Samsung Electronics Co., Ltd.

Sang-Hun Jeon

I-hun Song

Chang-jung Kim

Sung-ho Park

Jung-Dal Choi

Seung-eon Ahn

Moon-Sook Lee

Chang-seok Kang

Ju-Hyung Kim

Byeong-Ok Cho

Chung-woo Kim

Jong-Sun Sel

Sun-il Kim

Ho-jung Kim

Ji-hyun Hur

Won-Seok Jung

Min Gyu Kim

Jong-Min Lee

Joon-Chul Goh

Yoo-Cheol Shin

Jai-kwang Shin

Young Shin Kim

In-kyeong Yoo

Myoung-jae Lee

Cheol-Gon Lee

Wan-jun Park

Young Ju Kim

David Seo

Jae-chul Park

Sung-Ho Park

Dong-seok Suh

Soo-doo Chae

Jo-won Lee

Yong-Woo Jeon

Sung-kyu Choi

U-in Chung

Sun-Ae Seo

Dong-joon Ma

Jae-Sung Sim

Woong-hee Sohn

Jin-taek Park

Chang-Seok Kang

Chung-Hyun Ryu

I-Hun Song

Woo-sung Lee

Jae-woong Choi

Ji-Hyun Hur

Jung-Hun Kwak

Jae-Soon Choi

Hoon-Soo Ham

Sang-Sik Heo

Yin Huaxiang

Seung-Eon Ahn

Chang-Jung Kim

Methods of operating a power supply switching circuit including selecting a first power supply signal for provisioning through the power supply switching circuit to a electronic storage device. A current draw can be detected via the first power supply signal that exceeds a predetermined current limit and a second power supply signal can be coupled to the first power supply signal for provisioning through the power supply switching circuit to the electronic storage device responsive to the current draw exceeding the predetermined current limit.

Circuits and methods to selectively switch power signal generator inputs to a load

An optical touch screen apparatus in which an oxide semiconductor transistor is used as a light sensing device, and a method of driving the optical touch screen apparatus. The optical touch screen apparatus includes an array including a plurality of light sensing pixels for sensing incident light, a gate driver for providing each of the light sensing pixels with a gate voltage and a reset signal and a signal output unit for receiving a light sensing signal from each of the plurality of light sensing pixels to output a data signal. The gate driver includes a plurality of gate lines that provide a gate voltage to each of the light sensing pixels and at least one reset line that provides a reset signal to each of the light sensing pixels and is electrically connected to the plurality of light sensing pixels.

Optical touch screen apparatuses and methods of driving the optical touch screen apparatuses

Example embodiments are directed to a light-sensing circuit, a method of operating the light-sensing circuit, and a light-sensing apparatus including the light-sensing circuit. The light-sensing circuit includes a light-sensitive oxide semiconductor transistor that senses light; and a switching transistor connected to the light-sensing transistor in series and configured to output data. During a standby time, a low voltage is applied to the switching transistor and a high voltage is applied to the light-sensitive oxide semiconductor transistor, and when data is output, the high voltage is applied to the switching transistor and the low voltage is applied to the light-sensitive oxide semiconductor transistor.

Light-sensing circuit, method of operating the light-sensing circuit, and light-sensing apparatus employing the light-sensing circuit

Image sensors and methods of operating the same. An image sensor includes a pixel array including a plurality of pixels. Each of the plurality of pixels includes a photo sensor, the voltage-current characteristics of which vary according to energy of incident light, and that generates a sense current determined by the energy of the incident light; a reset unit that is activated to generate a reference current, according to a reset signal for resetting at least one of the plurality of pixels; and a conversion unit that converts the sense current and the reference current into a sense voltage and a reference voltage, respectively.

Image sensors having variable voltage-current characteristics and methods of operating the same

Example embodiments disclose transistors, methods of manufacturing the same, and electronic devices including transistors. An active layer of a transistor may include a plurality of material layers (oxide layers) with different energy band gaps. The active layer may include a channel layer and a photo sensing layer. The photo sensing layer may have a single-layered or multi-layered structure. When the photo sensing layer has a multi-layered structure, the photo sensing layer may include a first material layer and a second material layer that are sequentially stacked on a surface of the channel layer. The first layer and the second layer may be alternately stacked one or more times.

Transistors, methods of manufacturing the same, and electronic devices including transistors

A remote touch panel includes a plurality of light sensor cells arranged in two dimensions. Each light sensor cell may include a light-sensitive semiconductor layer and first and second electrodes electrically connected to the light-sensitive semiconductor layer. The remote touch panel may be controlled at a remote distance. For example, a large display apparatus can be easily controlled by using a simple light source device, for example, a laser pointer.

Remote touch panel using light sensor and remote touch screen apparatus having the same

Example embodiments are directed to light sensing circuits having a relatively simpler structure by using light-sensitive oxide semiconductor transistors as light sensing devices, and remote optical touch panels and image acquisition apparatuses, each including the light sensing circuits. The light sensing circuit includes a light-sensitive oxide semiconductor transistor in each pixel, wherein the light-sensitive oxide semiconductor transistor is configured as a light sensing device, and a driving circuit that outputs data. The light sensing circuit may have a relatively simple circuit structure including a plurality of transistors in one pixel. As a result, the structure and operation of the light sensing circuit may be simplified.

Light sensing circuit, and remote optical touch panel and image acquisition apparatus including the light sensing circuit

A light sensing circuit using an oxide semiconductor transistor, a method of manufacturing the light sensing circuit, and an optical touch panel including the light sensing circuit. Because the light sensing circuit includes only one light sensor transistor and one switch transistor formed on the same substrate, a structure of the light sensing circuit is simplified. Furthermore, because the light sensor transistor and the switch transistor have the same structure, a method of manufacturing the light sensing circuit is also simplified. Also, since an optical touch panel or an image acquisition apparatus using the light sensing circuit uses the light sensing circuit having a simple structure and does not use a capacitor, the optical touch panel or the image acquisition apparatus may be made thinner and larger.

Light sensing circuit, method of manufacturing the same, and optical touch panel including the light sensing circuit

An optical touch panel may include a plurality of light-sensing areas. The plurality of light-sensing areas may be integrally formed with pixels in a display panel or may be formed on the display panel, in order to sense incident light from outside the optical touch panel. A method of driving an optical touch panel may include sensing a change in an output from a plurality of light-sensing areas between two time points and determining that there is an optical input when the change in the output is greater than or equal to a first reference value that is defined in advance. The light-sensing areas may be integrally formed with pixels in a display panel or formed on a surface of the display panel, for sensing incident light from outside the optical touch panel.

Optical touch panels and methods of driving the same

Transistors and methods of manufacturing the same. A transistor may be an oxide thin film transistor (TFT) with a self-aligned top gate structure. The transistor may include a gate insulating layer between a channel region and a gate electrode that extends from two sides of the gate electrode. The gate insulating layer may cover at least a portion of source and drain regions.

Oxide semiconductor transistors and methods of manufacturing the same

A stacked memory device may include at least one memory unit and at least one peripheral circuit unit arranged either above or below the at least one memory unit. The at least one memory unit may include a memory string array, a plurality of bit lines, and a plurality of string selection pads. The memory string may include a plurality of memory strings arranged in a matrix and each of the memory strings may include a plurality of memory cells and a string selection device arranged perpendicular to a substrate. The plurality of bit lines may extend in a first direction and may be connected to ends of the plurality of memory strings. The plurality of string selection pads may be arrayed in a single line along the first direction and may be connected to the string selection devices included in the plurality of memory strings.

Stacked memory devices and method of manufacturing the same

Provided are an image sensor using a light-sensitive oxide semiconductor material as a light-sensitive device and a method of operating the image sensor for acquiring RGB values of incident light in the image sensor, the image sensor includes an array of a plurality of light-sensing cells wherein each of the light-sensing cells includes a light-sensitive oxide semiconductor layer that forms a channel region of an oxide semiconductor transistor. Electronic characteristics of the light-sensitive oxide semiconductor layer vary according to an amount of light irradiated onto the light-sensitive oxide semiconductor layer. Each of the light-sensing cells constitutes a single unit color pixel.

Image sensor using light-sensitive device and method of operating the image sensor

A thin film transistor includes a layer structure having a gate electrode, a gate insulation layer and a channel layer. A source line may contact the channel layer, and may extend along a direction crossing over the gate electrode. The source line may partially overlap the gate electrode so that both sides of the source line overlapping the gate electrode may be entirely positioned between both sides of the gate electrode. A drain line may make contact with the channel layer and may be spaced apart from the source line by a channel length. The drain line may have a structure symmetrical to that of the source line. Overlap areas among the gate electrode, the source line and the drain line may be reduced, so that the thin film transistor may ensure a high cut-off frequency.

Thin film transistors and methods of manufacturing thin film transistors

An image sensor according to example embodiments may include a plurality of light-sensitive transparent oxide semiconductor layers as light-sensing layers. The light-sensing layers may be stacked in one unit pixel region.

Image sensor using light-sensitive transparent oxide semiconductor material

Growing community of inventors

Yongin-si, South Korea

Sang-Hun Jeon