Electronics and Telecommunications Research Institute

Korea Advanced Institute of Science and Technology

Korea Telecommunication Authority

Sang Heung Lee

Ho Kyun Ahn

Ja Yol Lee

Jong Won Lim

Seong Il Kim

Hae Cheon Kim

Hyung Sup Yoon

Dong Min Kang

Jin Yeong Kang

Jong Dae Kim

Sang Hun Kim

Chull Won Ju

Youn Sub Noh

Hyun Wook Jung

Hyun Cheol Bae

Sung Jae Chang

Hyun Kyu Yu

Kwi Dong Kim

Chong Ki Kwon

Jin Gun Koo

Jung H Ko

Il Gyu Choi

Soo Cheol Kang

Dae Woo Lee

Yil Suk Yang

Kyoung Ik Cho

Tae Moon Roh

Jae Kyoung Mun

Jong Hun Kim

Jong-Won Lim

Byoung-Gue Min

Hokyun Ahn

Seong-Il Kim

Tae Hee Lee

Kyu Hwan Shim

Seong Hwan Cho

Byoung Gue Min

Chang S Shim

Seung Hyeub Oh

Kyong Ik Cho

Hyeon Cheol Ki

Han Gil Choi

Kyung K Jeon

An apparatus and method for generating an electrical circuit of semiconductor channel resistor including a first passive element part including a resistor and a capacitor connected in parallel between a first port and a second port, and an ohmic resistor connected in series to the resistor and the capacitor which are connected in parallel are provided. The apparatus includes a substrate selection part configured to receive a selected substrate item; a resistor selection part configured to receive a selected resistor item; a capacitor selection part configured to receive a selected capacitor item; and a circuit generating part configured to generate an electrical circuit from the selected substrate item, the selected resistor item, and the selected capacitor item.

Electrical circuit of semiconductor channel resistor and apparatus and method for generating the same

A method of manufacturing a high-electron-mobility transistor device is provided. The method includes sequentially forming a transition layer and a semiconductor layer on a substrate, etching a portion of a surface of the semiconductor layer to form a barrier layer region having a certain depth and forming a barrier layer in the barrier layer region, forming a source electrode and a drain electrode on a 2-dimensional electron gas (2-DEG) layer upward exposed at a surface of the semiconductor layer, in defining the 2-DEG layer formed along an interface between the semiconductor layer and the barrier layer, forming a passivation layer on the semiconductor layer, the barrier layer, the source electrode, and the drain electrode and etching a portion of the passivation layer to upward expose the source electrode, the drain electrode, and the barrier layer, and forming a gate electrode on the upward exposed barrier layer.

High-electron-mobility transistor device and method of manufacturing the same

The present invention improves a heat dissipation property of a semiconductor device by transferring hexagonal boron nitride (hBN) with a two-dimensional nanostructure to the semiconductor device. A semiconductor device of the present invention includes a substrate having a first surface and a second surface, a semiconductor layer formed on the first surface of the substrate, an hBN layer formed on at least one surface of the first surface and the second surface of the substrate, and a heat sink positioned on the second surface of the substrate. A radiation rate of heat generated during driving of an element is increased to decrease a reduction in lifetime of a semiconductor device due to a temperature increase. The semiconductor device has a structure and configuration which are very effective in improving a rapid temperature increase due to heat generated by high-power semiconductor devices.

Semiconductor device with high heat dissipation property using hexagonal boron nitride and method of manufacturing the same

The present invention relates to a frequency modulation method based on a phase-locked loop capable of performing fast modulation independent of bandwidth. A frequency modulation system based on a phase-locked loop capable of performing fast modulation independent of bandwidth according to the present invention includes a loop filter including a proportional path and an integral path to determine a bandwidth of a phase-locked loop, a voltage-controlled oscillator configured to adjust a frequency according to an output of the loop filter, and a slope alternator configured to alternate an input current of the loop filter, wherein the slope alternator is located in the integral path of the loop filter to generate an offset current at a moment of change from a modulation rise to a modulation fall.

Frequency modulation system based on phase-locked loop capable of performing fast modulation independent of bandwidth and method of the same

A field effect transistor is provided. The field effect transistor may include a capping layer on a substrate, a source ohmic electrode and a drain ohmic electrode on the capping layer, a first insulating layer and a second insulating layer stacked on the capping layer to cover the source and drain ohmic electrodes, a &#x393;-shaped gate electrode including a leg portion and a head portion, the leg portion being connected to the substrate between the source ohmic electrode and the drain ohmic electrode, and the head portion extending from the leg portion to cover a top surface of the second insulating layer, a first planarization layer on the second insulating layer to cover the &#x393;-shaped gate electrode, and a first electrode on the first planarization layer, the first electrode being connected to the source ohmic electrode or the drain ohmic electrode.

Field effect transistor and method of fabricating the same

Provided herein is a feedback amplifier including an amplifier circuit configured to amplify an input signal input from an input terminal and output the amplified input signal to an output terminal; a feedback circuit configured to apply a feedback resistance value to a signal output to the output terminal, and to control a gain of the amplifier circuit by adjusting the input signal by a bias voltage applied with a feedback resistance value determined; a packet signal sensor configured to generate a fixed resistance control signal for controlling a fixed resistance value included in the feedback resistance value through a comparison between the output from the output terminal with a minimum signal level; and a fixed resistance controller configured to control the fixed resistance value included in the feedback resistance value in response to the fixed resistance control signal.

Feedback amplifier

Provided herein is a component package including a matching unit and a matching method thereof, the matching unit including: a substrate; a transmission line formed on the substrate, the transmission line being connected to a terminal of the component package; a bonding wire electrically connecting the transmission line and a central component; and a capacitor unit having a plurality of capacitors electrically connected with the transmission line by wiring connection, wherein an inductance of the matching unit is variable by adjusting a length of the bonding wire, and a capacitance of the matching unit is variable by increasing or reducing the number of capacitors electrically connected to the transmission line, of among the capacitors inside the capacitor unit, by extending or cutting off the wiring connection.

Component package including matching circuit and matching method thereof

Disclosed are a semiconductor device having a stable gate structure, and a manufacturing method thereof, in which a gate structure is stabilized by additionally including a plurality of gate feet under a gate head in a width direction of the gate head so as to serve as supporters in a gate structure including a fine gate foot having a length of 0.2 &#x3bc;m or smaller, and the gate head having a predetermined size. Accordingly, it is possible to prevent the gate electrode of the semiconductor device from collapsing, and improve reliability of the semiconductor device during or after the process of the semiconductor device.

Semiconductor device having stable gate structure and method of manufacturing the same

Provided is a colpitts quadrature voltage controlled oscillator capable of obtaining quadrature orthogonal signals using a quadrature combination between a base and a collector of each transistor, without using an additional circuit such as a coupled transistor, a coupled transformer, a multiphase RC filter, etc. Accordingly, since nonlinearity, increased phase noise, a decrease in the Q-factor of an LC resonator, and increased power consumption can be avoided, a colpitts quadrature voltage controlled oscillator that has low phase noise, low electric power consumption, and a compact size can be implemented.

Colpitts quadrature voltage controlled oscillator

Provided is an image sensor having a heterojunction bipolar transistor (HBT) and a method of fabricating the same. The image sensor is fabricated by SiGe BiCMOS technology. In the image sensor, a PD employs a floating-base-type SiGe HBT. A floating base of the SiGe HBT produces a positive voltage with respect to a collector during an exposure process, and the HBT performs a reverse bipolar operation due to the positive voltage so that the collector and an emitter exchange functions. The SiGe HBT can sense an optical current signal and also amplify the optical current signal. The image sensor requires only three transistors in a pixel so that the degree of integration can increase. The image sensor has an improved sensitivity of signals in the short wavelength region and a sensing signal has excellent linearity such that both a sensing mechanism and control circuit are very simple.

Image sensor having heterojunction bipolar transistor and method of fabricating the same

A capacitive-degeneration double cross-coupled voltage-controlled oscillator is provided. The capacitive-degeneration double cross-coupled voltage-controlled oscillator includes a main cross-coupled oscillating unit including an oscillation transistor pair cross-coupled to first and second output nodes of a resonating unit to perform an oscillation operation; and an auxiliary cross-coupled oscillating unit including a positive-feedback transistor pair cross-coupled to the first and second output nodes and the transistor pair of the main cross-coupled oscillating unit and a degeneration capacitance connected between emitters of the positive-feedback transistor pair so as to increase a negative resistance of the main cross-coupled oscillating unit. Accordingly, it is possible to increase a maximum attainable oscillation frequency and to decrease an input capacitance.

Capacitive-degeneration double cross-coupled voltage-controlled oscillator

Provided are a high-quality CMOS image sensor and a photo diode, which can be fabricated in sub-90 nm regime using nanoscale CMOS technology. The photo diode includes: a p-type well; an internal n-type region formed under a surface of the p-type well; and a surface p-type region including a highly doped p-type SiGeC epitaxial layer or a polysilicon layer deposited on a top surface of the p-type well over the internal n-type region. The image sensor includes: a photo diode including an internal n-type region and a surface p-type region; a transfer transistor for transmitting photo-charges generated in the photo diode to a floating diffusion node; and a driving transistor for amplifying a variation in an electric potential of the floating diffusion node due to the photo-charges. The image sensor further includes a floating metal layer for functioning as the floating diffusion node and applying an electric potential from a drain of the transfer transistor to a gate of the driving transistor.

High-quality CMOS image sensor and photo diode

Provided are a SiGe semiconductor device and a method of manufacturing the same. The method includes the steps of: forming a buried collector by doping impurity ions into a buried collector region formed on a substrate; forming a collector layer which is an active region and a collector electrode region by forming a Si epitaxial layer on the substrate having the buried collector; forming an isolation layer on the substrate and exposing the collector layer and the collector electrode region; forming a collector pad oxide layer on the collector electrode region; stacking a base epitaxial layer and a pad oxide layer on the substrate having the collector pad oxide layer and patterning the pad oxide layer; forming a first polycrystalline Si (poly-Si) layer on the patterned pad oxide layer; exposing at least a portion of the patterned pad oxide layer by etching the first poly-Si layer; depositing a metal layer on the first poly-Si layer to form a first silicide layer; forming an oxide layer on the substrate having the first silicide layer, and exposing a base-emitter junction and the collector electrode region; forming an emitter electrode and a collector electrode by depositing a second poly-Si layer on the exposed base-emitter junction and collector electrode region; and depositing a metal layer on the emitter and collector electrodes to form a second silicide layer, and forming a base terminal, an emitter terminal, and a collector terminal. In this method, base parasitic resistance can be reduced, an electrical short due to agglomeration caused by Ge can be prevented during the formation of the silicide layer, and the base-emitter junction can be protected using the pad oxide layer from external processes, thereby enhancing process stability and reliability.

SiGe semiconductor device and method of manufacturing the same

Provided is an LC resonance voltage-controlled oscillator (VCO) used for a multi-band multi-mode wireless transceiver. In order to generate a multi-band frequency, a capacitor bank and a switchable inductor are included in the LC resonance voltage-controlled oscillator. The LC resonance voltage-controlled oscillator employs an adjustable emitter-degeneration negative resistance cell in place of tail current sources in order to compensate for non-uniform oscillation amplitude caused by the capacitor bank and prevent the degradation of a phase noise due to the tail current sources. The LC resonance voltage-controlled oscillator includes an inductor providing an inductance element partially determining the frequency of an oscillation wave; a discrete capacitor bank providing a capacitance element partially determining the frequency of the oscillation wave and being discretely determined by a control bit signal; and a discrete negative resistance cell providing a negative resistance element that is discretely determined by the control bit signal, to keep the amplitude of the oscillation wave constant.

Multi-band LC resonance voltage-controlled oscillator with adjustable negative resistance cell

A germanium semiconductor device and a method of manufacturing the same are provided. The method includes the steps of: forming an isolation layer on a substrate using a shallow trench; forming a silicon-nitride layer on the substrate, and selectively etching the silicon nitride layer to expose source and drain regions; injecting impurities onto a surface of the substrate over the exposed source and drain regions using delta-doping to form a delta-doping layer; selectively growing a silicon germanium layer containing impurities on the delta-doping layer; rapidly annealing the substrate and forming source and drain regions by diffusion of the impurities; depositing an insulating layer on the entire surface of the substrate; etching the insulating layer and forming source and drain contact parts to be in contact with source and drain terminals; depositing metal over the insulating layer having the source and drain contact parts thereon and forming a metal silicide layer; and after forming the silicide layer, forming the source and drain terminals to be in contact with the silicide layer. Accordingly, the source and drain regions having a shallow junction depth may be ensured by forming the source and drain regions through annealing after delta-doping and selectively growing the silicon germanium layer containing high-concentration impurities. Also, the germanium silicide layer is stably formed by the silicon germanium layer grown in the source and drain regions, and thus contact resistance is lowered and driving current of the device is improved.

Germanium semiconductor device and method of manufacturing the same

Growing community of inventors

Daejeon, South Korea

Sang Heung Lee