Skhynix Inc.

Sang-Geun Bae

Minsoon Hwang

A memory system includes a memory device; and a memory controller including: a code signal generator configured to generate first code signals; a comparison voltage selector configured to select as a comparison voltage reference voltage candidates in order of a voltage level in response to the first code signals; a delay component configured to generate second code signals by delaying the first code signals; a reference voltage candidate selector configured to select as a reference voltage candidate the reference voltage candidates in the order of a voltage level in response to the second code signals; and a detector configured to generate a flag signal by comparing the comparison voltage and the reference voltage candidate alternately provided from the comparison voltage selector and the reference voltage candidate selector.

Memory system performing reference voltage training operation and operating method of memory system

Provided is a semiconductor controller that includes: an input buffer for comparing a data signal received from the outside with a reference voltage and storing the data signal; and a reference voltage control unit for generating the reference voltage corresponding to a protocol condition of the received data signal set between a first protocol condition and a second protocol condition and providing the reference voltage to the input buffer.

Growing community of inventors

Gyeonggi-do, South Korea

Sang-Geun Bae