Hyundai Motor Company

Kia Corporation

Kia Motors Corporation

Korea Institute of Science and Technology

Sang-Hyeok Yang

Jong-seok Lee

Dong-Gu Kim

Ui-Yeon Won

Sang Gyu Park

Hyunsoo Kim

Ilseon Yoo

Hyun-Soo Kim

Byoung-Chul Min

Ji-Sung Lee

Su-Jung Noh

Joon-Hyun Kwon

Han-Saem Lee

Dong-Soo Han

Jong-Bum Choi

A spin Hall magnetic sensor includes a plurality of magnetic thin film units including a magnetic layer stacked on a non-magnetic layer, and a plurality of non-magnetic substances disposed between the plurality of magnetic thin film units, The magnetic includes a Wheatstone bridge structure to observe a magnetic Hall resistance generated by a spin orbit torque (SOT).

Spin hall magnetic sensor and method of measuring magnetoresistance using the same

A method for manufacturing a two-terminal memory device includes: forming an extended drain and a drain layer on a substrate; forming a ferroelectric layer covering the substrate and the extended drain; forming a semiconducting layer on the ferroelectric layer, and forming a source layer connected to the semiconducting layer on the ferroelectric layer.

Method for manufacturing a two-terminal memory device

A two-terminal memory device includes: a substrate; an extended drain extending from a drain and a lower surface of the drain and laminated on the substrate; a ferroelectric layer connected to the drain and covering the extended drain and the substrate; and a source laminated on the ferroelectric layer to face the drain.

Two-terminal memory device

A two-terminal memory device including: a substrate; a source and a drain formed to face each other on an upper surface of the substrate; a ferroelectric layer connected to the source and the drain and formed between the source and the drain; and an extended drain extending from the drain and laminated on the ferroelectric layer. The two-terminal memory device may be applied as a cross-point type and neuromorphic device capable of implementing multi-resistance levels with multi-layer switchable resistance layers.

Two-terminal memory device, a method for manufacturing the same, and a semiconductor device including a two-terminal memory device

In detecting a particulate matter (PM), which measures a change in capacitance depending on induction of the particulate matter, an apparatus for detecting a particulate matter includes: a power supply unit applying bias voltage for inducing the PM; a detection unit forming a magnetic field by using detected voltage applied from the bias voltage and generating PM resistance by the PM by inducing the PM to the magnetic field; and a measurement unit including a first capacitor and a second capacitor in series and measuring the changed capacitance of the first capacitor and the second capacitor according to a change in PM resistance by connecting any one capacitor to the detection unit in parallel. A method for detecting a particulate matter includes: applying bias voltage; generating PM resistance; and measuring changed capacitance according to a change in PM resistance by using the apparatus.

Apparatus and method for detecting particulate matter

A chip-type PM (Particulate Matter) sensor comprising a sensing unit installed in a cylindrical housing mounted on an exhaust pipe, the sensing unit having a sensing pattern for sensing particulate matters contained in exhaust gas, wherein the sensing unit may include a substrate formed in a direction perpendicular to the longitudinal direction of the housing, and the sensing pattern formed on a surface of the substrate, facing the exhaust pipe, and configured to sense the particulate matters.

Chip-type particulate matter sensor

A sensor for measuring particulate matters is supplied with a bias voltage to form an electric field to increase an accumulated amount of particulate matters at a sensing unit. The sensor includes a sensing unit in which measurement electrodes and ground electrodes are disposed to alternate with one another in a housing fixed to an exhaust pipe. The measurement electrodes are electrically connected to one another, and the ground electrodes are electrically connected to one another. Bias electrodes are disposed between the ground electrodes to supply the bias voltage to the sensing unit. The bias electrodes are electrically connected to one other.

Sensor for measuring particulate matter with a bias voltage

An apparatus of correcting an offset for a differential amplifier which compensates a direct current (DC) offset voltage in a differential analog signal amplifier using a resistive feedback structure to minimize a deviation and a method thereof are provided. The apparatus includes a differential amplifier that is configured to amplify a common DC voltage input via a first resistor and a second resistor with a predetermined amplification factor to output the amplified voltage. A controller is configured to compare voltages output from both output terminals of the differential amplifier to determine whether to generate an offset. In addition, the offset is corrected using a switching unit coupled in parallel to an input terminal of the differential amplifier in response to detecting a generated offset. The controller is also configured to adjust an asymmetric property of the input terminal of the differential amplifier to correct the generated offset.

Offset correction apparatus for differential amplifier and method thereof

An analog signal processing circuit of a microphone includes a bias circuit including a first sub-circuit which receives a signal from the microphone to output a first signal and a second sub-circuit which receives a reference voltage to output a second signal. A fully differential circuit receives the first signal and the second signal to output a fully differential signal. Each of the first sub-circuit and the second sub-circuit includes a bias sub-circuit to apply a bias voltage.

Analogue signal processing circuit for microphone

A microphone, that increases sensitivity without a separate circuit is provided. The microphone includes an audio detection module having a vibration film that outputs capacitance signals by vibrating audio introduced from the exterior and a piezoresistive element that outputs a piezoresistive signal by a sound pressure of the audio. A semiconductor chip includes an amplifier electrically connected to the audio detection module to receive a capacitance signal and a piezoresistive signal from the audio detection module and amplifies the capacitance signal and piezoresistive signal to an electrical signal. The amplifier includes an input terminal that receives an input of the capacitance signal; a first resistor connected to the input terminal and the piezoresistive element; an output terminal that amplifies and outputs the capacitance signal and piezoresistive signal to an electrical signal; and a second resistor connected to the input terminal and the output terminal and connected to the piezoresistive element.

Microphone sensor

Provided is a differential amplifier including: an operational amplifier (OP AMP) having an inverting input, a non-inverting input, an inverting output, and a non-inverting output, a first feedback capacitor connected to the non-inverting input and the inverting output. A second feedback capacitor connected to the inverting input and the non-inverting output, a first four-terminal transistor connected to the non-inverting input and the inverting output. A second four-terminal transistor connected to the inverting input and the non-inverting output. One of source and drain of the first transistor and a gate thereof are connected to the inverting output, the other one of the source and drain and a bulk terminal are connected to the non-inverting input, one of source and drain of the second transistor and a gate thereof are connected to the non-inverting output, and the other one of the source and drain terminals and a bulk terminal are connected to the inverting input.

Growing community of inventors

Suwon-si, South Korea

Sang-Hyeok Yang