Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Sk Telecom Company, Ltd.

Sang Gil Lee

Hyun Woo Lee

Sung Kook Park

Seok Hoon Kim

Pan Kwi Park

Woo Chul Jung

Kwang Seok Park

Nam Kyu Cho

Ki Young Kim

Sang Il Kim

Sang Hoon Lee

Tae Woo Lim

Yang Xu

Seong Gyu Kwon

Dong Suk Shin

Yong Seung Kim

Si Hyung Lee

Tae Seok Jang

Byung Gon Kum

Sang Wook Ha

Byoung Woo Lim

Il Kyu Kim

A semiconductor device includes a first active pattern having a first lower pattern and a first sheet pattern on the first lower pattern. First gate structures include a first gate electrode. A second active pattern includes a second lower pattern. A second sheet pattern is on the second lower pattern. Second gate structures include a second gate electrode that surrounds the second sheet pattern. A first source/drain recess is between adjacent first gate structures. A second source/drain recess is between adjacent second gate structures. A first source/drain pattern extends along the first source/drain recess. A first silicon germanium filling film is on the first silicon germanium liner. A second source/drain pattern includes a second silicon germanium liner extending along the second source/drain recess. A second silicon germanium filling film is on the second silicon germanium liner.

Multi gate semiconductor device

A semiconductor device including first fin-shaped patterns in a first region of a substrate and spaced apart from each other in a first direction, second fin-shaped patterns in a second region of the substrate and spaced apart from each other in a second direction, a first field insulating film on the substrate and covering sidewalls of the first fin-shaped patterns, a second field insulating film on the substrate and covering sidewalls of the second fin-shaped patterns, a first source/drain pattern on the first field insulating film, connected to the first fin-shaped patterns, and including a first silicon-germanium pattern, and a second source/drain pattern on the second field insulating film, connected to the second fin-shaped patterns, and including a second silicon-germanium pattern, the second source/drain pattern and the second field insulating film defining one or more first air gaps therebetween may be provided.

Semiconductor device

A display device includes a first substrate including a display area and a non-display area which is outside the display area; a first gate signal line and a second gate signal line each on the non-display area of the first substrate; a connection electrode which is on the non-display area of the first substrate and connects the first gate signal line and the second gate signal line to each other; and a static electricity prevention pattern which is on the non-display area of the first substrate and on the connection electrode.

Display device and method for manufacturing the same

An 'LED' driving circuit comprises an 'LED' driving voltage generator which generates an &#x201c;LED&#x201d; driving voltage, a pulse width modulation (&#x201c;PWM&#x201d;) control unit which outputs a &#x201c;PWM&#x201d; signal having a predetermined duty ratio, and a main switching unit which controls the driving voltage applied to the &#x201c;LEDs&#x201d; in accordance with the &#x201c;PWM&#x201d; signal. Further, the &#x201c;PWM&#x201d; control unit comprises a controller including an error amplifier which detects an error between a reference voltage and a driving voltage and amplifies the detected error, an oscillator which outputs a pulse signal having a predetermined oscillation frequency, and a comparator which compares the pulse signal output from the oscillator with an output voltage from the error amplifier to generate a &#x201c;PWM&#x201d; signal; and a high frequency damper connected to the main switching unit to prevent malfunction of the controller due to noise. A backlight unit and liquid crystal display incorporate the &#x201c;LED&#x201d; driving circuit.

Liquid crystal display and backlight unit using light emitting diode driving circuit

A method for quickly searching a cell at a mobile station by using a synchronization channel structure of a forward link in a code division multiple access system which operates by an asynchronous mode between base stations is provided. In the method, a predetermined starting point among a plurality of locations of sync channel codes in a frame with respect to a base station having a minimal channel loss is obtained. Long code group and frame sync information at the mobile station are obtained based on outputs of a matched filter every mini slot clock location for one frame time after a starting point of a current mini slot. A long code based on the obtained long code group and frame sync information obtained is detected wherein the long code is used for band-spreading of a forward link by a current base station.

Cell searching method in asynchronous wideband code division multiple access system

Growing community of inventors

Seoul, South Korea

Sang Gil Lee