Samsung Electronics Co., Ltd.

Sang Eui Lee

Kenji Takai

Eun Joo Jang

Shin Ae Jun

Hyo Sook Jang

Hyun A Kang

In-Taek Han

Eigo Miyazaki

Do Yoon Kim

Daiki Minami

Soo-Kyung Kwon

A plating solution including a metal salt, a hydrophilic fullerene, and water, a metal composite material including a hydrophilic fullerene and a method of manufacturing the same, and a wire, a flexible printed circuit (FPC), and an electronic device including the metal composite material.

Plating solution and metal composite and method of manufacturing the same

A polishing slurry including a composite including a hydrophilic fullerene and an ionic compound, a method of manufacturing the same, and a method of manufacturing a semiconductor device.

Polishing slurry, method of manufacturing the same, and method of manufacturing semiconductor device

A case including a case main body, a matrix including a semiconductor nanocrystal, the matrix disposed in the case main body, and a sealant disposed on the case main body, wherein the sealant has a gas permeability of about 1 cubic centimeter at standard temperature and pressure per centimeter per meter squared per day per atmosphere or less and a tensile strength of about 5 megaPascals or more, and wherein the semiconductor nanocrystal is a Group II-VI compound, a Group III-V compound, a Group IV-VI compound, a Group IV element, a Group IV element, a Group IV compound, or a combination thereof.

Case including semiconductor nanocrystals, and optoelectronic device including the same

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Seoul, South Korea

Sang Eui Lee