Samsung Electronics Co., Ltd.

Sang-Gil Shin

Oh-Dal Kwon

Min-Sung Kim

Sun-Tae Jung

Kyung-woo Kang

Jeong-Hwan Song

Se-Yoon Kim

Sang-Wook Yoo

Bang-weon Lee

Seung-Wan Lee

Shin-Young Yoon

Young-Gyu Son

Disclosed is a variable alignment-type optical fiber block in which alignment of waveguides can be changed according to temperature. The optical fiber block includes: a substrate having a receiving section formed at one end of the substrate, the receiving section having a predetermined volume; a ferrule seated in the receiving section, the ferrule having a hole in which an optical fiber is inserted; a first expandable block disposed between one side surface of the ferrule and an inner wall surface of the receiving section, which are opposed to each other, the first expandable block having a first thermal expansive coefficient; and, a second expandable block disposed between the other side surface of the ferrule and another inner wall surface of the receiving section, which are opposed to each other, the second expandable block having a second thermal expansive coefficient.

Variable alignment-type optical fiber block

There is provided a PLC module formed by depositing the core as an optical signal transmission medium and the clad surrounding the core on a semiconductor substrate, wherein a heating line is attached to the lower surface of the PLC and generates heat to the PLC from externally received power. An insulation layer is coated on the lower surface of the PLC with the heating line fixed thereto. Therefore, the direct attachment of the heating line to the lower surface of the PLC minimizes heat loss.

Integrated heat transfer device for PLC module

There is provided an apparatus for fabricating an apodized fiber grating. In the apodized fiber grating fabricating apparatus, a UV (Ultraviolet) laser emits a UV laser beam, a beam splitter splits the UV laser beam emitted from the UV laser into two beams, a plurality of mirrors form light paths to concurrently project the split beams onto an optical fiber from two directions by reflecting the split beams, a phase mask passes the reflected beams therethrough in such a way to form gratings in the optical fiber in a predetermined period, a first blocking device is disposed between the phase mask and one of the mirrors, progressively blocks one of the two beams from being projected toward the optical fiber from one direction, and provides apodization to the formed gratings, and a second blocking device, which is mobile and opposite to the first blocking device with respect to the optical fiber, progressively blocks the other beam from being projected toward the optical fiber from another direction and provides apodization to the formed gratings, so that an average refractive index variation is constant across the whole gratings.

Apparatus for fabricating apodized fiber grating

A memory device having normal and extended data out (EDO). modes includes an array of memory cells arranged in plurality of rows and columns, first and second data latches which store data, a column address input which receives a column address signal, and a column address strobe input which receives a column address strobe signal. First latch control means, responsive to said column address input and to the column address strobe input, electrically couples one memory cell in the array of memory cells and the first data latch when a column address signal is asserted at the column address input and electrically decouples the one memory cell and the first data latch when a column address strobe signal is asserted at the column address strobe input, thereby latching data present in the one memory cell prior to assertion of the column address strobe signal in the first data latch. Second latch control means, responsive to the column address strobe input, electrically couples the first data latch and the second data latch when a column address strobe signal is asserted at the column address strobe input and electrically decouples the first data latch and the second data latch when a column address strobe signal is deasserted at the column address strobe input, thereby latching data present in the first data latch prior to deassertion of the column address strobe signal in the second data latch.

Memory device with fast extended data out (EDO) mode and methods of

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Yongin-shi, South Korea

Sang-Gil Shin