Samsung Electronics Co., Ltd.

Sang-gil Lee

Seung-hun Lee

Min-Hee Choi

Seok-hoon Kim

Edward Namkyu Cho

Cho-eun Lee

A semiconductor device includes: a fin-type active region extending on a substrate in a first direction that is parallel to an upper surface of the substrate; and a source/drain region in a recess region extending into the fin-type active region, wherein the source/drain region includes: a first source/drain material layer; a second source/drain material layer on the first source/drain material layer; and a first dopant diffusion barrier layer on an interface between the first source/drain material layer and the second source/drain material layer.

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Ansan-si, South Korea

Sang-gil Lee