Skhynix Inc.

Sang-Hyun Ban

Tae-Hoon Kim

Woo-Tae Lee

Hye-Jung Choi

Seok-Man Hong

Uk Hwang

Gwang-Sun Jung

Beom-Seok Lee

Provided is an electronic device including a semiconductor memory. The semiconductor memory may include: a plurality of first lines; a plurality of second lines; a plurality of memory cells disposed in respective intersection regions between the plurality of first lines and the plurality of second lines; a first test circuit configured to apply a stress pulse to a first selection line coupled to a defective memory cell among the plurality of memory cells during a first test period, in response to a first test control signal, the first selection line including any one of the plurality of first lines; and a control unit configured to generate the first test control signal based on a first test mode signal.

Electronic device for changing short-type defective memory cell to open-type defective memory cell by applying stress pulse

A method drives an electronic device including a semiconductor memory in a test mode. The method includes applying a stress pulse simultaneously to a plurality of memory cells to turn on the plurality of memory cells, determining whether the memory cells are turned on or turned off, and applying a second maximum voltage to a selected memory cell of the plurality of memory cells only when the selected memory cell is determined to be in a turned-off state.

Method for driving an electronic device including a semiconductor memory in a test mode

A chalcogenide material and an electronic device are provided. The chalcogenide material may include 0.1-5 atomic percent (at %) of silicon, 15-22 at % of germanium, 30-35 at % of arsenic and 40-50 at % of selenium. The electronic device may include a semiconductor memory device, the semiconductor memory device including a first memory cell that includes a first switching element. The first switching element may include a chalcogenide material including 0.1-5 atomic percent (at %) of silicon, 15-22 at % of germanium, 30-35 at % of arsenic, and 40-50 at % of selenium.

Chalcogenide material and electronic device including the same

An electronic device includes a semiconductor memory. The semiconductor memory includes a plurality of first lines; a plurality of second lines; a plurality of memory cells disposed in respective intersection regions between the first lines and the second lines and coupled between the first lines and the second lines, the plurality of memory cells having a first turn-on voltage; and a test circuit block suitable for applying a stress pulse having a voltage level equal to or higher than the first turn-on voltage to one or more first lines selected from the first lines in a test mode.

Semiconductor memory capable of reducing an initial turn-on voltage of a memory cell using a stress pulse in a test mode, and method for driving the same

An electronic device includes a semiconductor memory, and the semiconductor memory includes a memory cell including a resistive memory element having a high resistance state and a low resistance state according to stored data, a selection element coupled serially to the resistive memory element, and a current clamping transistor electrically connected to a first end of the memory cell to limit an amount of a current flowing through the memory cell. In a drift recovery operation of the memory cell, a rising pulse voltage may be applied to a second end of the memory cell in a state in which the current clamping transistor has been turned off, the first end facing the second end.

Growing community of inventors

Icheon, South Korea

Sang-Hyun Ban