Samsung Electronics Co., Ltd.

Sang-gyun Woo

Sang-jun Choi

Hyun-woo Kim

Kwang-sub Yoon

Sook Jin Lee

Dong-won Jung

Si-hyeung Lee

Yool Kang

Joo-tae Moon

Ki-young Kwon

Hyun-Woo Kim

Jeong-hee Chung

Sung-ho Lee

Woo-Sung Han

Ki-Yong Song

Kwang-soo No

Sung-chul Lim

Ho-young Kang

Si-hyueng Lee

A resist composition includes a photoacid generator (PAG) and a photosensitive polymer. The photosensitive polymer is polymerized with (a) at least one of the monomers having the respective formulae: where R1 and R2 are independently a hydrogen atom, alkyl, hydroxyalkyl, alkyloxy, carbonyl or ester, and x and y are independently integers from 1 to 6, and (b) at least one of a (meth)acrylate monomer, a maleic anhydride monomer, and a norbornene monomer.

Resist composition comprising photosensitive polymer having lactone in its backbone

This invention is directed to a coating composition used for original equipment manufacturing or refinishing uses in the automotive industry, which coating composition utilizes an acrylic polymer which contains substituted or unsubstituted exomethylene lactones or lactams as a comonomer.

A photosensitive copolymer has a weight-average molecular weight of 3,000 to 100,000 and is represented by the following formula:wherein Ris a hydrogen atom or methyl, Ris an acid-labile tertiary alkyl group, and m/(m+n) is 0.5 to 0.8.

Photosensitive polymer having cyclic backbone and resist composition containing the same

Polymer having butadiene sulfone repeating unit and resist composition comprising the same

A method for forming a fine pattern in a semiconductor substrate, by coating a target layer to be etched on a semiconductor substrate with a resist composition including at least one compound capable of forming a photoresist pattern by a photolithography process, and a free radical initiator. The free radical initiator is capable of being decomposed by a thermal process at a temperature equal to or higher than the glass transition temperature of the at least one compound. A lithography process is performed on the resist compound layer to form a photoresist pattern. The resist compound layer having the photoresist pattern formed therein is heated to a temperature equal to or higher than the glass transition temperature of the at least one compound, and wherein a partial cross-linking reaction in the resist composition occurs.

Methods for forming line patterns in semiconductor substrates

Provided are a fluorine-containing photosensitive polymer having a hydrate structure and a resist composition including the photosensitive polymer. The photosensitive polymer has an average molecular weight of about 3,000-100,000 with a repeating unit including a group having one of structural formulae below:

Fluorine-containing photosensitive polymer having hydrate structure and resist composition comprising the same

Photosensitive polymers and resist compositions comprising the photosensitive polymers

Ether monomers and polymers having multi-ring structures, and photosensitive polymers and resist compositions obtained from the same

Photosensitive monomer, photosensitive polymer and chemically amplified resist composition comprising lactone group having acid-labile protecting group

Photosensitive polymer containing Si, Ge or Sn and resist composition comprising the same

A photosensitive polymer which maintains transparency even when exposed to a short-wavelength light source of 193 nm or below, exhibits improved adhesiveness to a substrate, improved contrast and improved resistance to dry etching. The photosensitive polymer includes a first monomer which is alicyclic hydrocarbon carboxylate having an acid-labile C to C tertiary alicyclic hydrocarbon group as a substituent, and a second monomer which is capable of free radical polymerization.

Photosensitive polymer

Photosensitive polymer and resist composition containing the same

Resist composition comprising photosensitive polymer having loctone in its backbone

Alicyclic photosensitive polymer, resist composition containing the same and method of preparing the resist composition

A photosensitive compound, and a chemically amplified photoresist composition containing the photosensitive compound, maintain transparency even when exposed to a short-wavelength light source of 193 nm or below, and exhibit improved adhesion to an underlying film or substrate, improved wettability to a developing solution and improved resistance to dry etching. The photosensitive compound includes a carboxylic acid protected with a protective group capable of being deprotected with an acid and has a hydroxy at position No. 3 substituted with a hydrophillic aliphatic compound or a hydrophillic alicyclic compound.

Photosensitive lithocholate derivative and chemically amplified photoresist composition containing the same

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Suwon, South Korea

Sang-gyun Woo