Electronics and Telecommunications Research Institute

Faculdade De Ciencias E Technologia Da Universidade Nova De Lisboa

Sang-Hee Ko Park

Chi-Sun Hwang

Elvira Maria Correia Fortunato

Rodrigo Ferrão De Paiva Martins

Pedro Miguel Cândido Barquinha

Nuno Filipe De Oliveira Correia

Ana Raquel Xarouco De Barros

Vitor Manuel Loureiro Figueiredo

The present invention relates to thin films comprising non-stoichiometric monoxides of: copper (OCu)with embedded cubic metal copper (Cu) [(OCu)+(Cu), wherein 0.05&#x2266;x&#x3c;1 and 0.01&#x2266;y&#x2266;0.9]; of tin (OSn)with embedded metal tin (Sn) [(OSn)+(Sn)wherein 0.05&#x2266;z&#x3c;1 and 0.01&#x2266;w&#x2266;0.9]; Cu&#x2014;Snalloys with embedded metal Sn and Cu [(O&#x2014;Cu&#x2014;Sn)+(Cu&#x2014;Sn)with 0&#x3c;&#x3b1;&#x3c;2 and 0&#x3c;&#x3b2;&#x3c;2, wherein 0.05&#x2266;a&#x3c;1 and 0.01&#x2266;b&#x2266;0.9]; and of nickel (ONi)with embedded Ni and Sn species [(O&#x2014;Ni)+(Ni&#x2014;Sn)with 0&#x3c;&#x3b1;&#x3c;2 and 0&#x3c;&#x3b2;&#x3c;2, wherein 0.05&#x2266;a&#x3c;1 and 0.01&#x2266;b&#x2266;0.9]; or combinations thereof, with amorphous, or nanocrystalline, or polycrystalline structure, either doped or not, with impurities such as zirconium, nitrogen or fluorine, for the fabrication of CMOS or TFT devices, with active matrices for LCD or OLED, fabrication of logic circuits, among others, using rigid or flexible substrates, wherein a protection layer, such as SU8 or the like, or silicon oxide or silicon nitride films are used for encapsulation.

P-type oxide alloys based on copper oxides, tin oxides, tin&#x2014;copper alloy oxides and metal alloy thereof, and nickel oxide, with embedded metals thereof, fabrication process and use thereof

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Daejon, South Korea

Sang-Hee Ko Park