Hynix Semiconductor Inc.

Korea Advanced Institute of Science and Technology

Sang Deok Kim

Sang Wook Park

Yong Keun Chang

Kyoung Sik Han

Hee W Ryu

A method of manufacturing semiconductor devices includes forming a dielectric interlayer over a semiconductor substrate, wherein a wet etch rate (WER) is faster in an upper part of the dielectric interlayer than in a lower part of the dielectric interlayer, forming trenches in the dielectric interlayer, performing a cleaning process to make a width of an opening portion in an upper part of each of the trenches wider than a width of an opening portion in lower part of the trench, and filling the trenches with a metal layer.

Method of manufacturing semiconductor devices

Disclosed are a method of manufacturing a semiconductor device and a structure of a semiconductor device. A method of forming a passivation film of a semiconductor device comprises the steps of forming metal wires on a semiconductor substrate, forming a buffer oxide film being a first passivation film on the metal wires, wherein the buffer oxide film can mitigate damage by plasma, forming a high density plasma film being a second passivation film on the buffer oxide film, and forming a third passivation film on the second passivation film. According to the present invention, it is possible to significantly reduce the leakage current between a select source line and a common source line.

Passivation film of semiconductor device

A method of manufacturing a flash memory device wherein a stacked structure of an oxide and nitride or the reverse is applied to insulation spacers provided on sidewalls of gates for forming source/drain regions. After completing the source/drain regions, spacers are formed on sidewalls of the gates by using an oxide film as a contacting buffer, thus minimizing the interference between gates and reducing the stress to cells, overcoming the disturbance of threshold voltage.

Method of manufacturing a flash memory device

Method for forming passivation film of semiconductor device and structure of passivation film of semiconductor device

Provided is a method of manufacturing a semiconductor device. According to the present invention, it is possible that an interlayer insulating film is planarized by forming the interlayer insulating film using multiple simultaneous deposition-and-etch processes without carrying out a subsequent planarization process. In addition, smoothness can be variably controlled by adjusting the deposition and etch rate.

Method of manufacturing semiconductor device

A bubble column reactor with at least one radial dispersing device to radially sparge a gas phase into a liquid phase in the bubble column. The reactor comprises four parts: bubble column body 4, radial dispersing device, a mounting plate, and a head plate. The radial dispersing device is employed to radially disperse the gas phase into the liquid phase. It has a porous wall and an outer threaded port 2 and is vertically installed in the bubble column 4. A mounting plate is employed to allow the dispersing devices 1 to be vertically installed. A head plate 8 is employed to cover the bubble column 4 and have ports 9 for sampling, exhaust gas and sensors. The bubble column reactor according to this invention provides advantages in that it can generate small bubble sizes, thus increase the residence time of the gas phase even under relatively high gas velocities and also relatively high viscosities of the liquid reactant, thereby improving the mass transfer performance of the reactor.

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Seoul, South Korea

Sang Deok Kim