Hyundai Electronics Industries Co. Ltd.

Sang Do Lee

Hyeon Soo Kim

Generally, after etching process for gate electrode patterning, oxidation process is performed to compensate for etching damage. There is provided a method for forming a gate electrode of a semiconductor device, which prevents the metal layer comprised of the gate electrode for being oxidized in such an oxidation process. In the present invention, a polysilicon layer is etched to form a gate electrode pattern and re-oxidation process is performed to compensate for the etching damage. After this, an inter-layer insulating layer is formed over the entire structure and partially removed so as to expose the polysilicon layer. A part of the polysilicon layer is then selectively removed to form an opening in the inter-layer insulating layer. Here, the other part of the polysilicon layer, which will be connected to a metal layer later, is exposed through the opening. The metal layer is then buried within the opening to complete the formation of the gate electrode made of poly-metal structure.

Growing community of inventors

Ichon-shi, South Korea

Sang Do Lee