Lg Philips Lcd Co., Inc.

Lg Display Co., Ltd.

Sang Gul Lee

Jong Hoon Yi

Jeong Hyun Kim

Sang Hun Oh

Soo Mahn Kim

Disclosed is a display device including a substrate including display and non-display areas, a first thin-film transistor located in the non-display area, and second and third thin-film transistors located in the display area. The first thin-film transistor includes a first semiconductor pattern, a first gate electrode overlapping the first semiconductor pattern, and first source and first drain electrodes connected to the first semiconductor pattern. The second thin-film transistor includes second and third semiconductor patterns including a first oxide semiconductor, a second gate electrode overlapping the second semiconductor pattern, a third gate electrode overlapping the third semiconductor pattern, and second source and second drain electrodes connected to the second and third semiconductor patterns. The third thin-film transistor includes a fourth semiconductor pattern including a first oxide semiconductor, a fourth gate electrode overlapping the fourth semiconductor pattern, and third source and third drain electrodes connected to the fourth semiconductor pattern.

Display device

Barrier lines are formed on a substrate to define column areas between adjacent barrier lines. A color filter is then formed using continuous ink ejection in at least one of the column areas.

Liquid crystal display device with an ink-jet color filter and process for fabricating the same

The present invention is directed towards TFT-LCD devices and methods to manufacture the same. The devices of the present invention includes a gate electrode structure including an active layer and agate insulator, a protective layer formed over and along the sides of the gate electrode structure, contact layers formed on sides of the gate electrode structure and on a substrate, and source and drain electrodes on the contact layers.

Reflective liquid crystal display device having a TFT as a switching element and method for fabricating the same

Fabrication of a polysilicon TFT having a lightly doped drain or offset structure. Fabrication includes forming a semiconductor layer, a gate insulating film, and a gate electrode on a substrate. Then, forming lightly doped impurity regions in the semiconductor layer on both sides of the gate electrode. Next, forming an insulating film having a thickness that gradually becomes thinner away from the gate electrode. Then, forming heavily doped impurity regions in the lightly doped impurity regions in the semiconductor layer on both sides of the gate, resulting in regions with continuously varied impurity concentrations.

Growing community of inventors

Seoul, South Korea

Sang Gul Lee