Cheil Industries Inc.

Cheil Industry, Inc.

Sang-Hak Lim

Jin-Hee Bae

Taek-Soo Kwak

Sang-Kyun Kim

Hui-Chan Yun

Bong-Hwan Kim

Eun-Su Park

Hyun-Ji Song

Han-Song Lee

Seung-Hee Hong

Yoong-Hee Na

Go-Un Kim

Dong-il Han

Jin-Wook Lee

Jung-Kang Oh

Mi-young Kim

Kwen-Woo Han

Byeong-Gyu Hwang

Bo-Sun Kim

Jin-Woo Seo

Jong-Seob Kim

Wan-Hee Lim

Jong-Dae Jeon

Disclosed is modified hydrogenated polysiloxazane prepared by reacting hydrogenated polysiloxazane with a silane compound selected from polysilane, polycyclosilane, and a silane oligomer. The modified hydrogenated polysiloxazane has a small mole ratio of nitrogen atoms relative to silicon atoms and may remarkably deteriorate a film shrinkage ratio when included in a composition for forming a silica-based insulation layer to form a silica-based insulation layer.

Modified hydrogenated polysiloxazane, composition comprising same for forming silica-based insulation layer, method for preparing composition for forming

Disclosed is a composition for a silica-based insulation layer including hydrogenated polysilazane or hydrogenated polysiloxzane, wherein a concentration of a cyclic compound having a weight average molecular weight of less than 400 is less than or equal to 1,200 ppm. The composition for a silica-based insulation layer may reduce a thickness distribution during formation of a silica-based insulation layer, and thereby film defects after chemical mechanical polishing (CMP) during a semiconductor manufacturing process may be reduced.

Composition for forming silica-based insulating layer, method for preparing composition for forming silica-based insulating layer, silica-based insulating layer, and method for manufacturing silica-based insulating layer

A method of preparing a gap filler agent includes adding a halosilane to a basic solvent, and, to the basic solvent and the halosilane, adding ammonia in an amount of about 50 to about 70 parts by weight based on 100 parts by weight of the halosilane at a rate of about 1 g/hr to about 15 g/hr.

Process of preparing a gap filler agent, a gap filler agent prepared using same, and a method for manufacturing semiconductor capacitor using the gap filler agent

A composition for forming silica-based insulation layer includes a hydrogenated polysiloxazane including a moiety represented by the following Chemical Formula 1 and a moiety represented by the following Chemical Formula 2, and having a chlorine concentration of about 1 ppm or less: 

Composition for forming silica based insulating layer, method for manufacturing composition for forming silica based insulating layer, silica based insulating layer and method for manufacturing silica based insulating layer

A composition for forming a silica layer, a method of manufacturing the composition, a silica layer prepared using the composition, and a method of manufacturing the silica layer, the composition including hydrogenated polysilazane, hydrogenated polysiloxazane, or a combination thereof, wherein a concentration of a sum of hydrogenated polysilazane and hydrogenated polysiloxazane having a weight average molecular weight, reduced to polystyrene, of greater than or equal to about 50,000 is about 0.1 wt % or less, based on a total amount of the hydrogenated polysilazane and hydrogenated polysiloxazane.

Composition for forming a silica layer, method of manufacturing the composition, silica layer prepared using the composition, and method of manufacturing the silica layer

A filler for filling a gap includes a compound represented by the following Chemical Formula 1.SiNOH.&#x2003;&#x2003;[Chemical Formula 1]In Chemical Formula 1, a, b, c, and d represent relative amounts of Si, N, 0, and H, respectively, in the compound, 1.96&#x3c;a&#x3c;2.68, 1.78&#x3c;b&#x3c;3.21, 0&#x2266;c&#x3c;0.19, and 4&#x3c;d&#x3c;10.

Filler for filling a gap, method of preparing the same and method of manufacturing semiconductor capacitor using the same

A filler for filling a gap includes a hydrogenated polysiloxazane having an oxygen content of about 0.2 to about 3 wt %. A chemical structure of the hydrogenated polysiloxazane includes first, second, and third moieties represented by the following respective Chemical Formulas 1-3:  The third moiety is on a terminal end of the hydrogenated polysiloxazane, and an amount of the third moiety is about 15 to about 35% based on a total amount of Si&#x2014;H bonds in the hydrogenated polysiloxazane.

Filler for filling a gap and method for manufacturing semiconductor capacitor using the same

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Uiwang-si, South Korea

Sang-Hak Lim