Korea University Research and Business Foundation

Skhynix Inc.

Sang Ho Lim

Seong Rae Lee

Tae Young Lee

Kyung-Jin Lee

Eun-Sang Park

Dong-Su Son

Young Chan Won

Si Nyeon Kim

Hyung-Keun Gweon

Seok Jin Yun

A magnetic device includes a pinned layer having an in-plane magnetization direction; a free layer, having an in-plane magnetization direction, vertically spaced apart from the pinned layer to be aligned with the pinned layer; a conductive spacer layer disposed between the pinned layer and the free layer; an antiferromagnetic layer disposed to fin the magnetization direction of the pinned layer and vertically spaced apart from the pinned layer to be aligned with the pinned layer; and a noble metal spacer layer disposed between the pinned layer and the antiferromagnetic layer.

Magnetic device

Provided are a magnetic tunnel junction device and a method of fabricating the same. The magnetic tunnel junction device includes a heavy metal layer, a free magnetic layer disposed on the heavy metal layer, and a tunnel insulating layer disposed on the free magnetic layer. The heavy metal layer includes platinum (Pt), the free magnetic layer includes cobalt (Co), a magnetization state of the free magnetic layer has an easy-cone state, the free magnetic layer has a positive first-order perpendicular magnetic anisotropy constant and a negative second-order perpendicular magnetic anisotropy constant, and the tunnel insulating layer includes magnesium oxide (MgO).

Magnetic tunnel junction device with magnetic layer of easy-cone state

A harmonic Hall voltage analysis method is provided to analyze a damping-like effective field &#x394;Hand a field-like effective field &#x394;Hwith respect to polar angles of all magnetizations and a ratio R of an anomalous Hall effect resistance Rto a wide plane Hall resistance R(R=R/R).

Harmonic hall voltage analysis method

A multilayered magnetic thin-film stack including a tunneling barrier layer; a magnetic finned layer formed on a first surface of the tunneling barrier layer; and a magnetic free layer formed on a second surface of the tunneling barrier layer, which is opposite to the first surface, wherein at least one of the magnetic finned layer and the magnetic free layer includes a FeZr alloy layer and a first magnetic layer having a (001) bcc structure between the FeZr alloy layer and the tunneling barrier layer.

Multilayered magnetic thin film stack and nonvolatile memory device having the same

The present invention relates to a cobalt (Co) and platinum (Pt)-based multilayer thin film having a novel structure and perpendicular magnetic anisotropy, and to a fabrication method thereof. More specifically, the invention relates to a cobalt and platinum-based multilayer thin film having perpendicular magnetic anisotropy (PMA), which includes thin cobalt layers and thin platinum layers alternately deposited over a substrate, and has an inverted structure in which a thickness of the thin cobalt layers is greater than that of the thin platinum layers, and to a fabrication method thereof. The cobalt and platinum-based multilayer thin film has a new structure in which the thickness of a magnetic thin layer is greater than that of a non-magnetic thin layer. The multilayer thin film may be easily applied as a free layer and a pinned layer in a magnetic tunnel junction by controlling the perpendicular magnetic anisotropy energy depending on the thickness ratio of the layers. Also, the multilayer thin film has excellent thermal stability, and thus maintains its PMA energy density even after being subjected to a heat treatment process. In addition, it enables a fine amount of in-plane magnetic anisotropy to be formed by heat treatment so as to reduce the critical current density required for magnetization switching. Therefore, it may be advantageously used for high-performance and high-density MRAM.

Growing community of inventors

Namyangju-si, South Korea

Sang Ho Lim