Skhynix Inc.

Jusung Engineering Co., Ltd.

Sang-Do Lee

Kee-Jeung Lee

Jae-Min Lee

Jeong-Yeop Lee

Jong-Bum Park

Jun-Soo Jang

Dong-Su Park

Hae-Jung Lee

Chul-Joo Hwang

Kyung-Bo Ko

A method for fabricating a semiconductor device includes: forming a mold stack pattern including a plurality of openings in an upper portion of a substrate and including a mold layer and a supporter layer which are stacked; forming a bottom electrode layer filling the plurality of the openings and covering the supporter layer; forming a filler portion disposed inside the plurality of the openings, a barrier portion extended upwardly from the filler portion, and an electrode cutting portion exposing a surface of the supporter layer by selectively etching the bottom electrode layer; forming a supporter by using the barrier portion as an etch barrier and etching the supporter layer exposed by the electrode cutting portion; selectively removing the barrier portion to form a hybrid pillar-type bottom electrode disposed inside the plurality of the openings; and removing the mold layer.

Semiconductor device and method for fabricating the same

A semiconductor device includes an active body having two sidewalls facing each other in a lateral direction, a junction formed in a sidewall of the two sidewalls, a dielectric layer having an open portion to expose the junction and covering the active body, a junction extension portion having a buried region to fill the open portion, and a bit line coupled to the junction extension portion.

Semiconductor device with buried bit line and method for fabricating the same

An apparatus includes: a process chamber for treating a substrate; a susceptor in the process chamber; a supporting frame over the susceptor; and at least one wire connected to the supporting frame.

Substrate supporting means having wire and apparatus using the same

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Gyeonggi-do, South Korea

Sang-Do Lee