Samsung Display Co., Ltd.

Sang Gap Kim

Yu-Gwang Jeong

Sang Ho Park

Yong Su Lee

Chong Sup Chang

Yoon Ho Khang

Hyun Jae Na

Myoung Geun Cha

Se Hwan Yu

Dong Jo Kim

Jae Neung Kim

Dae Ho Kim

A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

Thin film transistor, thin film transistor array panel including the same, and method of manufacturing the same

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Seoul, South Korea

Sang Gap Kim