Hyundai Electronics Industries Co. Ltd.

Lg Semicon Co., Ltd.

Hyundai Microelectronics Co., Ltd.

Sang Hyun Kim

Jae Sung Roh

Bong Soo Kim

Yun Jun Huh

Jeong Mo Hwang

Jae Woo Park

Nam Hoon Cho

Je Uk Oh

Methods of forming a MOS transistor having dual gates minimizes impurity channeling and diffusion that can occur during impurity injection and activating processes. A method of fabricating the transistor includes the steps of forming a first conduction type well and a second conduction type well in a semiconductor substrate having an isolation region and an active region formed therein. Then, a gate oxide film is formed on an entire surface of the substrate, and a polysilicon layer is deposited on the gate oxide film preferably at a temperature of about 660&deg; C. to about 700&deg; C. and a pressure of about 10 to about 300 Torr. Next, portions of the polysilicon layer and the gate oxide film are selectively removed to form a gate electrode on each of the wells. Impurity ions are injected, having a conduction type opposite a conduction type of the corresponding well, into an exposed surface of each of the wells, to form lightly doped impurity regions. Insulating film sidewalls are formed at sides of each of the gates. Then, first conduction type impurity ions are heavily injected into a surface of the exposed first conduction type well and into the gate electrode formed on the first conduction type well. Also, second conduction type impurity ions are heavily injected into a surface of the exposed second conduction type well and into the gate electrode formed on the second conduction type well. Next, a first heat treatment is conducted in an oxygen ambient and a second heat treatment is conducted in a nitrogen ambient, to diffuse the impurities.

Method for fabricating MOS transistor having dual gate

A method for fabricating a contact pad for a semiconductor device, including the steps of forming device isolation layers in a semiconductor substrate to define active regions, forming a plurality of wordlines crossing the active regions, forming an insulating layer on an entire surface, and selectively removing the insulating layer on storage node contact regions, a bitline contact region, and the device isolation layer in contact with the bitline contact region, so as to form an epitaxial growth blocking layer, and conducting an epitaxial growth using the epitaxial growth blocking layer as a mask, to form a storage node contact pad as well as a bitline contact pad by causing an epitaxial layer grown in the bitline contact region to extend laterally toward the device isolation layer.

Method for fabricating contact pad for semiconductor device

A semiconductor manufacturing device uniformly grows a film on the surface of a wafer and reduces a turnaround time by shortening the time per process unit. The device includes a chamber, a plurality of lamps disposed on the upper end of the chamber to heat the wafer, and a plurality of pyrometers for supporting the wafer inserted into the wafer, detecting the inner temperature of the chamber and supporting the wafer onto a heat board as the wafer is heating to a predetermined temperature. The device further includes the heat board disposed on the lower end of the chamber to hold thereon the wafer lowered by the pyrometers and to keep the processing temperature, a wafer inlet or outlet formed on one side of the chamber, and reaction gas inlet and outlet formed on both sides of the chamber for injecting the reaction gas for growing the film on the wafer as the wafer is lowered onto the heat board.

Semiconductor manufacturing device

A method of forming a capacitor for a semiconductor device includes the steps of forming a gate electrode on a semiconductor substrate, forming an impurity diffused region on portions of the semiconductor substrate at sides of the gate electrode, forming a storage node electrode layer contacting one side of the impurity diffused region, forming a thermal nitride film on the storage node electrode layer, forming a Ta.sub.2 O.sub.5 layer on the thermal nitride film, and annealing the Ta.sub.2 O.sub.5 layer using an N.sub.2 O gas.

Growing community of inventors

Chungcheongbuk-do, South Korea

Sang Hyun Kim