap is provided, along with a method of making the LCD panel. The LCD panel includes a first member that has a column spacer, a second member that is positioned substantially parallel to the first member, and a polymer layer disposed between the column spacer and the second member. The polymer layer combines the column spacer with the second member. A liquid crystal layer is disposed between the first member and the second member.

Liquid crystal display panel having a constant cell gap and method of making the same

An LCD includes a first substrate, a transparent electrode formed on the first substrate, a coupling electrode connected to the transparent electrode, a reflective electrode formed on the first substrate and separated from the transparent electrode, an auxiliary electrode formed on the first substrate and connected to the reflective electrode where the auxiliary electrode overlaps the coupling electrode with an interposing dielectric layer, a second substrate facing the first substrate, and a protrusion formed on the second substrate. The LCD utilizes the protrusion formed at a reflective area and an auxiliary capacitor connected to a reflective capacitor in series to accord compatible reflectance and transmittance curves for the reflection area and the transmission area having the same cell gaps. As a result, the light efficiency of the LCD becomes higher and the viewing angle of the LCD becomes wider.

Growing community of inventors

Seoul, South Korea

Sang-il Kim