Intel Corporation

Imec

Euv LLC.

Sang Hun Lee

Charles Henry Wallace

Manish Chandhok

Robert L Bristol

Michael Scott Goldstein

Glenn D Kubiak

Arun Ramamoorthy

Daniel A Tichenor

Todd R Younkin

Gian Francesco Lorusso

Christof Gabriel Krautschik

Yashesh Shroff

Jae-Mo Koo

Toru Tanibata

Techniques related to multi-pass patterning lithography, device structures, and devices formed using such techniques are discussed. Such techniques include exposing a resist layer disposed over a grating pattern with non-reflecting radiation to generate an enhanced exposure portion within a trench of the grating pattern and developing the resist layer to form a pattern layer having a pattern structure within the trench of the grating pattern.

Multi-pass patterning using nonreflecting radiation lithography on an underlying grating

Disclosed are methods and systems for determining a topography of a lithographic optical element and/or a holder of a lithographic optical element. In one embodiment, the method includes directing electromagnetic radiation towards a lithographic optical element, where the electromagnetic radiation comprises electromagnetic radiation in a first predetermined wavelength range and electromagnetic radiation in a second predetermined wavelength range. The method further includes using the lithographic optical element to adsorb the electromagnetic radiation in the first predetermined wavelength range, and to reflect at least a portion of the electromagnetic radiation in the second predetermined wavelength range towards a substrate comprising a photosensitive layer, thereby exposing the photosensitive layer to form an exposed photosensitive layer. The method still further includes performing an evaluation of the exposed photosensitive layer and, based on the evaluation, determining a topography of the lithographic optical element.

Methods and systems for evaluating extreme ultraviolet mask flatness

According to one embodiment a broad-angle multilayer (ML) mirror system is disclosed. The ML mirror includes a multiple layer structure configured to provide uniform reflectivity over a wide range of angles with small phase shifts.

Broad-angle multilayer mirror design

A magnetic and/or electric field may be generated around collector optics in an EUV lithography system to deflect debris particles from the reflective surfaces of the optics. The magnetic and/or electric field may be generated by a solenoid structure around the optics or by passing current through inner an outer shells in a nested shell arrangement.

Erosion mitigation for collector optics using electric and magnetic fields

The present invention describes a method including: providing a substrate, the substrate including a first region and a second region; forming a multilayer mirror over the substrate; forming a phase-shifter layer over the multilayer mirror; forming a capping layer over the phase-shifter layer; removing the capping layer and the phase-shifter layer in the second region; illuminating the first region and the second region with EUV light; and reflecting the EUV light off the first region and the second region. The present invention also describes a structure including: a substrate, the substrate including a first region and a second region; a multilayer mirror located over the first region and the second region; a phase-shifter layer located over the multilayer mirror in the region; an intensity balancer layer located over the multilayer mirror in the second region; and a capping layer located over the phase-shifter layer in the first region and over the intensity balancer layer in the second region.

Forming an EUV mask with a phase-shifter layer and an intensity balancer layer

In one embodiment of the present invention, thermal deformation or bending of membranes in a transition radiation emitting structure can be reduced by providing flex regions in the membranes or the membrane support structures. In a second embodiment, deformation of membranes is compensated for by fabricating the membranes to cooperatively bend in a similar manner and direction. In a third embodiment, deformation of the membrane is reduced by fabricating the membranes with an intrinsic tensile or compressive stress.

Transition radiation apparatus

Extreme ultraviolet mask with molybdenum phase shifter

Employing collector optics that have a sacrificial reflective surface can significantly prolong the useful life of the collector optics and the overall performance of the condenser in which the collector optics are incorporated. The collector optics are normally subject to erosion by debris from laser plasma source of radiation. The presence of an upper sacrificial reflective surface over the underlying reflective surface effectively increases the life of the optics while relaxing the constraints on the radiation source. Spatial and temporally varying reflectivity that results from the use of the sacrificial reflective surface can be accommodated by proper condenser design.

Condenser optic with sacrificial reflective surface

A method and apparatus to facilitate separation of a mask and mask platform is described. That method and apparatus comprises a temperature differential device that provides a temperature differential between a mask and a mask platform. The temperature differential facilitates separation of the mask and the mask platform.

Method and apparatus to facilitate separation of a mask and a mask platform

An embodiment of the present invention includes a technique to detect erosion in an extreme ultra violet (EUV) source collector system. An initial impedance and a coating impedance of a multi-layer (ML) coating of the collector in one of an extreme ultra violet lithography (EUVL) stepper and an optical system are obtained at first and second time instants. A relation between the coating and initial impedances is generated. An erosion rate of the ML coating is determined based on the relation.

Growing community of inventors

Sunnyvale, CA, United States of America

Sang Hun Lee