Hynix Semiconductor Inc.

Sang-Hui Kim

Kwang-Hyun Kim

A circuit for controlling the loading of write data in a semiconductor memory device includes a global bus; a data block configured to selectively load data of a predetermined first burst length or data of a second burst length, which is a half of the first burst length, for writing on the global bus in response to a control signal; and a memory bank configured to write the data of the first burst length or the data of the second burst length.

Growing community of inventors

Gyeonggi-do, South Korea

Sang-Hui Kim