Samsung Electronics Co., Ltd.

Seoul National University

Lg Chem, Ltd

Industry-University Cooperation Foundation Hanyang University

Sang-Hwa Lee

Nam-Ik Cho

Seong-Jong Ha

Soo-Kyun Kim

Jae-Won Moon

Hee-Won Jung

Sung-Dae Cho

Yun-Je Oh

Sung-dae Cho

Hyung-Il Koo

Noyoung Chung

Kyoung-Ju Park

Sung-hoon Jang

Sang-Wook Oh

Tae-Hwa Hong

Byung-Jun Son

Yun-jung Kim

Yang-Kyoo Han

Je-Gwon Lee

Su-Hwa Kim

Taekyum Kim

Byung Je Jung

Jae-Yong Kim

Jae-Hyun An

Narae Bang

Hyunyong Jeong

Sang-Wook Ho

Disclosed are semiconductor devices and their fabrication methods. The semiconductor device comprises a logic cell on a substrate, and a first metal layer on the logic cell. The first metal layer includes first and second power lines and first to third lower lines on first to third wiring tracks therebetween. The first to third wiring tracks extend in parallel in the first direction. The first lower line includes first and second lines spaced apart in the first direction from each other at a first distance. The third lower line includes third and fourth lines spaced apart in the first direction at a second distance. The first line has a first end facing the second line. The third line has a second end facing the fourth line. A curvature at the first end is substantially the same as that at the second end.

Semiconductor device and method of fabricating the same

Disclosed are mask layout correction methods and a method for fabricating semiconductor devices. The mask layout correction method comprises performing a first optical proximity correction on an initial pattern layout. The step of performing the first optical proximity correction includes providing a target pattern of the initial pattern layout with control points based on a first model, obtaining a predicted contour of the initial pattern layout by performing a simulation, and obtaining an error between the target pattern and the predicted contour from the control points. The control points include first control points on an edge of the target pattern and second control points in an inside of the target pattern. The step of obtaining the error includes acquiring first error values from the first control points, providing weights to the first error values, and acquiring second error values from the second control points.

Mask layout correction method and a method for fabricating semiconductor devices using the same

Disclosed is a method for photographing a panoramic image including the steps of recognizing movement of a corresponding photographing apparatus by comparing a current real-time input image with a previous image through a motion estimation mechanism with exposure compensation, determining a time to photograph each next picture by determining whether movement in a photography direction reaches a preset threshold value, and photographing each next picture by manual or automatic operation at the determined time.

Method for photographing panoramic image by preventing excessive perpendicular movement

Method for photographing panoramic image by preventing excessive perpendicular movement with the aid of a displayed icon

An optical proximity correction method includes loading a target layout for a mask, generating a correction density map based on manipulation of flare to correct global errors caused by exposing equipment, generating a flare map via convolution integration of the correction density map and a point spread function (PSF) regarding the flare, and correcting the target layout using the flare map and an OPC model.

Optical proximity correction (OPC) method and method of fabricating mask using the OPC method

Provided are an optical proximity correction (OPC) method capable of correcting a slit-effect in an extreme ultraviolet (EUV) exposure process and a method of manufacturing an EUV mask by using the OPC method. The OPC method includes, dividing a transmission cross coefficient (TCC) according to regions of a slit that is used in an EUV exposure process, generating OPC models reflecting the TCCs that are divided, and correcting the OPC method.

Optical proximity correction method and method of manufacturing extreme ultraviolet mask by using the optical proximity correction method

Method for photographing panoramic image based on motion vectors between current real time input image with a previous image through a motion estimation mechanism

The present invention relates to a gas storage material comprising a novel mesoporous polymer, that shows superior gas storage efficiency and can stably adsorb and desorb gas, and method for gas storage using thereof. The gas storage material comprises an acrylamide-based polymer.

Gas storage material and method for gas storage

A method of controlling an image analysis apparatus is provided. The method includes receiving a query image; determining at least one main color distributed in the query image and a specific main color from among the at least one main color by using color information contained in the query image; dividing the query image into at least one block having a predetermined number of pixels; and determining whether each of the at least one block includes more than a predetermined percentage of a main color for comparison among the at least main color, and creating a binary spatial distribution map by digitizing the at least one block.

Image analysis apparatus using main color and method of controlling the same

Method for photographic panoramic image when threshold exceeds comparison between current and previous images

A method for taking a panorama mosaic photograph includes displaying a partial image of a previously taken image as a guide image on a viewer of an image to be currently taken and taking a number of images constituting the panorama mosaic photograph according to a photography operation; projecting the taken images onto a common cylindrically curved surface; and joining the projected images into a single image.

Method for taking panorama mosaic photograph with a portable terminal

A panoramic picture photographing method permits more accurate photographing of an image, particularly a panoramic image of a subject, without additional equipment, or separate devices and hardware. The method includes projecting an image, which is successively inputted in every predetermined unit of time, to an imaginary surface having a same focal distance in photographing each image constituting a panoramic picture to obtain a projected image; confirming movement of a corresponding photographing apparatus so that the projected image is compared with a previous image in real time by using a motion estimation technique, to which exposure correction has been applied; determining a photographing time point of each image by confirming the confirmed movement of the corresponding photographing apparatus according to a photographing direction has reached a predetermined critical value; and photographing each image at the photographing time point of each image according to a passive input or automatically.

Method for photographing panoramic picture

Provided are a frame conversion apparatus and method and a frame type detecting apparatus and method. The frame conversion apparatus may include a detecting unit and an inverse telecine unit. The detecting unit may determine that each data frame is a telecine frame or a progressive frame according to the rate of discrete cosine transform (DCT) operation type performed on macro blocks of the frame or the number of the macro blocks on which each type of DCT operation is performed and output frame type information. The inverse telecine unit may convert the data frames into progressive frames and output the progressive frames in response to the frame type information.

Frame conversion apparatus and method, and frame type detection apparatus and method

Growing community of inventors

Seoul, South Korea

Sang-Hwa Lee