Electronics and Telecommunications Research Institute

Sk Biopharmaceuticals Co., Ltd.

Sang Chul Lim

Jae Bon Koo

Soon-Won Jung

Chan Woo Park

Hye Yong Chu

Bock Soon Na

Sang Seok Lee

Kyoung Ik Cho

Seong Hyun Kim

Ji-Young Oh

Dae Won Lee

Yong Suk Yang

Dong Ho Lee

Hyun Seok Lee

Hui Ho Kim

Moo Yong Uhm

Zin Sig Kim

Chi-Sun Hwang

Gi Heon Kim

Doo Hyeb Youn

Jung Hun Lee

Jeong Ik Lee

Minseok Kim

Yong Hae Kim

Yoon Ho Song

Kyung Soo Suh

In-Kyu You

Ju Young Lee

Hojun Ryu

Jong-Heon Yang

Seongdeok Ahn

Taehyoung Zyung

Jae-Eun Pi

Jonghee Lee

Min Ki Ryu

Su Jae Lee

Nahm Ryune Cho

Seong-Hyun Kim

Tae Gon Kim

Se Il Lee

Ji Ho Youk

Chan Hoe Ku

Se Ii Lee

Provided is a method for fabricating an electronic device, the method including: preparing a carrier substrate including an element region and a wiring region; forming a sacrificial layer on the carrier substrate; forming an electronic element on the sacrificial layer of the element region; forming a first elastic layer having a corrugated surface on the first elastic layer of the wiring region; forming a metal wirings electrically connecting the electronic element thereto, on the first elastic layer of the wiring region; forming a second elastic layer covering the metal wirings, on the first elastic layer; forming a high rigidity pattern filling in a recess of the second elastic layer above the electronic element so as to overlap the electronic element, and having a corrugated surface; forming a third elastic layer on the second elastic layer and the high rigidity pattern; and separating the carrier substrate.

Electronic device and method for fabricating the same

Provided is an electronic circuit including a substrate having a flat device region and a curved interconnection region. A conduction line may extend along an uneven portion in the interconnection region and may be curved. The uneven portion and the conductive line may have a wavy shape. An external force applied to the electronic circuit may be absorbed by the uneven portion and the conductive line. The electronic device may not be affected by the external force. Therefore, functions of the electronic circuit may be maintained. A method of fabricating an electronic circuit according to the present invention may easily adjust areas and positions of the interconnection region and the device region.

Electronic circuit and method of fabricating the same

Provided is a display device and a method of manufacturing the same. The display device includes a reflective display part including a first cathode electrode and a first anode electrode and a liquid crystal layer, a light emitting display part including a second cathode electrode and a second anode electrode and a light emission film, and a thin film transistor part being electrically connected to the first and second anode electrodes. The light emitting display part further includes a bank disposed on one side of the second anode electrode between the second anode electrode and the light emission film.

Display device and method of manufacturing the same

Disclosed is a method for the preparation of carbamic acid (R)-1-aryl-2-tetrazolyl-ethyl esters, comprising the enantioselective enzyme reduction of a 1-aryl-2-tetrazolyl-ethyl ketone to form a (R)-1-aryl-2-tetrazolyl-ethyl alcohol and the carbamation of said alcohol.

Method for preparation of carbamic acid (R)-1-aryl-2-tetrazolyl-ethyl ester

A method for manufacturing a planarized printed electronic device includes performing a surface treatment on a base substrate to provide a surface treated base substrate and facilitate release during a delamination process; printing a layer having an electrode pattern onto the surface-treated base substrate; forming an organic material layer comprised of an organic material on the base substrate on which the printed layer is printed such that the printed layer is embedded therein to provide an embedded layer; providing a target substrate onto which the embedded layer is to be transferred; laminating by sandwiching the embedded layer between the base substrate on which the embedded layer is formed and the target substrate; delaminating by detaching the embedded layer from the base substrate; and transferring the printed layer onto the target substrate to provide a planarized printed layer. Large areas with reduced defects due to surface roughness are possible.

Method of manufacturing a planarizing printed electronic device

Provided is a method for fabricating a flexible display device. The method includes attaching a shape memory alloy film memorizing a shape thereof as a curved shape at a shape memory temperature or lower to a flexible substrate at a temperature higher than the shape memory temperature, forming a display device on the flexible substrate, and returning the shape memory alloy to the curved shape to remove the shape memory alloy film from the flexible substrate.

Method for fabricating flexible display using a shape memory alloy film

Provided is a method of manufacturing a gradually stretchable substrate. The method includes forming convex regions and concave regions on a top surface of a stretchable substrate by compressing a mold onto the stretchable substrate and forming non-stretchable patterns by filling the concave regions of the stretchable substrate. The stretchable substrate includes a stretchable region defined by the non-stretchable patterns, the non-stretchable patterns have side surfaces in contact with the stretchable region, and the side surfaces of the non-stretchable patterns are formed of protrusions and a non-protrusion between the protrusions repetitively connected to one another.

Method of manufacturing stretchable substrate and stretchable substrate manufactured using the method

A transistor includes source/drain electrodes provided on a substrate; a semiconductor oxide layer provided between the source/drain electrodes; a gate electrode facing the semiconductor oxide layer; and a gate insulating layer interposed between the semiconductor oxide layer and the gate electrode, wherein the semiconductor oxide layer has a nano-layered structure including at least one first nano layer comprised of a first material and at least one second nano layer comprised of a second material that are alternatingly stacked one on another to provide at least one interface, and wherein the first material and the second material are different materials that are effective to form an electron transfer channel layer at the interface.

Oxide transistor with nano-layered structure

Provided is a method of fabricating an electronic circuit. The method includes preparing a substrate, forming a polymer film on the substrate, patterning the polymer film to form a polymer pattern, and forming an electronic device on the polymer pattern.

Method of fabricating electronic circuit

Provided are a thin film transistor and a method for manufacturing the same. The thin film transistor manufacturing method includes forming a gate electrode on a substrate, forming an active layer that is adjacent to the gate electrode and includes an oxide semiconductor, forming an oxygen providing layer on the active layer, forming a gate dielectric between the gate electrode and the active layer, forming source and drain electrodes coupled to the active layer, forming a planarizing layer covering the gate electrode and the gate dielectric, forming a hole exposing the active layer, and performing a heat treatment process onto the planarizing layer in an atmosphere of oxygen.

Thin film transistor and method for manufacturing the same

Provided are a stretchable electronic device and a method of manufacturing the same. The manufacturing method includes forming coil interconnection on a first substrate, forming a first stretchable insulating layer that covers the coil interconnection, forming a second substrate on the first stretchable insulating layer, separating the first substrate from the coiling interconnection and the first stretchable insulating layer, and forming a transistor on the coil interconnection.

Stretchable electronic device and method of manufacturing same

Provided is a method for manufacturing a stretchable thin film transistor. The method for manufacturing a stretchable thin film transistor includes forming a mold substrate, forming a stretchable insulator on the mold substrate, forming a flat substrate on the stretchable insulator, removing the mold substrate, forming discontinuous and corrugated wires on the stretchable insulator, forming a thin film transistor connected between the wires, and removing the flat substrate.

Method for manufacturing stretchable thin film transistor

Growing community of inventors

Daejeon, South Korea

Sang Chul Lim