Electronics and Telecommunications Research Institute

Konkuk University Industrial Cooperation Corp

Faculty of Science and Technology New University of Lisbon

Sang Hee Park

Chi Sun Hwang

Byoung Gon Yu

Him Chan Oh

Sung Min Yoon

Hye Yong Chu

Jeong Ik Lee

Ji Sun Kim

Kee Chan Park

Jae Eun Pi

Hyun Woo Song

Won Seok Han

Jong Hee Kim

O Kyun Kwon

Chun Won Byun

Byeong Hoon Kim

Young Gu Ju

Tao Ren

Min Woo Oh

Hong Kyun Leem

Seung Youl Kang

Yong Suk Yang

Sun Jin Yun

Min Ki Ryu

Lee Mi Do

Jae Heon Shin

Shin Hyuk Yang

Soon Won Jung

Sung Mook Chung

Yong Eui Lee

Kwang Ho Lee

Jun Ok Moon

Mi Kyung Kim

Hojun Ryu

Kyu Ha Baek

Sang Jo Lim

Ji Young Oh

Su Jin Park

Yong Shin Kim

Young Shin Kim

Hong Kyung Leem

Youn Kyung Kim

Joon Dong Kim

Elvira M C Fortunato

Rodrigo F P Martins

Ana R X Barros

Nuno F O Correia

Pedro M C Barquinha

Vitor M L Figueiredo

Jae Woo Jang

Disclosed is a dual display device having a vertical structure, in which a reflective display device and a self-emissive display device are formed on one substrate in a vertical structure so as to enable a reflective display or a self-emissive display according to a situation and provide a high resolution display. The dual display device having a vertical structure includes: a thin film transistor formed on a substrate; a white light emitting device formed on the thin film transistor: a reflection adjusting layer formed on the white light emitting device; and a color converting layer formed on the reflection adjusting layer.

Dual display device with vertical structure

Disclosed are a self-aligned thin film transistor capable of simultaneously improving an operation speed and stability and minimizing a size thereof by forming source and drain electrodes so as to be self-aligned, and a fabrication method thereof. The method of fabricating a thin film transistor according to an exemplary embodiment of the present disclosure includes: forming an active layer, a gate insulator, and a gate layer on a substrate; forming a photoresist layer pattern for defining a shape of a gate electrode on the gate layer; etching the gate layer, the gate insulator, and the active layer by using the photoresist layer pattern; depositing a source and drain layer on the etched substrate by a deposition method having directionality; and forming a gate electrode and self-aligned source electrode and drain electrode by removing the photoresist layer pattern.

Self-aligned thin film transistor and fabrication method thereof

Disclosed are a self-aligned thin film transistor controlling a diffusion length of a doping material using a doping barrier in a thin film transistor having a self-aligned structure and a method of manufacturing the same. The self-aligned thin film transistor with a doping barrier includes: an active layer formed on a substrate and having a first doping region, a second doping region, and a channel region; a gate insulating film formed on the channel region; a gate electrode formed on the gate insulating film; a doping source film formed on the first doping region and the second doping region; and a doping barrier formed between the doping source film and the first doping region and between the doping source film and the second doping region.

Self-aligned thin film transistor with doping barrier and method of manufacturing the same

Disclosed are an inverter, a NAND gate, and a NOR gate. The inverter includes: a pull-up unit constituted by a second thin film transistor outputting a first power voltage to an output terminal according to a voltage applied to a gate; a pull-down unit constituted by a fifth thin film transistor outputting a ground voltage to the output terminal according to an input signal applied to a gate; and a pull-up driver applying a second power voltage or the ground voltage to the gate of the second thin film transistor according to the input signal.

Inverter, NAND gate, and NOR gate

Provided is a semiconductor device using a p-type oxide semiconductor layer and a method of manufacturing the same. The device includes the p-type oxide layer formed of at least one oxide selected from the group consisting of a copper(Cu)-containing copper monoxide, a tin(Sn)-containing tin monoxide, a copper tin oxide containing a Cu&#x2014;Sn alloy, and a nickel tin oxide containing a Ni&#x2014;Sn alloy. Thus, transparent or opaque devices are easily developed using the p-type oxide layer. Since an oxide layer that is formed using a low-temperature process is applied to a semiconductor device, the manufacturing process of the semiconductor device is simplified and manufacturing costs may be reduced.

Semiconductor device and method of manufacturing the same

Disclosed is a dual mode function pixel that operates either in a first mode or in a second mode according to the intensity of a projected light to have a high visibility regardless of the intensity of projected light. The dual mode function pixel includes: a first membrane on which a self-luminescent element is formed; one or more membranes formed to surround the first membrane; and a lower layer formed below the first membrane and the one or more membranes to be spaced apart from the first membrane and the one or more membranes. The dual mode function pixel is controlled such that the self-luminescent element is driven either to emit light in a first mode operation or to selectively reflect a projected light by utilizing an interference of light generated between the first to one or more membranes and the lower layer in a second mode operation.

Dual mode function pixel and dual mode function display including the same

Disclosed is a method for manufacturing an oxide thin film transistor, including: forming a gate electrode on a substrate on which a buffer layer is formed; forming a gate insulation layer on an entire surface of the substrate on which the gate electrode is formed; forming an oxide semiconductor layer on the gate insulation layer; forming a first etch stop layer on the oxide semiconductor layer; forming a second etch stop layer on the first etch stop layer by an atomic layer deposition method; patterning the first etch stop layer and the second etch stop layer, or forming a contact hole, through which a part of the oxide semiconductor layer is exposed, in the first etch stop layer and the second etch stop layer; forming a source electrode and a drain electrode on the first etch stop layer and the second etch stop layer; and forming a passivation layer on the entire surface of the substrate on which the source electrode and the drain electrode are formed.

Method for manufacturing oxide thin film transistor

Disclosed is a DC voltage conversion circuit of a liquid crystal display apparatus, including: a main pumping circuit including a plurality of thin film transistors and configured to output voltage for driving a liquid crystal display apparatus when the plurality of thin film transistors are alternately turned on or off; and a switch control signal generator configured to control voltages applied to gates of the plurality of thin film transistors by inversion of a clock signal, in which each thin film transistor is turned on when positive gate-source voltage is applied thereto, and turned off when negative gate-source voltage is applied thereto.

DC voltage conversion circuit of liquid crystal display apparatus

Provided are a nonvolatile memory cell and a method of manufacturing the same. The nonvolatile memory cell includes a memory transistor and a driver transistor. The memory transistor includes a semiconductor layer, a buffer layer, an organic ferroelectric layer, and a gate electrode, which are disposed on a substrate. The driver transistor includes the semiconductor layer, the buffer layer, a gate insulating layer, and the gate electrode, which are disposed on the substrate. The memory transistor and the driver transistor are disposed on the same substrate. The nonvolatile memory cell is transparent in a visible light region.

Nonvolatile memory cell and method of manufacturing the same

Disclosed are an active matrix organic light emitting diode and a method for manufacturing the same. The active matrix organic light emitting diode includes: a substrate; a black matrix formed above a part of the substrate; at least one thin film transistor formed above the black matrix; a passivation film formed to entirely cover the at least one thin film transistor; a planarizing layer formed above the passivation film; a color filter formed above an upper part of the planarizing layer opposite to the position where the at least one thin film transistor is formed; and an organic light emitting diode formed above the color filter.

Active matrix organic light emitting diode

Provided are a method of manufacturing a transparent N-doped p-type ZnO semiconductor layer using a surface chemical reaction between precursors containing elements constituting thin layers, and a thin film transistor (TFT) including the p-type ZnO semiconductor layer. The method includes the steps of: preparing a substrate and loading the substrate into a chamber; injecting a Zn precursor and an oxygen precursor into the chamber, and causing a surface chemical reaction between the Zn precursor and the oxygen precursor using an atomic layer deposition (ALD) technique to form a ZnO thin layer on the substrate; and injecting a Zn precursor and an nitrogen precursor into the chamber, and causing a surface chemical reaction between the Zn precursor and the nitrogen precursor to form a doping layer on the ZnO thin layer.

Method of manufacturing P-type ZnO semiconductor layer using atomic layer deposition and thin film transistor including the P-type ZnO semiconductor layer

An organic light emitting diode (OLED) device is provided. The OLED device includes: a substrate; an anode formed on the substrate; a first organic thin layer formed on the anode; an organic emission layer formed on the first organic thin layer; a second organic thin layer formed on the organic emission layer; and a cathode formed on the second organic thin layer, wherein the first and second organic thin layers are formed in a single layer or a multi-layer, and at least a part of the first or second organic thin layer is doped with or formed of an insulator. The OLED device provides excellent durability, long life-time, and increased luminous efficiency by balanced charge injection caused by doping or stacking the insulator into or on the organic thin layer.

Organic light emitting diode device

Growing community of inventors

Daejeon, South Korea

Sang Hee Park