Samsung Electro-mechanics Co., Ltd.

Sang Hyun Yi

Yong Suk Kim

Chang Hyun Lim

Sung Jun Lee

Jae Hyoung Gil

Dong Hyun Park

Moon Chul Lee

Dong Woo Lee

Hwa Sun Lee

Jin Suk Son

Yeong Gyu Lee

Ho Joon Park

Jeong Suong Yang

Je Hong Kyoung

Bo Sung Ku

A bulk acoustic resonator includes: a substrate; a first electrode disposed on the substrate; a piezoelectric layer disposed to cover at least a portion of the first electrode; a second electrode disposed to cover at least a portion of the piezoelectric layer; a metal pad connected to the first electrode and the second electrode; and a protective layer disposed to cover at least the metal pad.

Bulk acoustic resonator

A bulk acoustic wave resonator includes a substrate; a lower electrode disposed on the substrate; a piezoelectric layer disposed to cover at least a portion of the lower electrode; an upper electrode disposed to cover at least a portion of the piezoelectric layer; and a passivation layer disposed to cover at least a portion of the upper electrode, wherein the passivation layer includes a non-trimming-processed portion disposed outside an active region of the bulk acoustic wave resonator in which portions of the lower electrode, the piezoelectric layer, and the upper electrode overlap, and having a thickness that is thicker than a thickness of a portion of the passivation layer disposed in the active region.

Bulk acoustic wave resonator and method of manufacturing the same

An acoustic resonator includes a substrate having via holes provided therein and having a membrane structure formed on a first surface of the substrate, and a cap accommodating the membrane structure and bonded to the substrate. The cap includes a support block in contact with the membrane structure.

Acoustic resonator and method for manufacturing the same

A bulk acoustic wave resonator includes a substrate protective layer disposed on a top surface of a substrate, a cavity defined by a membrane layer and the substrate, and a resonating part disposed on the membrane layer. The membrane layer includes a first layer and a second layer, the second layer having the same material as the first layer and having a density greater than that of the first layer.

Bulk acoustic wave resonator and method for manufacturing the same

A bulk acoustic wave filter includes a substrate, a first electrode and a second electrode disposed on the substrate, a piezoelectric layer including a piezoelectric material, the piezoelectric layer disposed between the first and second electrodes, and a passive element disposed on one surface of a housing. The housing is coupled to the substrate to accommodate the piezoelectric layer, the first electrode and the second electrode.

Bulk acoustic wave filter

Disclosed herein are a cell chip and a method for manufacturing the same. The cell chip may include: a substrate; and a first contact member disposed on the substrate, wherein a top end of the first contact member is provided with a first inclined contact surface inclined with respect to the substrate.

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Suwon-si, South Korea

Sang Hyun Yi