Hyundai Electronics Industries Co. Ltd.

Sang I Kim

Hae Sung Park

Sea C Kim

Jin Gyeong Park

Sang Hoon Park

Sung Kee Park

Young Chul Lee

Kye Shin Park

Yung M Koo

Chung G Choi

Young I Kim

Hyung Sun Yook

Hyun Chul Baek

Il S Hyun

Ho G Ryoo

Jai O Koh

Dong W Baik

A method for forming a field oxide film in a semiconductor device comprises the steps of sequentially forming a pad oxide film and a first buffer silicon nitride film on a silicon substrate, and then forming a first patterned mask on the first buffer silicon nitride film. Subsequently, the resulting exposed part of the first buffer silicon nitride film is etched to expose a portion of the pad oxide film. The first patterned mask is them removed. A buffer oxide film is formed on the resulting exposed part of the pad oxide film and the etched first buffer silicon nitride film. Then, a second buffer silicon nitride film and a second patterned mask is sequentially formed on the buffer oxide film, followed by etching of the resulting exposed part of the second buffer silicon nitride. The second patterned mask is then removed, followed by a formation of a field oxide film by thermal oxidation on the resulting structure. The second buffer silicon nitride is then removed. A bird's beak removal mask is then formed on the field oxide film, followed by removal of a portion of a bird's beak. The bird's beak removal mask, the first buffer silicon nitride, and the pad oxide are sequentially removed. The present invention can minimize the size of the bird's beak generated when the field oxide film is formed on the semiconductor substrate by using a triple buffer (Nitride/Oxide/Nitride).

Method for forming a field oxide film in a semiconductor device

A method for removing residual material which remains in a cavity after an anisotropic etching process in the manufacture of a partially completed multi-layer semiconductor device, where the cavity is in contact with at least one anisotropic etch-stop layer and is accessible by an etchable layer is disclosed. A plasma etching apparatus which includes a chamber is utilized. The etchable layer is first etched by anisotropic etching in the chamber under predetermined conditions in the plasma etching apparatus until a top of the etch-stop layer is exposed. A plasma scattering etching process is then performed to remove the residual material in the cavity by changing the predetermined conditions of the anisotropic etching process to produce plasma scattering, thereby removing the residual material from the cavity.

Method for removing residual material from a cavity during the

A method for curing spin-on-glass formed on a wafer film which insulates the metal layers and flattens any step difference in the process for manufacturing a multi-layered metal layer of a highly integrated semiconductor device which comprises establishing a predetermined initial temperature in a heating chamber with an ultraviolet light source. A wafer, on which a SOG film to be cured is formed, is then introdued into the heated chamber and the temperature gradually increased to a predetermined maximum temperature. The SOG film is irradiated with ultraviolet light at a predetermined wavelength simultaneously with the application of heat at the maximum temperature for a predetermined time. The wafer is then cooled.

Method for curing spin-on-glass film by utilizing ultraviolet irradiation

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Seoul, South Korea

Sang I Kim