Ibule Photonics

Ibule Photonics Co., Ltd.

Ibule Humanscan Co., Ltd.

Idbule Photonics Co., Ltd.

Sang-Goo Lee

Min-Chan Kim

Sung-Min Rhim

Jaehwan Eun

Min-Chul Shin

Jin-Yong Kim

Young-Gwan Ko

Ho Sang Jung

Wha-Young Lee

Sungmin Rhim

In-Kyu Song

Hyeongjoon Kim

Byung-Ju Choi

Minchan Kim

Gil-Seon Kang

Byungju Choi

Su-Han Yu

Sea-Hoon Kim

Hyeong-Joon Kim

The present invention relates to a ferroelectric ceramic compound having the composition of the following formula: s[L]&#x2212;x[P]y[M]z[N]p[T], a ferroelectric ceramic single crystal, and preparation processes thereof. The ferroelectric ceramic compound and the single crystal according to the present invention are relaxor ferroelectrics having high piezoelectricity, a high electromechanical coefficient and a high electrooptical coefficient, and are useful for manufacturing tunable filters for radio communication, optical communication devices, surface acoustic wave devices, and the like. Particularly, the process of preparing the single crystal according to the present invention enables preparation of a single crystal having a diameter of 5 cm or greater and a single crystal wafer with uniform composition. In the formula, [P] is lead oxide, [M] is magnesium oxide or zinc oxide, [N] is niobium oxide, [T] is titanium oxide, [L] is one selected from the group consisting of lithium tantalate or lithium niobate, lithium, lithium oxide, platinum, indium, palladium, rhodium, nickel, cobalt, iron, strontium, scandium, ruthenium, copper, yttrium, and ytterbium or mixtures thereof, and x, y, z, p and s are defined as 0.55&#x3c;x&#x3c;0.60, 0.09&#x3c;y&#x3c;0.20, 0.09&#x3c;z&#x3c;0.20, 0.01&#x3c;p&#x3c;0.27 and 0.01&#x3c;s&#x3c;0.1, respectively.

Ferroelectric ceramic compound, a ferroelectric ceramic single crystal, and preparation processes thereof

A film structure of a ferroelectric single crystal which can be beneficially used in the fabrication of high-performance electric or electronic parts or devices is prepared by adhering a ferroelectric single crystal plate to a substrate by a conductive adhesive or metal layer, the ferroelectric single crystal plate being polished before or after the adhesion with the substrate.

Method for preparing film structure comprising ferroelectric single crystal layer

A film structure of a ferroelectric single crystal which can be beneficially used in the fabrication of high-performance electric and electronic parts and devices is prepared by forming an electrode layer having a perovskite crystal structure on a substrate made of a silicon or ferroelectric single crystal optionally polished to have a off-axis crystal structure, and epitaxially growing a layer of a ferroelectric single crystal thereon by pulsed laser deposition (PLD) or metallorganic chemical vapor deposition (MOCVD).

Method for preparation of ferroelectric single crystal film structure using deposition method

An ultrasonic probe comprising a piezoelectric element, a first electrode formed on a substantial portion of a first main face, a first side face and a part of a second main face of the piezoelectric element, and a second electrode formed on a substantial portion of a second main face, a second side face and a part of a first main face of the piezoelectric element, the two electrodes being isolated from each other by two grooves formed on the first and second main faces of the piezoelectric element, in a manner parallel to the side edges of the piezoelectric element, respectively, has good vibration and probing properties.

Ultrasonic probe and method for the fabrication thereof

Surface acoustic wave filter using novel piezoelectric single crystal substrate

A ferroelectric single crystal having the composition of formula (I) has a high Piezoelectric constant together with good electromechanical and electrooptical properties and it can be prepared in a size of 5 cm in diameter or greater, useful for preparing various devices: x(A)y(B)z(C)-p(P)n(N); (I) wherein, (A) is Pb(Mg&frac13; Nb&frac23;)O3 or Pb(Zn&frac13;Nb&frac23;)O3, (B) is PbTiO3, (C) is LiTaO3, (P) is a metal selected from the group consisting of Pt, Au, Ag, Pd and Rh, (N) is an oxide of a metal selected from the group consisting of Ni, Co, Fe, Sr, Sc, Ru, Cu and Cd, x is a number in the range of 0.65 to 0.98, y is a number in the range fo 0.01 to 0.34, z is a number in the range of 0.01 to 0.1, and p and n are each independently a number in the range of 0.01 to 5.

Ferroelectric single crystal wafer and process for the preparation thereof

Composite metal material, preparation thereof and photocatalytic process using same

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Siheung-si, South Korea

Sang-Goo Lee