Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Lg Display Co., Ltd.

Samsung Sdi Co., Inc.

Other

Samsung Mobile Display Co., Ltd.

Fairchild Korea Semiconductor Ltd.

Hynix Semiconductor Inc.

Mbd Co., Ltd.

R.f. Tech Co., Ltd.

Lg Electronics Inc.

Sang-Hyun Lee

Hyun-Seok Kim

Hi-Kuk Lee

Ki-beom Lee

Jung-In Park

Sang-Hyun Yun

Sung-woo Kang

Young-Mook Oh

In-Keun Lee

Kab-Jong Seo

Jun-Ho Sim

Won-Taek Moon

Jung-Chul Heo

Jae-Hyuk Chang

Chang-Hoon Kim

Su-Jin Chang

Jong-Woon Kim

Hak-yoon Ahn

Seong-han Oh

Hyun-Soo Kim

Sung-Jin Kim

Jae-Bong Chun

Jong-Chul Park

Seong-deok Hwang

Woo-Kwang Lee

Hwi-Chan Jun

Tae-Won Jeong

Hong-sik Shin

Byoung-Ku Kim

Sang-Dae Han

Bo-Ra Kim

Seul-Ki Hong

Sang-Bum Han

Gam-han Yong

Yeon-Jung Kim

Kyung-Tak Hur

Min-Soo Kim

Jae-Hyun Park

Tae-Hoon Kim

Young-Sun Shin

Min-Cheol Kim

Kang-Doo Kim

Gwan-Bon Koo

Jin-Tae Kim

Dong-Hyuk Uim

Seung-Min Lee

Young-Hee Song

Jeong-hee Lee

Jang-Won Kim

Chang-Ki Jeon

Young-hee Song

Min Ji Lee

Su-Young Park

Keun-Hee Bai

Sung-woo Hwang

Seok-Woo Kim

Hong-Sik Park

Chung-Keun Yoo

Bok-Young Lee

Jeon-Il Lee

Ki-Hyuk Kim

Jae-Young Jang

Ae-ryun Kim

Taek-Kyun Shin

Sung-Hun Kim

Eui-seok Kim

Cheol-jun Yoo

Jong-Woon Moon

Sang-Don Jang

Won Taek Moon

Shang-Hyeun Park

Sang-Jun Ahn

Jin-gi Hong

Hun-Yong Park

Dong-Hyeok Kim

Yoon-Suk Choi

Dong-ho Kim

Hyun-Jung Lee

Jung-Na Heo

Sun-Woong Kim

Yong-Ik Hwang

Kyung Oun Jang

Yong-Cheol Choi

Young-Hun Choi

Ji-yeon Ku

Dong-hyuck Kam

Chi-Yong Kim

Yong-Hwa Han

Yoo-Woong Hwang

Gil-Jae Choi

Won-Seok Kim

Bosung Ku

Jin-Kuk Bae

Byoung-Min Yun

Young-Ik Hwang

Hong-Mi Choi

Ui-Jin Lee

Jin-Woo Moon

Yong-cheol Seo

Jeong-Na Huh

The present invention relates to a novel quinoline compound and a use thereof and to a novel quinoline compound exhibiting CYP4A inhibition activity and a use thereof for preventing, alleviating, treating a metabolic disease. The compound disclosed in the present invention has a remarkable effect of inhibiting CYP4A and exhibits the activities of promoting the absorption of glucose into hepatocytes, inhibiting fat accumulation in hepatocytes, suppressing endoplasmic reticulum-induced reactive oxygen species, and treating steatohepatitis, and thus can be very advantageously used for developing therapeutics for metabolic diseases such as diabetes mellitus and fatty liver.

Quinoline compound and use thereof

A semiconductor device includes a substrate, a gate structure on the substrate, a first etch stop layer, a second etch stop layer, and an interlayer insulation layer that are stacked on the gate structure, and a contact plug penetrating the interlayer insulation layer, the second etch stop layer, and the first etch stop layer and contacting a sidewall of the gate structure. The contact plug includes a lower portion having a first width and an upper portion having a second width. A lower surface of the contact plug has a stepped shape.

Semiconductor device with a contact plug adjacent a gate structure

An organic light emitting display device is disclosed. One inventive aspect includes a plurality of pixels provided at a region sectioned by scan lines and data lines and an initialization power unit. The plurality of pixels are configured to control the amount of a current flowing from a first power source to a second power source through an organic light emitting diode in response to a data signal. The initialization power unit supplies initialization power to a driving transistor within each pixel circuit. The initialization power unit further controls the voltage of the initialization power supply to maintain a substantially constant voltage difference between the second power source and the initialization power.

Organic light emitting display device and driving method thereof

A semiconductor device may include a plurality of active patterns and a plurality of gate structure on a substrate, a first insulating interlayer covering the active patterns and the gate structures, a plurality of first contact plugs extending through the first insulating interlayer, a plurality of second contact plugs extending through the first insulating interlayer, and a first connecting pattern directly contacting a sidewall of at least one contact plug selected from the first and second contact plugs. Each of gate structures may include a gate insulation layer, a gate electrode and a capping pattern. Each of first contact plugs may contact the active patterns adjacent to the gate structure. Each of the second contact plugs may contact the gate electrode in the gate structures. An upper surface of the first connecting pattern may be substantially coplanar with upper surfaces of the first and second contact plugs.

Semiconductor devices and method of manufacturing the same

Refrigerator

An etching method includes providing a plasma of a first treatment gas to an etching-object to form a deposition layer on the etching-object, the first treatment gas including a fluorocarbon gas and an inert gas, and the etching-object including a first region including silicon oxide and a second region including silicon nitride, providing a plasma of an inert gas to the etching-object having the deposition layer thereon to activate an etching reaction of the silicon oxide, wherein a negative direct current voltage is applied to an opposing part that is spaced apart from the etching-object so as to face an etching surface of the etching-object, the opposing part including silicon, and subsequently, providing a plasma of a second treatment gas to remove an etching reaction product, the second treatment gas including an inert gas and an oxygen-containing gas.

Etching method and methods of manufacturing semiconductor device using the same

A semiconductor device may include a substrate including a fin active region extending in a first direction, a gate structure crossing the fin active region and extending in a second direction crossing the first direction, source/drain regions on the fin active region at opposite sides of the gate structure, a first contact structure electrically connected to one of the source/drain regions, a pair of first contact block structures on opposite first sidewalls, respectively, of the first contact structure in the second direction.

Integrated circuit devices and methods of manufacturing the same

A semiconductor device includes gates extending in a first direction on a substrate, each gate of the gates including a gate insulation layer, a gate electrode, and a first spacer, first contact plugs contacting the substrate between adjacent ones of the gates, the first contact plugs being spaced apart from sidewalls of corresponding ones of the gates, a second contact plug contacting an upper surface of a corresponding gate electrode, the second contact plug being between first contact plugs, and an insulation spacer in a gap between the second contact plug and an adjacent first contact plug, the insulation spacer contacting sidewalls of the second contact plug and the adjacent first contact plug, and upper surfaces of the second contact plug and the adjacent first contact plug being substantially coplanar with each other.

Semiconductor device

A liquid crystal display device includes a liquid crystal panel and a light guide plate below the liquid crystal panel. The liquid crystal display device also includes first and second LED packages that are arranged alternately along a light entering surface of the light guide plate. Additionally, the liquid crystal display device includes a printed circuit board that has first and second portions facing each other and at which the first and second LED packages are mounted, respectively. The printed circuit board also includes a third portion, in a bent state, which connects an end of the first portion in a lengthwise direction, and an end of the second portion in a lengthwise direction. The liquid crystal display device further includes a first guide portion that is located at an outer side of the first and second LED packages. The first guide portion is interposed between and attached to the first and second portions.

Liquid crystal display device and LED assembly

According to various embodiments of the present disclosure, a docking station includes a base housing comprising a first surface having a recessed portion, a second surface directed in an opposite direction to the first surface, and a side surface at least partially surrounding a space between the first surface and the second surface, a slide housing slidably mounted on the recessed portion to open and close at least a part of the recessed portion, and a connection member disposed on the recessed portion, in which as the slide housing slides, the connection member is hidden or exposed, and in a state where the at least the part of the recessed portion is opened, the slide housing is positioned inclined with respect to the first surface or the second surface. The docking station described above may be implemented variously depending on embodiments.

Docking station for electronic device

The present invention provides a multi-rotor flying object including: a body; a plurality of rotor units each including a propeller and a power unit for driving the propeller; and a steering unit including a connection member connecting the plurality of rotor units to each other and an actuator installed on the body and activating the connection member to allow the plurality of rotor units to be simultaneously inclined at the same angle with respect to the body.

Multi-rotor flying object

A semiconductor device includes a semiconductor substrate including a main chip region and a remaining scribe lane region surrounding the main chip region, a passivation layer on the main chip region, the passivation layer including a plurality of bridge patterns extending from the main chip region in a first direction across the remaining scribe lane region, a plurality of bump pads exposed by the passivation layer on the main chip region, a plurality of dam structures along edges of the main chip region on the remaining scribe lane region, the plurality of bridge patterns arranged on the plurality of dam structures at a first pitch in the first direction, a seed layer on the plurality of bump pads, and bumps on the seed layer.

A device may include a receiver configured to receive messages about first transmission rates provided by cooperation devices configured for device-to-device (D2D) communications in a radio communication system supporting the D2D communications; a determiner configured to determine second transmission rates for the device to suggest to the cooperation devices based on the first transmission rates; and/or a transmitter configured to transmit messages about the second transmission rates to the cooperation devices. The determiner may be further configured to change the second transmission rates until the first transmission rates converge. The determiner may be further configured to determine a final transmission rate suggested to the cooperation devices based on the converged first transmission rates.

Methods and devices for allocating resources for communications with base stations

Growing community of inventors

Gyeonggi-do, South Korea

Sang-Hyun Lee